N/A

-

BGA-165

165

Military grade

450 MHz

BGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Tray

GS81302D38E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-165

165

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

450 MHz

FBGA

-40 to 100 °C

144 Mbit

2

1.185 A

Pipelined

16 M x 8

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

1.8000 V

8 MWords

9 Bit

有

300 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

300 MHz

BGA

Tray

GS8662Q10BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

8 M x 9

SRAM

72

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS881Z32CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

155 mA, 195 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

SDR

Details

NBT SRAM

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS881Z18CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

130 mA, 155 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

200 MHz

FBGA

-40 to 85 °C

144 Mbit

2

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

144 Mbit

Industrial

N/A

-

6 Weeks

YES

48

48

5.22

BGA

未说明

PLASTIC/EPOXY

128000

3

GRID ARRAY, THIN PROFILE, FINE PITCH

TFBGA,

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

16 Bit

3.6 V

表面贴装

7 ns

70 °C

无

GS72116AU-7

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

0 to 70 °C

无

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 Bit

2 Mbit

2097152 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT06GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Military grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

-55 to 125 °C

Tray

GS8662DT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS81302T07E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

905 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA,

网格排列

2000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8642Z36B-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.78

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS8642Z36B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 mA, 330 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

165

300 MHz

FBGA

1.8000 V

Synchronous

8 Bit

Industrial grade

-40 to 100 °C

0.45

144

Industrial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

表面贴装

2.7, 3.6 V

有

150 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8644Z18E

NBT

85 °C

-40 °C

Memory & Data Storage

72 Mbit

2

250 mA, 310 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8644Z36GE-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 435 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.5 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

GSI Technology Inc.

3.451645 oz

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Tray

GS8642Z

活跃

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

有

GS8642Z36GB-250I

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.64

BGA

Industrial grade

-40 to 85 °C

Tray

GS8642Z36GB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

250 MHz

275 mA, 380 mA

6.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

3-STATE

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

2M x 36

22 mm

14 mm

无

N/A

-

6 Weeks

YES

44

44

3

256000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS72108AGP-8I

262144 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.76

TSOP2

0.400 INCH, TSOP2-44

SMALL OUTLINE, THIN PROFILE

有

3A991.B.2.B

Pure Matte Tin (Sn)

8542.32.00.41

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

ASYNCHRONOUS

256KX8

1.2 mm

8

2097152 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

6 Weeks

YES

119

119

网格排列

3

128000

PLASTIC/EPOXY

未说明

10 ns

70 °C

无

GS73024AB-10

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

8.58

BGA

Compliant

14 X 22 MM, 1.27 MM PITCH, FPBGA-119

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

1

ASYNCHRONOUS

128KX24

1.99 mm

24

17 b

3 Mb

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

无

N/A

-

N/A

-

6 Weeks

YES

119

119

3

128000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

无

GS73024AB-12I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.9

BGA

14 X 22 MM, 1.27 MM PITCH, FPBGA-119

网格排列

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

ASYNCHRONOUS

128KX24

1.99 mm

24

3145728 bit

PARALLEL

标准SRAM

3.6 V

3 V

22 mm

14 mm

N/A

-

6 Weeks

YES

44

44

Compliant

TSOP2,

SMALL OUTLINE, THIN PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS74104AGP-8I

1048576 words

3.3 V

TSOP2

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

TSOP2

e3

有

3A991.B.2.B

纯哑光锡

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

INDUSTRIAL

4

ASYNCHRONOUS

1MX4

1.2 mm

4

20 b

4 Mb

4194304 bit

PARALLEL

标准SRAM

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.45

BGA

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS882Z36CGD-200I

262144 words

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

256 k x 36

1.4 mm

36

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

YES

165

165

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662Q18E-200

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.67

BGA

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

4MX18

1.5 mm

18

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Bulk

GS81302DT38GE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.17 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

200 MHz

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Bulk

GS81302QT10GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

885 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

18 Bit

1.9 V

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

BGA

5.33

GSI TECHNOLOGY

不推荐

RECTANGULAR

LBGA

1.8 V

GS81302D19GE-350I

有

85 °C

Industrial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

-40 to 100 °C

Bulk

GS81302D19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

950 mA

0.45

8 M x 18

1.5 mm

18

21 b

SRAM

144 Mb

144

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无