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W631GG6KB12I备选型号: IS43TR16640A-15GBLI

W631GG6KB12I

Winbond Electronics

DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin WBGA

表面贴装
表面贴装
96-TFBGA
96
Volatile
-40°C~95°C TC
Tray
Obsolete
3 (168 Hours)
96
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.425V~1.575V
BOTTOM
未说明
1
1.5V
0.8mm
未说明
96
不合格
1.5V
1.575V
1.425V
1Gb 64M x 16
1
280mA
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
64MX16
3-STATE
16
16b
1 Gb
0.014A
1.6GHz
COMMON
8192
8
8
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
IS43TR16640A-15GBLI

ISSI, Integrated Silicon Solution Inc

DRAM 1G, 1.5V, (64M x 16) 1300Mhz DDR3 SDRAM

-
表面贴装
96-TFBGA
96
Volatile
-40°C~95°C TC
Tray
Discontinued
3 (168 Hours)
96
EAR99
AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY
8542.32.00.32
1.425V~1.575V
BOTTOM
260
1
1.5V
0.8mm
10
96
不合格
1.5V
1.575V
1.425V
1Gb 64M x 16
1
190mA
SYNCHRONOUS
667MHz
20ns
DRAM
Parallel
64MX16
3-STATE
16
16b
1 Gb
0.015A
-
COMMON
8192
48
48
13mm
1.2mm
ROHS3 Compliant
YES
e1
Tin/Silver/Copper (Sn/Ag/Cu)
16b
15ns
2kB
无SVHC
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR16640A-125JBLI	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM 1G, 1.5V, (64M x 16) 1600Mhz DDR3 SDRAM	对比
	IS43TR16640A-15GBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM 1G, 1.5V, (64M x 16) 1300Mhz DDR3 SDRAM	对比
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