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W987D2HBJX7E备选型号: IS42S32400F-6BL

W987D2HBJX7E

Winbond Electronics

IC DRAM 128M PARALLEL 90VFBGA

表面贴装
表面贴装
90-TFBGA
90
Volatile
-25°C~85°C TC
Tray
2011
不用于新设计
3 (168 Hours)
90
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
不合格
1.8V
1.95V
1.7V
128Mb 4M x 32
1
70mA
SYNCHRONOUS
133MHz
5.4ns
DRAM
Parallel
4MX32
3-STATE
32
15ns
14b
4 Gb
0.00001A
COMMON
4096
1248FP
1248
13mm
1.025mm
ROHS3 Compliant
-
-
-
-
-
-
IS42S32400F-6BL

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA

表面贴装
表面贴装
90-TFBGA
90
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
-
3.3V
3.6V
3V
128Mb 4M x 32
1
150mA
-
166MHz
5.4ns
DRAM
Parallel
4MX32
3-STATE
32
-
14b
128 Mb
0.002A
COMMON
4096
1248FP
1248
13mm
1.2mm
ROHS3 Compliant
8 Weeks
EAR99
8542.32.00.02
90
32b
无
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	IS43DR16160B-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 333MHz 16Mx16 DDR2 SDRAM	对比
	IS42S32400F-7BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin WBGA	对比