N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

114 Mbit

2

1.4 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

Compliant

有

250 MHz

+ 85 C

-40 to 85 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

175 mA, 215 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

YES

119

119

BGA,

网格排列

4000000

PLASTIC/EPOXY

-55 °C

未说明

6.5 ns

125 °C

无

GS8642Z18B-250M

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.71

BGA

Military grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

-55 to 125 °C

Bulk

3A991.B.2.B

125 °C

-55 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

MILITARY

2

SYNCHRONOUS

Flow-Through/Pipelined

4MX18

1.99 mm

18

22 Bit

72 Mbit

75497472 bit

Military

PARALLEL

ZBT SRAM

2.7 V

2.3 V

22 mm

14 mm

无

N/A

-

TQFP-100

100

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

150 MHz

TQFP

SDR

表面贴装

2, 2.7 V

18 Bit

512 kWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

Compliant

有

150 MHz

+ 70 C

0 to 70 °C

Tray

GS88018CGT

同步突发

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-48

48

256 kWords

16 Bit

3.6 V

表面贴装

Compliant

3.6 V

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

FBGA

3.3000 V

3 V

Asynchronous

-40 to 125 °C

GS74116AGX

Asynchronous

Memory & Data Storage

4 Mbit

1

90 mA

12 ns

256 k x 16

18 Bit

SRAM

4 Mbit

扩展工业

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Military grade

300 MHz

BGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

300 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

Tray

GS81302Q08E

SigmaQuad-II

Memory & Data Storage

144 Mbit

Pipelined

16 M x 8

24 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

4 MWords

18 Bit

表面贴装

有

675 MHz

+ 85 C

1.4 V

0 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

DDR

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8673ED18BGK-675

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Commercial grade

675/450 MHz

BGA

QDR

1.3500 V

Synchronous

0 to 70 °C

Tray

GS8673ED18BGK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

2.26 A

1.35 Gb/s

Pipelined

4 M x 18

2.3 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

165

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

350 MHz

FBGA

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS81302Q10GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.07 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

144 Mbit

2

1.66 A

Pipelined

4 M x 36

20 Bit

144 Mbit

Commercial

N/A

-

12 Weeks

BGA-119

YES

119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

8 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8128418B-200IV

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

200 MHz

SDR

-40 to 85 °C

Tray

GS8128418B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

8 M x 18

1.99 mm

18

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

TQFP-100

100

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS880Z36CGT

NBT

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

110 mA, 125 mA

7.5@Flow-Through/3.8

256 k x 36

18 b

SRAM

9 Mb

9

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

表面贴装

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302TT20E-400I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

-40 to 100 °C

Bulk

GS81302TT20E

无

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

905 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 to 85 °C

Tray

GS81302Q37GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.33 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

TQFP-100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

Tray

GS881E32CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

175 mA, 215 mA

5.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

72

Tray

GS881Z18CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

145 mA, 180 mA

5.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-119

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

84

2.3 V

SMD/SMT

Tray

GS842Z18CB

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

165 mA, 200 mA

5.5 ns

256 k x 18

SRAM

SRAM

N/A

-

BGA-165

SMD/SMT

1.7 V

10

0 C

1.9 V

+ 70 C

500 MHz

有

QDR-II

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

Tray

GS81302D20GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.36 A

8 M x 18

SRAM

144

SRAM

N/A

-

Compliant

70 °C

0 °C

4

18 b

9 Mb

无

N/A

-

165

Compliant

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

2

Pipelined

20 Bit

144 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Bulk

GS81302T19GE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

1

1 A

Pipelined

8 M x 18

22 b

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 85 C

-40 to 100 °C

Bulk

GS81302T08E

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

855 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-260

YES

260

260

4 MWords

Synchronous

1.3 V

1.3500 V

DDR

BGA

625/400 MHz

Compliant

有

625 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-IIIe

DDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673ET18BGK-625I

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Industrial grade

表面贴装

1.4 V

18 Bit

-40 to 85 °C

Tray

GS8673ET18BGK

3A991.B.2.B

SigmaDDR-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

1.65 A

Pipelined

4 M x 18

2.3 mm

18

SRAM

72 Mbit

72

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR-II

Compliant

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS81302S18E

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302Q07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.07 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM