N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS880E32CGT

DCD

Memory & Data Storage

9 Mbit

150 mA, 160 mA

7.5 ns

256 k x 32

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS840Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

160 mA, 190 mA

6.5 ns

128 k x 36

SRAM

SRAM

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

400 MHz

GS8672D18BGE

72 Mbit

1.38 A

4 M x 18

72

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q37BGE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.62 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161Z32DGD

NBT

Memory & Data Storage

18 Mbit

200 mA, 210 mA

7.5 ns

512 k x 32

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

240 mA, 310 mA

5 ns

512 k x 32

SRAM

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8160E32DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672D37BGE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.48 A

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

166 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS840Z18CGT

NBT Pipeline/Flow Through

Memory & Data Storage

4 Mbit

145 mA, 160 mA

7 ns

256 k x 18

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T18BE

SigmaDDR-II

Memory & Data Storage

72 Mbit

890 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D08BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

495 mA

2 M x 8

SRAM

SRAM

N/A

-

BGA-165

SigmaSIO DDR-II

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8182S18BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

495 mA

1 M x 18

SRAM

SRAM

N/A

-

BGA-119

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

250 MHz

18 Mbit

230 mA, 250 mA

5.5 ns

1 M x 18

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672D36BGE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.1 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

SyncBurst

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA

6.5 ns

512 k x 36

SRAM

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D18BGD-200I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

BGA

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8182D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

365 mA

1 M x 18

1.4 mm

18

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS8322Z18AGD

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

4.5 ns

70 °C

有

GS8322Z18AGD-333

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

0 to 85 °C

Tray

GS8322Z18AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

235 mA, 320 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

表面贴装

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

9 Bit

0 to 85 °C

GS8342TT11BGD

36 Mbit

1

565 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Commercial

N/A

-

10 Weeks

TQFP-100

YES

100

100

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP,

FLATPACK

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS816118DGT-250V

1.8 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

QFP

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS816118DGT

3A991.B.2.B

同步突发

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

18

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

N/A

-

BGA-119

YES

119

无

GS84032CB-150

131072 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.18

150 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

84

SyncBurst

3.6 V

BGA,

网格排列

128000

PLASTIC/EPOXY

未说明

70 °C

Tray

GS84032CB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

COMMERCIAL

4 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

128 k x 32

1.99 mm

32

4194304 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342D07BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

333 MHz

FBGA

-40 to 85 °C

Tray

GS8342D07BD

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

615 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.215 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182S36BD-333I

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA,

Tray

GS8182S36BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

655 mA

512 k x 36

1.4 mm

36

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

2000000

PLASTIC/EPOXY

0.45 ns

85 °C

GS8672D37BE-450

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.84

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8672D37BE

3A991.B.2.B

SigmaQuad-II+

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

OTHER

72 Mbit

SYNCHRONOUS

2.05 A

2 M x 36

1.5 mm

36

SRAM

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

6 Weeks

BGA-119

YES

48

48

表面贴装

+ 70 C

3.6 V

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

256000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

10 ns

70 °C

有

GS74117AGX-10

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

16 Bit

3.6 V

0 to 70 °C

GS74117AGX

e1

有

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

4 Mbit

1

ASYNCHRONOUS

105 mA

10 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.01 A

4194304 bit

Commercial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

10 mm

6 mm