N/A

-

TQFP-100

100

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

150 MHz

TQFP

SDR

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

Compliant

有

150 MHz

+ 70 C

2.7 V

0 to 70 °C

Tray

GS88018CGT

同步突发

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

1.9 V

-40 to 100 °C

Bulk

GS81302R18E

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

855 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

114 Mbit

2

1.4 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

Compliant

有

250 MHz

+ 85 C

3.6 V

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

175 mA, 215 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

119

119

网格排列

4000000

PLASTIC/EPOXY

-55 °C

未说明

6.5 ns

125 °C

无

GS8642Z18B-250M

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.71

BGA

Military grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

BGA,

-55 to 125 °C

Bulk

3A991.B.2.B

125 °C

-55 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

MILITARY

2

SYNCHRONOUS

Flow-Through/Pipelined

4MX18

1.99 mm

18

22 Bit

72 Mbit

75497472 bit

Military

PARALLEL

ZBT SRAM

2.7 V

2.3 V

22 mm

14 mm

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

8 MWords

8 Bit

表面贴装

有

350 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-55 °C

未说明

0.45 ns

125 °C

无

GS8662T08BD-350M

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.79

Military grade

350 MHz

FBGA

DDR

1.8000 V

Tray

GS8662T08BD

3A991.B.2.B

SigmaDDR-II B2

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

MILITARY

72 Mbit

SYNCHRONOUS

720 mA

Pipelined

8 M x 8

1.4 mm

8

23 Bit

SRAM

72 Mbit

67108864 bit

Military

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-48

48

16 Bit

3.6 V

表面贴装

Compliant

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

-40 to 125 °C

GS74116AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

90 mA

12 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

Tray

GS881Z32CGD

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

155 mA, 195 mA

5.5 ns

256 k x 32

18 b

SRAM

8 Mb

SRAM

无

N/A

-

BGA-165

Parallel

Compliant

250 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

GS881E18CGD

70 °C

0 °C

9 Mbit

2

145 mA, 180 mA

5.5 ns

512 k x 18

18 b

9 Mb

无

N/A

-

TSOP-44

GSI技术

Compliant

3.6 V

270

3 V

SMD/SMT

Parallel

GSI技术

GS71116AGP

Asynchronous

Memory & Data Storage

1 Mbit

85 mA

12 ns

64 k x 16

SRAM

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

Tray

GS881Z32CD

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

140 mA, 170 mA

6.5 ns

256 k x 32

18 b

SRAM

8 Mb

SRAM

无

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

72

Tray

GS881Z18CGD

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

145 mA, 180 mA

5.5 ns

512 k x 18

18 b

SRAM

9 Mb

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

Tray

GS881E36CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

175 mA, 215 mA

5.5 ns

256 k x 36

18 b

SRAM

9 Mb

SRAM

无

N/A

-

BGA-165

10

- 40 C

1.9 V

1.8000 V

Synchronous

SigmaQuad-II+

Industrial grade

450 MHz

QDR

1.7 V

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

QDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Tray

GS81302D20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.27 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

Tray

GS81302D38GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.4 A

4 M x 36

SRAM

SRAM

N/A

-

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302D20GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302Q10GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.07 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

表面贴装

675 MHz

+ 85 C

1.4 V

0 C

1.3 V

SMD/SMT

Parallel

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

85 °C

有

GS8673ET36BGK-675

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.74

Commercial grade

675 MHz

BGA

DDR

1.3500 V

1.3 V

Synchronous

2 MWords

36 Bit

1.4 V

0 to 70 °C

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

4

SYNCHRONOUS

2.38 A

Pipelined

2 M x 36

2.3 mm

36

20 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

N/A

-

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

350 MHz

FBGA

QDR

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS881E32CGD-200I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

-40 to 85 °C

Tray

GS881E32CGD

e1

有

3A991.B.2.B

DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

160 mA, 190 mA

6.5 ns

Flow-Through/Pipelined

256 k x 32

1.4 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8128418B-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

200 MHz

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS8128418B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

8 M x 18

1.99 mm

18

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm