N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302QT37E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.14 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Commercial grade

250 MHz

FBGA

1.8000 V

Synchronous

36 Bit

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

0 to 85 °C

144 Mbit

1.13 A

0.45

4 M x 36

144

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302T18GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

690 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

6 Weeks

BGA-119

YES

48

48

16 Bit

3.6 V

表面贴装

+ 85 C

3.6 V

- 40 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

256000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

10 ns

85 °C

有

GS74117AGX-10I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

-40 to 85 °C

GS74117AGX

e1

有

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

4 Mbit

1

ASYNCHRONOUS

115 mA

10 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.02 A

4194304 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

10 mm

6 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302DT11E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

21

0 to 70 °C

Tray

GS8162Z72CGC

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

230 mA, 290 mA

6.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

6 Weeks

YES

48

48

3

128000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

无

GS71108AU-7I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

128 kWords

8 Bit

3.6 V

表面贴装

240

GSI技术

GSI技术

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

-40 to 85 °C

GS71108AGU

无

3A991.B.2.B

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

0.75 mm

compliant

R-PBGA-B48

不合格

INDUSTRIAL

1

ASYNCHRONOUS

128KX8

1.2 mm

8

17 Bit

SRAM

1 Mbit

1048576 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

8 mm

6 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Tray

GS81302QT37GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.45 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

0 to 85 °C

144 Mbit

2

800 mA

Pipelined

16 M x 8

23 Bit

144 Mbit

Commercial

N/A

-

165

16 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

250 MHz

表面贴装

1.9 V

8 Bit

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302QT19GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-119

YES

119

119

18 Bit

2.7, 3.6 V

表面贴装

167 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

3

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8128418GB-167

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

0 to 70 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302R18GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

755 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302QT07E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.25 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

375 MHz

FBGA

1.8000 V

1.7 V

9 Bit

1.9 V

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

0 to 85 °C

Tray

GS81302T09GE

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

845 mA

0.45

16 M x 9

SRAM

144

SRAM

N/A

-

BGA-165

165

SMD/SMT

1.7 V

10

0 C

1.9 V

+ 70 C

375 MHz

有

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

DDR-II

N

SigmaDDR-II

GSI技术

GSI技术

Parallel

0 to 85 °C

Tray

GS81302R09E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

845 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

250 MHz

FBGA

0 to 85 °C

GS81302Q18E

144 Mbit

2

1.06 A

Pipelined

8 M x 18

22 Bit

144 Mbit

Commercial

N/A

-

BGA-209

209

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

14

-40 to 85 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

245 mA, 340 mA

7.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

200 MHz

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

200 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

0 to 85 °C

Tray

GS81302QT37E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

930 mA

0.45

4 M x 36

SRAM

144

SRAM

N/A

-

BGA-165

165

SigmaDDR-II

N

DDR-II

375 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

有

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

845 mA

0.45

8 M x 18

SRAM

144

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302DT11GE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

940 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 70 C

1.9 V

0 C

Commercial grade

Parallel

SMD/SMT

1.7 V

0 to 85 °C

Bulk

GS81302D18E

85 °C

0 °C

1.8 V

144 Mbit

2

940 mA

Pipelined

8 M x 18

21 Bit

144 Mbit

Commercial

无

N/A

-

BGA-165

165

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

350 MHz

0 to 85 °C

144 Mbit

940 mA

0.45

16 M x 8

144

Commercial

N/A

-

165

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D18E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM