N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302R36E

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

895 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302D18GE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

995 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

YES

165

165

36 Bit

1.9 V

表面贴装

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302T36E-250I

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.33

BGA

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

-40 to 100 °C

GS81302T36E

无

3A991.B.2.B

100 °C

-40 °C

流水线结构

8542.32.00.41

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

680 mA

Pipelined

4MX36

1.5 mm

36

22 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R09GE

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

595 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Bulk

GS81302DT06E

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302Q08GE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.07 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302DT11E

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.055 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

表面贴装

1.9 V

9 Bit

16 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

318 MHz

Compliant

有

318 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Bulk

GS81302QT10E

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.265 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-119

YES

119

119

Compliant

+ 70 C

3.6 V

0 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS78132AB-8

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

32 Bit

3.6 V

表面贴装

0 to 70 °C

GS78132AB

e0

无

3A991.B.2.B

Asynchronous

锡铅

70 °C

0 °C

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

8 Mbit

4

ASYNCHRONOUS

260 mA

8 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

无

N/A

-

6 Weeks

YES

48

48

70 °C

有

GS72116AGU-7

3.3 V

TFBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.22

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

16 Bit

3.6 V

表面贴装

Compliant

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

未说明

7 ns

0 to 70 °C

e1

有

3A991.B.2.B

锡银铜

70 °C

0 °C

8542.32.00.41

CMOS

3.3 V

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

COMMERCIAL

1

ASYNCHRONOUS

128KX16

1.2 mm

16

17 Bit

2 Mbit

2097152 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

8 mm

6 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

15

2.3 V

0 to 70 °C

Tray

GS8644Z18E

NBT

Memory & Data Storage

72 Mbit

2

225 mA, 275 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

165

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

20 Bit

144 Mbit

Commercial

N/A

-

6 Weeks

BGA-48

YES

48

48

表面贴装

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

7 ns

70 °C

有

GS71116AGU-7

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

0 to 70 °C

GS71116AGU

e1

有

3A991.B.2.B

Asynchronous

锡银铜

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1 Mbit

1

ASYNCHRONOUS

145 mA

7 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-165

YES

165

165

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

2.042671 oz

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302T18GE-333I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

8.03

BGA

Industrial grade

-40 to 100 °C

Tray

GS81302T18GE

e1

有

3A991.B.2.B

SigmaDDR-II B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

765 mA

Pipelined

8 M x 18

1.5 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D09E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

6 Weeks

BGA-48

YES

48

48

表面贴装

+ 70 C

3.6 V

0 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

7 ns

70 °C

无

GS71116AU-7

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

0 to 70 °C

GS71116AU

无

3A991.B.2.B

Asynchronous

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

1 Mbit

1

ASYNCHRONOUS

145 mA

7 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.002 A

1048576 bit

Commercial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

165

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D09E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

6 Weeks

BGA-48

YES

48

48

256000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

12 ns

85 °C

有

GS74116AGX-12I

262144 words

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.2

BGA

+ 85 C

3.6 V

- 40 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

GS74116AGX

e1

有

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

4 Mbit

ASYNCHRONOUS

100 mA

12 ns

256 k x 16

3-STATE

1.2 mm

16

SRAM

0.02 A

4194304 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

10 mm

6 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302R08GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

595 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302QT07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.275 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

350 mA, 440 mA

7.5 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-48

48

256 kWords

16 Bit

表面贴装

+ 70 C

3.6 V

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

Commercial grade

FBGA

3.3000 V

Asynchronous

0 to 70 °C

GS74116AX

Asynchronous

Memory & Data Storage

4 Mbit

1

130 mA

8 ns

256 k x 16

18 Bit

SRAM

4 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

755 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

250 MHz

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

144 Mbit

605 mA

0.45

16 M x 9

144

N/A

-

BGA-48

48

+ 85 C

3.6 V

- 40 C

3 V

SMD/SMT

N

SDR

TFBGA, BGA48,6X8,30

无

活跃

BGA

Industrial grade

3.6 V

240

Parallel

GSI技术

GSI技术

GS71116AU-7I

GSI TECHNOLOGY

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

表面贴装

有

-40 to 85 °C

GS71116AU

无

3A991.B.2.B

Asynchronous

8542.32.00.41

Memory & Data Storage

compliant

1 Mbit

1

150 mA

7 ns

64 k x 16

16 Bit

SRAM

1 Mbit

Industrial

SRAM