N/A

-

8 Weeks

BGA-209

YES

209

209

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8162Z72CGC-150

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.17

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8162Z72CGC

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

COMMERCIAL

18 Mbit

8

SYNCHRONOUS

210 mA, 230 mA

7.5 ns

Flow-Through/Pipelined

256 k x 72

1.7 mm

72

18 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302R09GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

755 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

318 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302QT10GE

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.265 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mb

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

225 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

无

GS8644Z36E-225I

225 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

153.8@Flow-Through/225@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS8644Z36E

无

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

295 mA, 405 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.16 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302DT20GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.26 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302R36GE

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

895 mA

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

GSI技术

SigmaDDR-II

N

DDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS81302T08E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

755 mA

16 M x 8

SRAM

144

SRAM

N/A

-

BGA-165

165

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

GS81302T09GE

144 Mbit

2

700 mA

Pipelined

16 M x 9

23 Bit

144 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Bulk

GS81302QT07GE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.07 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

165

Synchronous

8 MWords

18 Bit

表面贴装

Compliant

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

100 °C

-40 °C

1.8 V

2

Pipelined

23 b

144 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T18GE

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

700 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

YES

144

144

33554432 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.7

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

32000000

PLASTIC/EPOXY

未说明

无

GS4288C09L-25I

3A991.B.2.B

95 °C

-40 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

9 b

32MX9

1.2 mm

9

24 b

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

表面贴装

2.7, 3.6 V

18 Bit

8 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS81284Z18B

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

144 Mbit

2

325 mA, 400 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-119

YES

119

119

+ 70 C

3.6 V

0 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS78132AGB-8

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

表面贴装

3.6 V

32 Bit

256 kWords

Asynchronous

3 V

3.3000 V

FBGA

Compliant

0 to 70 °C

GS78132AGB

e1

有

3A991.B.2.B

Asynchronous

锡银铜

70 °C

0 °C

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

8 Mbit

4

ASYNCHRONOUS

260 mA

8 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Commercial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Bulk

GS81302QT37GE

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

1.33 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

无

N/A

-

YES

144

144

16777216 words

1.8 V

TBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.62

BGA

Compliant

TBGA,

GRID ARRAY, THIN PROFILE

16000000

PLASTIC/EPOXY

未说明

有

GS4288C18GL-33

3A991.B.2.B

95 °C

0 °C

自动刷新

8542.32.00.28

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

1

SYNCHRONOUS

18 b

16MX18

1.2 mm

18

23 b

288 Mb

301989888 bit

300 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

11 mm

无

N/A

-

uBGA-144

YES

144

144

SMD/SMT

GSI技术

GSI技术

TBGA,

GRID ARRAY, THIN PROFILE

8000000

PLASTIC/EPOXY

未说明

有

GS4288C36GL-24I

8388608 words

1.8 V

TBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.1

BGA

Industrial grade

400 MHz

UBGA

36 Bit

表面贴装

Compliant

有

533 MHz

+ 95 C

1.9 V

0.423288 oz

- 40 C

36

1.7 V

-40 to 95 °C

Tray

GS4288C36GL

3A991.B.2.B

LLDRAM

95 °C

-40 °C

自动刷新

8542.32.00.28

Memory & Data Storage

CMOS

1.05 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

288 Mbit

1

SYNCHRONOUS

450 mA

36 Bit

8 M x 36

1.2 mm

36

22 Bit

DRAM

288 Mbit

301989888 bit

400 MHz

Industrial

DDR DRAM

1.9 V

1.7 V

多库页面突发

DRAM

11 mm

无

N/A

-

12 Weeks

BGA-119

YES

119

119

+ 85 C

3.6 V

- 40 C

21

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

无

GS78132AB-8I

3.3 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

32 Bit

3.6 V

表面贴装

-40 to 85 °C

GS78132AB

e0

无

3A991.B.2.B

Asynchronous

锡铅

THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT.

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

8 Mbit

4

ASYNCHRONOUS

280 mA

8 ns

256 k x 32

1.99 mm

32

18 Bit

SRAM

8 Mbit

8388608 bit

Industrial

PARALLEL

标准SRAM

3.6 V

3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT11GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.185 A

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

10

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS81284Z36B

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

4

375 mA, 430 mA

8 ns

Flow-Through/Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302D09E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

890 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT06GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.065 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

QDR-II

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS81302D36E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS81302DT20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.185 A

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Industrial grade

350 MHz

-40 to 100 °C

2

Pipelined

21 Bit

144 Mbit

Industrial