N/A

-

12 Weeks

uBGA-144

YES

144

144

GSI技术

TBGA,

GRID ARRAY, THIN PROFILE

8000000

PLASTIC/EPOXY

未说明

有

GS4288C36GL-33I

8388608 words

1.8 V

TBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.1

BGA

Industrial grade

300 MHz

UBGA

36 Bit

表面贴装

Compliant

有

533 MHz

+ 95 C

1.9 V

- 40 C

36

1.7 V

SMD/SMT

GSI技术

-40 to 95 °C

GS4288C36GL

3A991.B.2.B

LLDRAM

95 °C

-40 °C

自动刷新

8542.32.00.28

Memory & Data Storage

CMOS

28 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

288 Mbit

1

SYNCHRONOUS

445 mA

36 Bit

8 M x 36

1.2 mm

36

22 Bit

DRAM

288 Mbit

301989888 bit

300 MHz

Industrial

DDR DRAM

1.9 V

1.7 V

多库页面突发

DRAM

11 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302QT07GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

885 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

144

Compliant

95 °C

0 °C

1.8 V

36 b

22 b

288 Mb

533 MHz

无

N/A

-

YES

100

100

QFP

Compliant

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS816018BGT-200

200 MHz

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.28

e3

有

3A991.B.2.B

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

2

SYNCHRONOUS

0.23 mA

1MX18

3-STATE

1.6 mm

18

20 b

18 Mb

0.04 A

18874368 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

240

GSI技术

GSI技术

GS71108AGU

Memory & Data Storage

SRAM

SRAM

N/A

-

BGA-48

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

GS71116AU

Asynchronous

Memory & Data Storage

1 Mbit

85 mA

12 ns

64 k x 16

SRAM

SRAM

N/A

-

6 Weeks

BGA-48

YES

48

48

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

8 ns

70 °C

有

GS71116AGU-8

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.62

BGA

Commercial grade

FBGA

3.3000 V

Asynchronous

64 kWords

16 Bit

表面贴装

+ 70 C

3.6 V

0 C

0 to 70 °C

GS71116AGU

e1

有

3A991.B.2.B

Asynchronous

锡银铜

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1 Mbit

1

ASYNCHRONOUS

125 mA

8 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-119

48

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Commercial grade

FBGA

3.3000 V

Asynchronous

16 Bit

Compliant

+ 70 C

3.6 V

0 to 70 °C

GS74117AX

Asynchronous

70 °C

0 °C

Memory & Data Storage

3.3 V

4 Mbit

1

105 mA

10

256 k x 16

18 b

SRAM

4 Mb

4

Commercial

SRAM

无

N/A

-

6 Weeks

BGA-48

YES

48

48

活跃

GSI TECHNOLOGY

5.19

BGA

GS71116AU-8

无

70 °C

8 ns

未说明

BGA48,6X8,30

PLASTIC/EPOXY

64000

3

GRID ARRAY, THIN PROFILE, FINE PITCH

TFBGA, BGA48,6X8,30

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

65536 words

3.3 V

TFBGA

RECTANGULAR

GS71116AU

无

3A991.B.2.B

Asynchronous

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1 Mbit

ASYNCHRONOUS

125 mA

8 ns

64 k x 16

3-STATE

1.2 mm

16

SRAM

0.002 A

1048576 bit

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

8 ns

85 °C

无

GS8642Z72C-167I

167 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

Industrial grade

-40 to 85 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

280 mA, 360 mA

8 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

7 Weeks

TQFP-100

YES

100

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

128 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

128000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS840Z36CGT-150I

150 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.8

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

-40 to 100 °C

Tray

GS840Z36CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

4 Mbit

4

SYNCHRONOUS

150 mA, 160 mA

7.5 ns

Flow-Through/Pipelined

128 k x 36

3-STATE

1.6 mm

36

17 Bit

SRAM

4 Mbit

0.045 A

4718592 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

3.14 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

144 Mbit

4

350 mA, 440 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

9 b

24 b

288 Mb

533 MHz

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302Q08E

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.07 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

9 b

24 b

288 Mb

400 MHz

无

N/A

-

BGA-119

119

GSI技术

NBT SRAM

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

385 mA, 475 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q36BE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.5 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D36BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

435 mA

512 k x 36

17 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-I

DDR

Compliant

有

200 MHz

+ 70 C

2.6 V

0 C

18

2.4 V

SMD/SMT

Tray

GS8180QV18BGD

SigmaQuad

70 °C

0 °C

Memory & Data Storage

2.5 V

18 Mbit

2

1 M x 18

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342R09BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

450 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

Parallel

SDR

SyncBurst

GSI技术

GSI技术

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

-40 to 100 °C

Bulk

GS816218DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 b

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

DDR

SigmaQuad-II+

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342QT19BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

555 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342DT06BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

785 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

SigmaQuad-II

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672Q18BE-200I

200 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.49

BGA

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Bulk

GS8672Q18BE

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

870 mA

4 M x 18

3-STATE

1.5 mm

18

21 b

SRAM

72 Mb

72

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

Compliant

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

0 to 85 °C

Bulk

GS8162Z36DGD

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5@Flow-Through/3@Pip

512 k x 36

19 Bit

SRAM

18 Mb

18

Commercial

SRAM

无