N/A

-

BGA-260

YES

260

有

GS81314LQ36GK-106I

4194304 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

Tray

GS81314LQ36GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

3 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

有

GS81280E32GT-200I

Tray

GS81280E32GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

144 Mbit

SYNCHRONOUS

340 mA, 410 mA

6.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

600 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

GS81313HQ36GK-600I

4194304 words

1.2 V

Tray

GS81313HQ36GK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.1 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

625 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

GS81313HD36GK-625I

4194304 words

1.2 V

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.1 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

4194304 words

GS81313HD36GK-714

85 °C

PLASTIC/EPOXY

4000000

GRID ARRAY, HEAT SINK/SLUG

HBGA,

Details

714 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

5.75

GSI TECHNOLOGY

活跃

RECTANGULAR

HBGA

1.25 V

Tray

GS81313HD36GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.35 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

GS81313HT18GK-550I

550 MHz

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

550 MHz

Parallel

- 40 C

+ 85 C

SMD/SMT

有

10

SigmaDDR-IIIe

HBGA, BGA260,13X20,40

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

BGA260,13X20,40

-40 °C

85 °C

有

Tray

GS81313HT18GK

3A991.B.2.B

Synchronous

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

不合格

1.2 V

INDUSTRIAL

SYNCHRONOUS

8MX18

3-STATE

2.3 mm

18

150994944 bit

PARALLEL

COMMON

DDR SRAM

1.15 V

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

有

GS81314LT37GK-933

4194304 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Details

933 MHz

Parallel

1.25 V

0 C

+ 85 C

SMD/SMT

有

10

SigmaDDR-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

85 °C

GS81314LT37GK

3A991.B.2.B

SigmaDDR-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.2 A

4 M x 36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

有

GS81314LT19GK-933

8388608 words

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

10

SigmaDDR-IVe

Details

933 MHz

Serial

1.25 V

0 C

+ 85 C

SMD/SMT

有

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

85 °C

GS81314LT19GK

3A991.B.2.B

SigmaDDR-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

1.75 A

1.2 ns

8 M x 18 bit

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

100

5.36

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

1.8 V

262144 words

GS880Z32CGT-150IV

85 °C

-40 °C

NBT SRAM

66

有

SDR

SMD/SMT

+ 85 C

- 40 C

1.7 V

Parallel

150 MHz

Details

2.7 V

LQFP,

FLATPACK, LOW PROFILE

256000

UNSPECIFIED

QFP

GS880Z32CGT

3A991.B.2.B

NBT

PIPELINED ARCHITECTURE, FLOW-THROUGH, IT ALSO OPERATES WITH 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-XQFP-G100

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

130 mA, 145 mA

7.5 ns

256 k x 32

1.6 mm

32

8388608 bit

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

未说明

85 °C

有

GS81314LT18GK-106

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

1.066 GHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-IVe

有

10

SigmaDDR-IVe

Details

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

Tray

GS81314LT18GK

3A991.B.2.B

SigmaDDR-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

1.9 A

8 M x 18 bit

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT07BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

535 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

100

100

未说明

8 ns

70 °C

有

GS8640FZ36GT-8

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.6

QFP

Commercial grade

2 MWords

36 Bit

3.6 V

表面贴装

125 MHz

TQFP

SDR

3.3000 V

3 V

Synchronous

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

0 to 70 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

4

SYNCHRONOUS

Flow-Through

2MX36

1.6 mm

36

21 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

N/A

-

8 Weeks

YES

100

100

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8640FZ18GT-8I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.62

QFP

Industrial grade

125 MHz

TQFP

SDR

3.3000 V

3 V

Synchronous

4 MWords

18 Bit

3.6 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

3

4000000

-40 to 85 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

2

SYNCHRONOUS

Flow-Through

4MX18

1.6 mm

18

22 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

8 Bit

表面贴装

DDR

N

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

333 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662DT07BD-333

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

BGA

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

0 to 85 °C

Tray

GS8662DT07BD

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

630 mA

Pipelined

8 M x 8

1.4 mm

8

21 Bit

SRAM

72 Mbit

67108864 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

2

Pipelined

22 Bit

144 Mbit

Industrial

N/A

-

260

36 Bit

表面贴装

Industrial grade

725 MHz

BGA

QDR

1.3500 V

Synchronous

2 MWords

-40 to 85 °C

Pipelined

20 Bit

72 Mbit

Industrial

N/A

-

BGA-260

YES

260

8388608 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

714 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

85 °C

GS81313HQ18GK-714

Tray

GS81313HQ18GK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

1.7 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-165

YES

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS82582Q20GE-450I

450 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

450 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

INDUSTRIAL

288 Mbit

SYNCHRONOUS

1.3 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-260

YES

260

8388608 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

714 MHz

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

DDR-III

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

85 °C

GS81313HD18GK-714

Tray

GS81313HD18GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

1.7 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-165

YES

165

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS82582Q20GE-400

400 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

400 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

LBGA, BGA165,11X15,40

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

OTHER

288 Mbit

SYNCHRONOUS

1.16 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

YES

165

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS82582Q20GE-375

375 MHz

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

375 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

QDR-II

有

10

SigmaQuad-II+

1.9 V

LBGA, BGA165,11X15,40

Tray

GS82582Q20GE

3A991.B.2.B

SigmaQuad-II+ B2

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8 V

OTHER

288 Mbit

SYNCHRONOUS

1.1 A

16 M x 18

3-STATE

1.5 mm

18

301989888 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

TQFP-100

YES

100

PLASTIC/EPOXY

TQFP100,.4X.6,26

6.5 ns

85 °C

GS8128036GT-200

200 MHz

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.71

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

4000000

Tray

GS8128036GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

1

SYNCHRONOUS

330 mA, 400 mA

6.5 ns

4 M x 36

1.6 mm

36

150994944 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

TQFP-100

YES

100

TQFP100,.4X.6,26

6.5 ns

GS8128032GT-200I

200 MHz

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP, TQFP100,.4X.6,26

FLATPACK, LOW PROFILE

4000000

PLASTIC/EPOXY

Tray

GS8128032GT

3A991.B.2.B

Pipeline/Flow Through

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

144 Mbit

1

SYNCHRONOUS

350 mA, 420 mA

6.5 ns

4 M x 32

1.6 mm

32

134217728 bit

PARALLEL

CONFIGURABLE

缓存SRAM

2.3 V

2.7 V

2.3 V

YES

NO

20 mm

14 mm

N/A

-

BGA-165

165

2.7, 3.6 V

表面贴装

3.6 V

Commercial grade

Details

200 MHz

Parallel

2.3 V

0 C

+ 85 C

SMD/SMT

SDR

有

10

NBT SRAM

200 MHz

FPBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

36 Bit

0 to 85 °C

Tray

GS82564Z36GD

NBT Pipeline/Flow Through

288 Mbit

1

440 mA, 490 mA

6.5 ns

Flow-Through/Pipelined

8 M x 36

23 Bit

288 Mbit

Commercial

N/A

-

12 Weeks

BGA-165

YES

165

0.45 ns

有

GS82582DT20GE-550I

16777216 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.59

Details

550 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaQuad-II+

1.9 V

LBGA,

GRID ARRAY, LOW PROFILE

16000000

PLASTIC/EPOXY

未说明

Tray

GS82582DT20GE

3A991.B.2.B

SigmaQuad-II+

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

288 Mbit

SYNCHRONOUS

1.15 A

16 M x 18

1.5 mm

18

301989888 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm