N/A

-

BGA-260

YES

260

BGA260,13X20,40

85 °C

有

GS81313HT18GK-625

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

625 MHz

Parallel

1.2 V

0 C

+ 70 C

SMD/SMT

DDR-III

有

10

SigmaDDR-IIIe

1.35 V

HBGA, BGA260,13X20,40

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

Tray

GS81313HT18GK

3A991.B.2.B

SigmaDDR-III

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

不合格

1.2 V

OTHER

144 Mbit

SYNCHRONOUS

1.2 A

8 M x 18

3-STATE

2.3 mm

18

150994944 bit

PARALLEL

COMMON

DDR SRAM

1.15 V

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

250 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

GS8128018GT-250IV

8388608 words

1.8 V

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

144 Mbit

SYNCHRONOUS

380 mA, 450 mA

5.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

YES

100

100

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8161Z36BGT-150

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

8.38

QFP

ROHS COMPLIANT, TQFP-100

FLATPACK, LOW PROFILE

3

有

3A991.B.2.B

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

SYNCHRONOUS

512KX36

1.6 mm

36

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

GSI技术

NBT SRAM

SDR

Military grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

-55 to 125 °C

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

255 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

350 MHz

有

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

DDR

Details

SigmaCIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8662T08BGD

SigmaDDR-II B2

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 85 °C

36 Mbit

2

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

36 Mbit

Commercial

N/A

-

BGA-165

165

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

有

375 MHz

-40 to 100 °C

Tray

GS81302T36GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

950 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8182S09BGD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

2

730 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

2.3 V

36

0 C

3.6 V

+ 70 C

333 MHz

有

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

72 Mbit

1

505 mA

Pipelined

8 M x 9

22 Bit

72 Mbit

Industrial

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

21

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS8162Z72CC

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

6.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8161E32DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

260 mA, 330 mA

5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302DT07GE

SigmaQuad-II+ B4

Memory & Data Storage

144 Mbit

2

825 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

375 MHz

+ 125 C

1.9 V

- 55 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

-55 to 125 °C

Tray

GS8182Q08BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2 M x 8

SRAM

18

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R36GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

850 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

165

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Industrial grade

-40 to 100 °C

1

Pipelined

23 Bit

144 Mbit

Industrial

N/A

-

TQFP-100

100

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8161Z36DGT

NBT

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Military grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

375 MHz

+ 125 C

1.9 V

- 55 C

18

1.7 V

SMD/SMT

-55 to 125 °C

Tray

GS8182Q09BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT10BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8182D19BD-400I

400 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

- 40 C

1.9 V

+ 85 C

400 MHz

Tray

GS8182D19BD

e0

无

3A991.B.2.B

SigmaQuad II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18 Mbit

SYNCHRONOUS

615 mA

1 M x 18

3-STATE

1.4 mm

18

SRAM

0.185 A

18874368 bit

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8161Z18DD-200IV

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

-40 to 100 °C

Tray

GS8161Z18DD

3A991.B.2.B

NBT

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

SYNCHRONOUS

210 mA, 215 mA

6.5@Flow-Through/3@P

1 M x 18

1.4 mm

18

SRAM

18

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

7 ns

70 °C

有

GS8644Z36E-166V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8644Z36E

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

260 mA, 310 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS8161E18DGD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

Tray

GS8161E18DGD

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm