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W947D2HBJX5I备选型号: MT41K128M8DA-107:J

W947D2HBJX5I

Winbond Electronics

DRAM Chip Mobile LPDDR SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA

10 Weeks
表面贴装
表面贴装
90-TFBGA
90
Volatile
55mA
-40°C~85°C TA
Tray
2011
活跃
3 (168 Hours)
90
EAR99
AUTO/SELF REFRESH
8542.32.00.02
1.8V
BOTTOM
1
0.8mm
不合格
128Mb 4M x 32
1
SYNCHRONOUS
200MHz
5ns
DRAM
Parallel
4MX32
3-STATE
32
15ns
14b
128 Mb
0.00001A
COMMON
1.95V
1.7V
4096
24816
24816
13mm
1.025mm
ROHS3 Compliant
-
-
-
MT41K128M8DA-107:J

Micron Technology Inc.

DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin FBGA

16 Weeks
表面贴装
表面贴装
78-TFBGA
78
Volatile
-
0°C~95°C TC
Tray
2011
活跃
3 (168 Hours)
78
-
AUTO/SELF REFRESH
-
1.35V
BOTTOM
1
0.8mm
不合格
1Gb 128M x 8
1
SYNCHRONOUS
933MHz
20ns
DRAM
Parallel
128MX8
3-STATE
8
-
14b
1 Gb
-
COMMON
1.45V
1.283V
8192
8
8
10.5mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
8b
无铅
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