N/A

-

6 Weeks

YES

119

119

Compliant

14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

网格排列

3

128000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS73024AGB-8I

131072 words

3.3 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX24

1.99 mm

24

17 b

3 Mb

3145728 bit

PARALLEL

标准SRAM

3.6 V

3.135 V

22 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8640Z36GT-250

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

QFP

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

0 to 70 °C

Tray

GS8640Z36GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

255 mA, 360 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

6 Weeks

YES

48

48

未说明

7 ns

70 °C

有

GS72116AGU-7

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

16 Bit

3.6 V

表面贴装

Compliant

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

0 to 70 °C

e1

有

3A991.B.2.B

锡银铜

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 Bit

2 Mbit

2097152 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

无

N/A

-

YES

144

144

未说明

无

GS4288C18L-33I

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.68

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS81302R36E

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

895 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-119

YES

119

119

3.6 V

表面贴装

Compliant

+ 70 C

3.6 V

0 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS78132AB-8

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

32 Bit

0 to 70 °C

GS78132AB

e0

无

3A991.B.2.B

Asynchronous

锡铅

70 °C

0 °C

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

8 Mbit

4

ASYNCHRONOUS

260 mA

8 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302T09E

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

755 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302D18GE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

710 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mb

Industrial

SRAM

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302D09GE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

815 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mb

Commercial

SRAM

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Compliant

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302T08E

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

700 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

-40 to 100 °C

Tray

GS81302Q08GE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.07 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

318 MHz

Compliant

有

318 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS81302QT10E

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.265 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS81302D18GE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

995 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302D36GE-333I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

-40 to 100 °C

Tray

GS81302D36GE

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.01 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302R36GE

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

670 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 to 85 °C

Tray

GS81302R09GE

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

595 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Bulk

GS81302DT06E

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

YES

165

165

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302T36E-250I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

BGA

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

-40 to 100 °C

GS81302T36E

无

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

680 mA

Pipelined

4MX36

1.5 mm

36

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

BGA-165

165

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 to 85 °C

Bulk

GS81302DT11E

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.055 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

144

Compliant

95 °C

-40 °C

1.8 V

18 b

23 b

288 Mb

400 MHz

无

N/A

-

10 Weeks

BGA-119

YES

119

119

32 Bit

3.6 V

表面贴装

+ 85 C

3.6 V

- 40 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

10 ns

85 °C

有

GS78132AGB-10I

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

-40 to 85 °C

GS78132AGB

e1

有

3A991.B.2.B

Asynchronous

锡银铜

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

8 Mbit

4

ASYNCHRONOUS

230 mA

10 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Tray

GS81302D36GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

6 Weeks

YES

48

48

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

无

GS71108AU-7I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

8 Bit

3.6 V

表面贴装

240

GSI技术

GSI技术

TFBGA,

-40 to 85 °C

GS71108AGU

无

3A991.B.2.B

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX8

1.2 mm

8

17 Bit

SRAM

1 Mbit

1048576 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-165

165

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Tray

GS81302QT37GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.45 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

0 to 85 °C

144 Mbit

2

800 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Commercial