N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

14

0 to 85 °C

Tray

GS8322Z36AGB

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Commercial grade

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

0 to 70 °C

Tray

GS8182D08BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

680 mA

0.45

2 M x 8

19 Bit

SRAM

18

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

表面贴装

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8161Z18DGT-250V

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

0 to 85 °C

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D20BD-450

450 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

450 MHz

FBGA

0 to 85 °C

Tray

GS8342D20BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.24 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182D08BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

680 mA

Pipelined

2 M x 8

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

未说明

4 ns

85 °C

有

GS8162Z18DGB-400

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

OTHER

18 Mbit

2

SYNCHRONOUS

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342Q18BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

895 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

未说明

4.2 ns

85 °C

无

GS8162Z18DB-375

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8162Z18DB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

OTHER

18 Mbit

2

SYNCHRONOUS

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

1.99 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8342T11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS816218DD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Tray

GS816218DD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8672Q37BE-400I

400 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

400 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

QDR-II

有

15

SigmaQuad-II+

1.9 V

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

Tray

GS8672Q37BE

3A991.B.2.B

SigmaQuad-II+

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

1.88 A

2 M x 36

3-STATE

1.5 mm

36

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

460 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

YES

119

70 °C

无

GS84036CB-250

131072 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

250 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

84

SyncBurst

3.6 V

BGA,

网格排列

128000

PLASTIC/EPOXY

未说明

Tray

GS84036CB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

COMMERCIAL

4 Mbit

SYNCHRONOUS

155 mA, 195 mA

6.5 ns

128 k x 36

1.99 mm

36

4718592 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

72 Mbit

1.09 A

4 M x 18

72

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672T18BGE

SigmaDDR-II

Memory & Data Storage

72 Mbit

910 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

18 Mbit

485 mA

2 M x 9

N/A

-

BGA-119

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

18 Mbit

230 mA, 250 mA

5.5 ns

1 M x 18

N/A

-

BGA-165

GSI技术

SigmaSIO DDR-II

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8182S18BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

495 mA

1 M x 18

SRAM

SRAM

N/A

-

BGA-119

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

GS8162Z18DB

18 Mbit

215 mA

6.5 ns

1 M x 18

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

375 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T37BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.37 A

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Tray

GS880E32CGT

DCD

Memory & Data Storage

9 Mbit

150 mA, 160 mA

7.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Tray

GS8182D08BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

495 mA

2 M x 8

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T18BE

SigmaDDR-II

Memory & Data Storage

72 Mbit

890 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

SigmaDDR-II+

DDR-II

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8672T38BE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.45 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672D36BGE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.86 A

2 M x 36

SRAM

72

SRAM