品牌是'GSI' (10000)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 建筑学 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 产品类别 | 长度 | 宽度 | 辐射硬化 | |||||||||||||||||||||||||||||||||||||||||||||
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![]() | GS88018CGT-200V | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | TQFP-100 | YES | 100 | 100 | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 512 kWords | 18 Bit | 2, 2.7 V | 表面贴装 | 有 | 200 MHz | + 70 C | 2.7 V | 0 C | 66 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | LQFP, | FLATPACK, LOW PROFILE | 3 | 512000 | PLASTIC/EPOXY | 未说明 | 6.5 ns | 70 °C | 有 | GS88018CGT-200V | 1.8 V | LQFP | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.3 | QFP | Commercial grade | 200 MHz | TQFP | SDR | 0 to 70 °C | Tray | GS88018CGT | e3 | 有 | 3A991.B.2.B | 同步突发 | Matte Tin (Sn) | 70 °C | 0 °C | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.65 mm | compliant | R-PQFP-G100 | 不合格 | COMMERCIAL | 9 Mbit | 2 | SYNCHRONOUS | 115 mA, 140 mA | 6.5 ns | Flow-Through/Pipelined | 512 k x 18 | 1.6 mm | 18 | 19 Bit | SRAM | 9 Mbit | 9437184 bit | Commercial | PARALLEL | 缓存SRAM | 2 V | 1.7 V | SRAM | 20 mm | 14 mm | 无 | |||||||||||
![]() | GS81302T19E-450I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR-II | Industrial grade | 450 MHz | 表面贴装 | 1.9 V | 18 Bit | 8 MWords | Synchronous | 1.7 V | 1.8000 V | DDR | FBGA | 有 | 450 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS81302T19E | SigmaDDR-II+ B2 | Memory & Data Storage | 144 Mbit | 1 | 1.01 A | Pipelined | 8 M x 18 | 22 Bit | SRAM | 144 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D11E-500I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | YES | 165 | 165 | GSI技术 | SigmaQuad-II+ | LBGA, | GRID ARRAY, LOW PROFILE | 16000000 | PLASTIC/EPOXY | 未说明 | 0.37 ns | 无 | GS81302D11E-500I | 1.8 V | LBGA | RECTANGULAR | 不推荐 | GSI TECHNOLOGY | 5.62 | BGA | Industrial grade | 500 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 9 Bit | 1.9 V | 表面贴装 | 有 | 10 | GSI技术 | -40 to 100 °C | Tray | GS81302D11E | 3A991.B.2.B | 流水线结构 | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 2 | SYNCHRONOUS | Pipelined | 16MX9 | 1.5 mm | 9 | 22 Bit | SRAM | 144 Mbit | 150994944 bit | Industrial | PARALLEL | DDR SRAM | 1.9 V | 1.7 V | SRAM | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||
![]() | GS8182R08BD-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | YES | 165 | 165 | 无 | GS8182R08BD-250 | 2097152 words | 1.8 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.18 | BGA | LBGA, | GRID ARRAY, LOW PROFILE | 2000000 | PLASTIC/EPOXY | 未说明 | 0.45 ns | 70 °C | e0 | 无 | 3A991.B.2.B | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | not_compliant | R-PBGA-B165 | 不合格 | COMMERCIAL | SYNCHRONOUS | 2MX8 | 1.4 mm | 8 | 16777216 bit | PARALLEL | DDR SRAM | 1.9 V | 1.7 V | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS74116AX-12E | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-48 | 48 | 表面贴装 | 3.6 V | 135 | 3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | N | FBGA | 3.3000 V | 3 V | Asynchronous | 256 kWords | 16 Bit | 3.6 V | -40 to 125 °C | GS74116AX | Asynchronous | Memory & Data Storage | 4 Mbit | 1 | 90 mA | 12 ns | 256 k x 16 | 18 Bit | SRAM | 4 Mbit | 扩展工业 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302TT07GE-400I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | Details | DDR-II | Industrial grade | 400 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 400 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | -40 to 100 °C | Tray | GS81302TT07GE | SigmaDDR-II+ B2 | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 1 | 905 mA | Pipelined | 16 M x 8 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D38BD-450M | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 表面贴装 | 有 | 450 MHz | + 125 C | 1.9 V | - 55 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | DDR | LBGA, | GRID ARRAY, LOW PROFILE | 2000000 | PLASTIC/EPOXY | -55 °C | 未说明 | 0.45 ns | 125 °C | 无 | GS8662D38BD-450M | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.76 | Military grade | 450 MHz | FBGA | QDR | 1.8000 V | Synchronous | 2 MWords | 36 Bit | Tray | GS8662D38BD | 3A991.B.2.B | SigmaQuad-II+ | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | MILITARY | 72 Mbit | SYNCHRONOUS | Pipelined | 2 M x 36 | 1.4 mm | 36 | 21 Bit | SRAM | 72 Mbit | 75497472 bit | Military | PARALLEL | QDR SRAM | 1.9 V | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||
![]() | GS81302Q10GE-300I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | QDR-II | Industrial grade | 300 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 表面贴装 | 1.9 V | 9 Bit | 16 MWords | 有 | 300 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | -40 to 100 °C | Tray | GS81302Q10GE | SigmaQuad-II+ B2 | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 2 | 1.26 A | Pipelined | 16 M x 9 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182T09BD-167 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Compliant | 70 °C | 0 °C | 1.8 V | 1 | 20 b | 18 Mb | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302S18E-350I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaSIO DDR-II | DDR-II | Compliant | Industrial grade | 350 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 350 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | -40 to 100 °C | Tray | GS81302S18E | SigmaSIO DDR-II | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 2 | 950 mA | Pipelined | 8 M x 18 | 22 Bit | SRAM | 144 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8673EQ36BGK-725IS | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-260 | Parallel | GSI技术 | GSI技术 | SigmaQuad-IIIe | QDR-III | Compliant | 有 | 725 MHz | + 100 C | 1.4 V | - 40 C | 8 | 1.3 V | SMD/SMT | Tray | GS8673EQ36BGK | SigmaQuad-IIIe B2 | 85 °C | -40 °C | Memory & Data Storage | 1.35 V | 72 Mbit | 3.33 A | 2 M x 36 | 20 b | SRAM | 72 Mb | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302S08E-350I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaSIO DDR-II | DDR-II | Industrial grade | 表面贴装 | 1.9 V | 8 Bit | 16 MWords | Synchronous | 1.7 V | 1.8000 V | DDR | FBGA | 350 MHz | Compliant | 有 | 350 MHz | + 85 C | 1.9 V | - 40 C | 10 | -40 to 100 °C | Bulk | GS81302S08E | SigmaSIO DDR-II | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 2 | 950 mA | Pipelined | 16 M x 8 | 23 Bit | SRAM | 144 Mb | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302T19GE-450 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | GSI技术 | SigmaDDR-II+ | DDR-II | Commercial grade | 450 MHz | FBGA | DDR | 1.8000 V | Synchronous | 8 MWords | 18 Bit | 表面贴装 | Compliant | 有 | 450 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | 0 to 85 °C | Bulk | GS81302T19GE | SigmaDDR-II+ B2 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 1 | 1 A | Pipelined | 8 M x 18 | 22 b | SRAM | 144 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302DT38GE-500 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | 500 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 36 Bit | 1.9 V | 表面贴装 | Compliant | Commercial grade | 0 to 85 °C | Bulk | 85 °C | 0 °C | 1.8 V | 2 | Pipelined | 20 Bit | 144 Mbit | Commercial | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8322Z18AB-375M | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-119 | YES | 119 | 119 | 2.3, 3 V | Synchronous | 2 MWords | 18 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 375 MHz | + 125 C | 3.6 V | - 55 C | 14 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | SDR | BGA, BGA119,7X17,50 | 网格排列 | 2000000 | PLASTIC/EPOXY | BGA119,7X17,50 | -55 °C | 4.2 ns | 125 °C | 无 | GS8322Z18AB-375M | 375 MHz | 2.5 V | BGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.55 | Military grade | 238@Flow-Through/375@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | -55 to 125 °C | Tray | GS8322Z18AB | 3A991.B.2.B | NBT Pipeline/Flow Through | ALSO OPERATES AT 3.3 V SUPPLY; PIPELINE MODE | Memory & Data Storage | CMOS | BOTTOM | BALL | 1 | 1.27 mm | compliant | R-PBGA-B119 | 不合格 | 2.5/3.3 V | MILITARY | 36 Mbit | 2 | SYNCHRONOUS | 270 mA, 360 mA | 4.2 ns | Flow-Through/Pipelined | 2 M x 18 | 3-STATE | 1.99 mm | 18 | 21 Bit | SRAM | 36 Mbit | 0.09 A | 37748736 bit | Military | PARALLEL | COMMON | ZBT SRAM | 2.3 V | 2.7 V | 2.3 V | SRAM | 22 mm | 14 mm | |||||||||||||||
![]() | GS81302TT37GE-400I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | Details | DDR-II | Industrial grade | 400 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 400 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | -40 to 100 °C | Tray | GS81302TT37GE | SigmaDDR-II+ B2 | Memory & Data Storage | 144 Mbit | 1 | 1.005 A | Pipelined | 4 M x 36 | 21 Bit | SRAM | 144 Mbit | Industrial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302Q37E-318 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | N | QDR-II | Commercial grade | 318 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 318 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | 0 to 85 °C | Tray | GS81302Q37E | SigmaQuad-II+ B2 | Memory & Data Storage | 144 Mbit | 2 | 1.44 A | Pipelined | 4 M x 36 | 21 Bit | SRAM | 144 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS881E36CD-200I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 2.3, 3 V | Synchronous | 256 kWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 200 MHz | + 85 C | 3.6 V | - 40 C | 72 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | LBGA, | GRID ARRAY, LOW PROFILE | 256000 | PLASTIC/EPOXY | -40 °C | 未说明 | 6.5 ns | 85 °C | 无 | GS881E36CD-200I | 2.5 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.15 | BGA | Industrial grade | 153.8@Flow-Through/200@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | -40 to 85 °C | Tray | GS881E36CD | e0 | 无 | 3A991.B.2.B | DCD Pipeline/Flow Through | Tin/Lead (Sn/Pb) | PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | not_compliant | R-PBGA-B165 | 不合格 | INDUSTRIAL | 9 Mbit | 4 | SYNCHRONOUS | 160 mA, 190 mA | 6.5 ns | Flow-Through/Pipelined | 256 k x 36 | 1.4 mm | 36 | 18 Bit | SRAM | 9 Mbit | 9437184 bit | Industrial | PARALLEL | 缓存SRAM | 2.7 V | 2.3 V | SRAM | 15 mm | 13 mm | |||||||||||||||
![]() | GS81302D20GE-500 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 0 C | 1.9 V | + 70 C | 500 MHz | 有 | QDR-II | Details | SigmaQuad-II+ | GSI技术 | GSI技术 | Parallel | SMD/SMT | 1.7 V | 10 | Tray | GS81302D20GE | SigmaQuad-II+ | Memory & Data Storage | 144 Mbit | 1.36 A | 8 M x 18 | SRAM | 144 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS881E36CGD-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Compliant | 70 °C | 0 °C | 4 | 18 b | 9 Mb | 无 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS881E32CGT-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP-100 | GSI技术 | GSI技术 | SyncBurst | Details | SDR | 有 | 250 MHz | + 85 C | 3.6 V | - 40 C | 72 | 2.3 V | SMD/SMT | Parallel | Tray | GS881E32CGT | DCD Pipeline/Flow Through | Memory & Data Storage | 9 Mbit | 175 mA, 215 mA | 5.5 ns | 256 k x 32 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8182D37BGD-400 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | GSI技术 | GSI技术 | SigmaQuad-II+ | Details | DDR | 有 | 400 MHz | + 70 C | 1.9 V | 0 C | 18 | 1.7 V | SMD/SMT | Parallel | Tray | GS8182D37BGD | SigmaQuad II+ | Memory & Data Storage | 18 Mbit | 670 mA | 500 ps | 512 k x 36 | SRAM | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8160Z18BGT-200 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 100 | 1000000 | PLASTIC/EPOXY | 未说明 | 6.5 ns | 70 °C | 有 | GS8160Z18BGT-200 | 1048576 words | 2.5 V | LQFP | RECTANGULAR | GSI技术 | Obsolete | GSI TECHNOLOGY | 5.66 | QFP | LQFP, | FLATPACK, LOW PROFILE | 3 | e3 | 有 | 3A991.B.2.B | 纯哑光锡 | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 8542.32.00.41 | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.65 mm | compliant | R-PQFP-G100 | 不合格 | COMMERCIAL | SYNCHRONOUS | 1MX18 | 1.6 mm | 18 | 18874368 bit | PARALLEL | ZBT SRAM | 2.75 V | 2.25 V | 20 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8673ED36BGK-625S | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-260 | YES | 260 | 网格排列 | 2000000 | PLASTIC/EPOXY | 85 °C | 有 | GS8673ED36BGK-625S | 2097152 words | 1.35 V | BGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.73 | Compliant | 有 | 625 MHz | + 85 C | 1.4 V | 0 C | 8 | 1.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-IIIe | DDR | BGA, | Tray | GS8673ED36BGK | 3A991.B.2.B | SigmaQuad-IIIe B4 | 70 °C | 0 °C | 8542.32.00.41 | Memory & Data Storage | CMOS | 1.35 V | BOTTOM | BALL | 1 | 1 mm | compliant | R-PBGA-B260 | OTHER | 72 Mbit | SYNCHRONOUS | 2.97 A | 2 M x 36 | 2.3 mm | 36 | 19 b | SRAM | 72 Mb | 75497472 bit | PARALLEL | DDR SRAM | 1.4 V | 1.3 V | SRAM | 22 mm | 14 mm | 无 | |||||||||||||||||||||||||||||||||||||
![]() | GS8342Q36AE-167 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 |
GS88018CGT-200V
GSI Technology
分类:Memory
GS81302T19E-450I
GSI Technology
分类:Memory
GS81302D11E-500I
GSI Technology
分类:Memory
GS8182R08BD-250
GSI Technology
分类:Memory
GS74116AX-12E
GSI Technology
分类:Memory
GS81302TT07GE-400I
GSI Technology
分类:Memory
GS8662D38BD-450M
GSI Technology
分类:Memory
GS81302Q10GE-300I
GSI Technology
分类:Memory
GS8182T09BD-167
GSI Technology
分类:Memory
GS81302S18E-350I
GSI Technology
分类:Memory
GS8673EQ36BGK-725IS
GSI Technology
分类:Memory
GS81302S08E-350I
GSI Technology
分类:Memory
GS81302T19GE-450
GSI Technology
分类:Memory
GS81302DT38GE-500
GSI Technology
分类:Memory
GS8322Z18AB-375M
GSI Technology
分类:Memory
GS81302TT37GE-400I
GSI Technology
分类:Memory
GS81302Q37E-318
GSI Technology
分类:Memory
GS881E36CD-200I
GSI Technology
分类:Memory
GS81302D20GE-500
GSI Technology
分类:Memory
GS881E36CGD-250
GSI Technology
分类:Memory
GS881E32CGT-250I
GSI Technology
分类:Memory
GS8182D37BGD-400
GSI Technology
分类:Memory
GS8160Z18BGT-200
GSI Technology
分类:Memory
GS8673ED36BGK-625S
GSI Technology
分类:Memory
GS8342Q36AE-167
GSI Technology
分类:Memory
