N/A

-

Compliant

70 °C

0 °C

2

20 b

18 Mb

无

N/A

-

12 Weeks

YES

119

119

网格排列

3

512000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS78116AGB-8I

524288 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

5.22

BGA

BGA,

e1

有

3A991.B.2.B

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

512KX16

1.99 mm

16

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

10 Weeks, 5 Days

YES

119

119

Compliant

BGA,

网格排列

3

512000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS78116AB-12I

524288 words

3.3 V

BGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

1.7

BGA

e0

无

3A991.B.2.B

锡铅

85 °C

-40 °C

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

1

ASYNCHRONOUS

512KX16

1.99 mm

16

19 b

8 Mb

8388608 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

无

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8640Z

活跃

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8640Z36GT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS8640Z36GT

有

3A991.B.2.B

NBT Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

-

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

2M x 36

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

GSI技术

SigmaQuad-II+

Details

DDR

Tray

GSI Technology Inc.

GS8182D37

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D37BGD-400I

400 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

有

400 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

-40°C ~ 85°C (TA)

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18 Mbit

SYNCHRONOUS

400 MHz

680 mA

SRAM

Parallel

512 k x 36

3-STATE

1.4 mm

36

-

SRAM

0.185 A

18874368 bit

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

512K x 36

15 mm

10 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

500 MHz

Parallel

SMD/SMT

1.7 V

0 C

1.9 V

+ 70 C

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T38BD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

BGA

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

0 to 85 °C

e0

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

945 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

36 Mbit

0.24 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 85 C

3.6 V

0 C

36

2.3 V

Tray

GS816036DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

36 Bit

1.9 V

表面贴装

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662D36BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

0 to 85 °C

GS8662D36BGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

0.735 mA

Pipelined

2MX36

3-STATE

1.4 mm

36

19 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662Q36BD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Commercial grade

250 MHz

FBGA

QDR

0 to 85 °C

Bulk

GS8662Q36BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

895 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

Tray

GS81302D38GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.54 A

4 M x 36

SRAM

SRAM

N/A

-

8 Weeks

表面贴装

119-BGA

YES

119

119-FPBGA (22x14)

119

36 Bit

2, 2.7 V

表面贴装

Tray

GS8642Z

活跃

Volatile

167 MHz

GSI Technology Inc.

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8642Z36GB-167IV

1.8 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.64

BGA

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

-40 to 85 °C

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

SRAM - Synchronous, ZBT

1.7V ~ 2V, 2.3V ~ 2.7V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72Mbit

4

SYNCHRONOUS

167 MHz

240 mA, 290 mA

8 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

-

21 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

2M x 36

22 mm

14 mm

N/A

-

44

Compliant

70 °C

0 °C

3.3 V

1

19 b

4 Mb

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D18BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

485 mA

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

Tray

GS8672T20BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.36 A

4 M x 18

SRAM

72

SRAM

N/A

-

TQFP-100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

Tray

GS816118DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA, 230 mA

5.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T38BE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.87 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

210 mA

6.5 ns

512 k x 36

SRAM

SRAM

N/A

-

TQFP-100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

Tray

GS841Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

160 mA, 190 mA

6.5 ns

128 k x 36

SRAM

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

Tray

GS8672Q20BGE

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

1.49 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

Tray

GS816218DB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM

N/A

-

TQFP-100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

Tray

GS881Z32CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

130 mA, 140 mA

7.5 ns

256 k x 32

SRAM

SRAM

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS880Z

活跃

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS880Z36CGT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.8

QFP

Industrial grade

200@Flow-Through/300@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS880Z36CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

300 MHz

185 mA, 245 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

1.6 mm

36

-

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

256K x 36

20 mm

14 mm

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

Tray

GS8182Q09BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

435 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP

5.26

GSI TECHNOLOGY

活跃

RECTANGULAR

QFP

2.5 V

GS816136DGT-200I

有

85 °C

6.5 ns

未说明

-40 °C

PLASTIC/EPOXY

512000

FLATPACK

QFP,

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS816136DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM