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SST25VF080B-50-4I-QAF备选型号: M45PE80-VMP6G

SST25VF080B-50-4I-QAF

Microchip Technology

Flash Memory 8M (1Mx8) 50MHz 2.7-3.6V Industrial

7 Weeks
表面贴装
表面贴装
8-WDFN Exposed Pad
8
Non-Volatile
-40°C~85°C TA
Tube
SST25
2005
e4
yes
活跃
3 (168 Hours)
8
EAR99
Nickel/Palladium/Gold (Ni/Pd/Au)
2.7V~3.6V
DUAL
1
3V
1.27mm
SST25VF080B
8
3.3V
3.6V
2.7V
SPI, Serial
8Mb 1M x 8
50MHz
0.03mA
50 ns
FLASH
SPI
8b
10μs
1b
8 b
0.00002A
2.7V
SPI
100000 Write/Erase Cycles
100
HARDWARE/SOFTWARE
750μm
6mm
5mm
无SVHC
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
M45PE80-VMP6G

Micron Technology Inc.

MICRON M45PE80-VMP6GFlash Memory, Low Voltage, Page Erasable, Byte Alterability, 8 MB, 1M x 8bit, 25 MHz, Serial, SPI

4 Weeks
表面贴装
表面贴装
8-VDFN Exposed Pad
8
Non-Volatile
-40°C~85°C TA
Tray
-
1998
-
yes
Obsolete
3 (168 Hours)
8
EAR99
-
2.7V~3.6V
DUAL
1
3V
1.27mm
M45PE80
8
3.3V
-
-
SPI, Serial
8Mb 1M x 8
75MHz
-
12 ns
FLASH
SPI
-
15ms, 3ms
1b
8 Mb
0.00001A
-
SPI
100000 Write/Erase Cycles
20
HARDWARE/SOFTWARE
-
6mm
-
无SVHC
无
ROHS3 Compliant
SMD/SMT
260
30
2.7V
4mA
8
Synchronous
8b
1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	M45PE80-VMP6G	Micron Technology Inc.	存储器	8-VDFN Exposed Pad	MICRON M45PE80-VMP6GFlash Memory, Low Voltage, Page Erasable, Byte Alterability, 8 MB, 1M x 8bit, 25 MHz, Serial, SPI	对比
	M25P80-VMN3PB	Micron Technology Inc.	存储器	8-SOIC (0.154, 3.90mm Width)	NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin SOIC N Tube	对比