N/A

-

BGA-165

165

250 MHz

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

0 to 85 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

595 mA

0.45

8 M x 18

SRAM

144

SRAM

N/A

-

BGA-119

119

200 MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

0 to 70 °C

Tray

GS81284Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

350 mA, 440 mA

7.5@Flow-Through/3@P

4 M x 36

SRAM

144

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R08GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

595 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302QT07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.275 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

DDR-II

N

SigmaDDR-II

GSI技术

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R08E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

690 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

200 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

200 MHz

FBGA

QDR

-40 to 100 °C

144 Mbit

2

885 mA

Pipelined

8 M x 18

22 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

N

DDR-II

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

0 to 85 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

845 mA

0.45

8 M x 18

SRAM

144

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302QT10GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.26 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R09GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

800 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

755 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

165

Synchronous

1.7 V

1.8000 V

QDR

FBGA

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

250 MHz

表面贴装

1.9 V

8 Bit

16 MWords

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302D08GE-350

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Commercial grade

350 MHz

FBGA

QDR

0 to 85 °C

Tray

GS81302D08GE

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

940 mA

Pipelined

16 M x 8

1.5 mm

8

22 Bit

SRAM

144 Mbit

134217728 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

755 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302QT07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302QT19GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

YES

119

119

2.7, 3.6 V

表面贴装

167 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

3

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8128418GB-167

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

6 Weeks

BGA-48

YES

48

48

64000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

8 ns

85 °C

无

GS71116AU-8I

65536 words

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

+ 85 C

3.6 V

- 40 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

GS71116AU

无

3A991.B.2.B

Asynchronous

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

1 Mbit

ASYNCHRONOUS

130 mA

8 ns

64 k x 16

3-STATE

1.2 mm

16

SRAM

0.005 A

1048576 bit

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-165

165

375 MHz

FBGA

1.8000 V

1.7 V

9 Bit

1.9 V

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

0 to 85 °C

Tray

GS81302T09GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

845 mA

0.45

16 M x 9

SRAM

144

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS8644Z18E

NBT

Memory & Data Storage

72 Mbit

2

225 mA, 275 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

165

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

20 Bit

144 Mbit

Commercial

N/A

-

BGA-165

YES

165

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

2.042671 oz

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302T18GE-333I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

8.03

BGA

Industrial grade

-40 to 100 °C

Tray

GS81302T18GE

e1

有

3A991.B.2.B

SigmaDDR-II B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

765 mA

Pipelined

8 M x 18

1.5 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D09E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

GS81302T08GE

144 Mbit

2

700 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Industrial

N/A

-

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D09E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM