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VNB10N07-E备选型号: VNB14NV04-E

VNB10N07-E

STMicroelectronics

IC PWR DRIVER N-CHAN 1:1 D2PAK

ACTIVE (Last Updated: 7 months ago)
18 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
400 μs
Tube
OMNIFET™, VIPower™
e3
活跃
3 (168 Hours)
2
EAR99
100mOhm
Matte Tin (Sn)
50W
SINGLE
鸥翼
1
2.54mm
VNB10
3/2
R-PSSO-G2
1
N-Channel
10A
18V
On/Off
250μA
低侧
50W
7A
不需要
250μA
Non-Inverting
100 μs
通用型
18V
10A
1:1
55V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
10V
0.9 µs
10A
100m Ω (Max)
140mOhm
6 µs
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
4.6mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
VNB14NV04-E

STMicroelectronics

IC PWR DRIVER N-CHAN 1:1 D2PAK

ACTIVE (Last Updated: 7 months ago)
18 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
450 ns
Tube
OMNIFET II™, VIPower™
e3
活跃
3 (168 Hours)
2
EAR99
35mOhm
Matte Tin (Sn) - annealed
74W
SINGLE
鸥翼
1
2.54mm
VNB14
3
R-PSSO-G2
1
N-Channel
18A
18V
On/Off
100μA
低侧
74W
12A
不需要
100μA
Non-Inverting
80 ns
通用型
-
14A
1:1
36V Max
Current Limiting (Fixed), Over Temperature, Over Voltage
42V
4.5 µs
18A
35m Ω (Max)
-
25 µs
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
-
无
ROHS3 Compliant
-40°C~150°C TJ
245
30
350ns
150 ns
4.6mm
10.4mm
9.35mm
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	VNB10N07TR-E	STMicroelectronics	PMIC - 配电开关，负载驱动器	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET OMNI N-CH 70V 10A D2PAK	对比
	VNB14NV04TR-E	STMicroelectronics	PMIC - 配电开关，负载驱动器	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET OMNIFETII 40V 12A D2PAK	对比
	VNB20N07-E	STMicroelectronics	PMIC - 配电开关，负载驱动器	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IC PWR DRIVER N-CHAN 1:1 D2PAK	对比