品牌是'GSI' (10000)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

包装/外壳

表面安装

引脚数

终端数量

操作温度

包装

系列

JESD-609代码

无铅代码

ECCN 代码

类型

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

子类别

技术

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

JESD-30代码

资历状况

电源

温度等级

内存大小

端口的数量

操作模式

电源电流-最大值

访问时间

建筑学

组织结构

输出特性

座位高度-最大

内存宽度

地址总线宽度

产品类别

密度

待机电流-最大值

记忆密度

筛选水平

并行/串行

I/O类型

内存IC类型

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

产品类别

长度

宽度

辐射硬化

GS81302DT06GE-400
GS81302DT06GE-400
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SigmaQuad-II+

Details

QDR-II

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302DT06GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.055 A

Pipelined

16 M x 8

22 Bit

SRAM

144 Mbit

Commercial

SRAM

GS81302T09E-375
GS81302T09E-375
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SigmaDDR-II

N

DDR-II

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

375 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302T09E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

845 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Commercial

SRAM

GS81302R18E-300I
GS81302R18E-300I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302R18E

SigmaDDR-II B4

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Industrial

SRAM

GS81302QT19E-250
GS81302QT19E-250
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

GS81302QT19E-250

8388608 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Tray

GS81302QT19E

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

1.06 A

8 M x 18

1.5 mm

18

SRAM

150994944 bit

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

GS71116AGU-7I
GS71116AGU-7I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

6 Weeks

BGA-48

YES

48

48

3.6 V

表面贴装

+ 85 C

3.6 V

- 40 C

240

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

64000

PLASTIC/EPOXY

BGA48,6X8,30

-40 °C

未说明

7 ns

85 °C

GS71116AGU-7I

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

FBGA

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

-40 to 85 °C

GS71116AGU

e1

3A991.B.2.B

Asynchronous

锡银铜

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

150 mA

7 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

SRAM

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

2 V

3.6 V

3 V

SRAM

8 mm

6 mm

GS81302Q36E-300
GS81302Q36E-300
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

QDR-II

N

SigmaQuad-II

GSI技术

GSI技术

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302Q36E

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

1.33 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

GS81302D18GE-250
GS81302D18GE-250
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

250 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302D18GE

SigmaQuad-II

Memory & Data Storage

144 Mbit

2

700 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Commercial

SRAM

GS81302T08E-333
GS81302T08E-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

Tray

GS81302T08E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

755 mA

16 M x 8

SRAM

144

SRAM

GS8321E18AGD-250IV
GS8321E18AGD-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

250 MHz

+ 85 C

2.7 V

- 40 C

18

-40 to 100 °C

Bulk

GS8321E18AGD

同步突发

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

245 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

GS81302D07GE-350I
GS81302D07GE-350I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 85 C

1.9 V

- 40 C

10

-40 to 100 °C

Bulk

GS81302D07GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

950 mA

Pipelined

16 M x 8

22 Bit

SRAM

144 Mb

Industrial

SRAM

GS81302D10E-333
GS81302D10E-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

10

0 to 85 °C

Tray

GS81302D10E

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

144 Mbit

2

890 mA

Pipelined

16 M x 9

22 Bit

SRAM

144 Mbit

Commercial

SRAM

GS8673EQ36BGK-550I
GS8673EQ36BGK-550I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

BGA-260

YES

260

260

2 MWords

36 Bit

1.4 V

表面贴装

Compliant

550 MHz

+ 100 C

1.4 V

- 40 C

8

1.25 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

未说明

0.4 ns

GS8673EQ36BGK-550I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

550/375 MHz

BGA

QDR

1.3500 V

1.25 V

Synchronous

-40 to 85 °C

Tray

GS8673EQ36BGK

3A991.B.2.B

SigmaQuad-IIIe B2

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.67 A

0.4

Pipelined

2 M x 36

2.3 mm

36

20 Bit

SRAM

72 Mbit

72

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

SRAM

22 mm

14 mm

GS880E36CGT-333I
GS880E36CGT-333I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

36

-40 to 85 °C

Tray

GS880E36CGT

DCD

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

GS8662T37BD-350
GS8662T37BD-350
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

表面贴装

1.9 V

36 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

Compliant

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662T37BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

755 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8342TT11BGD-500
GS8342TT11BGD-500
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

500 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342TT11BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

730 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

GS832132AGD-375I
GS832132AGD-375I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

375 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

GS832132AGD-375I

375 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

GS8662DT06BGD-500I
GS8662DT06BGD-500I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

Compliant

GSI技术

GSI技术

SigmaQuad-II+

DDR

500 MHz

-40 to 100 °C

Bulk

GS8662DT06BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

900 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

GS832218AD-375I
GS832218AD-375I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

Compliant

375 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.2 ns

85 °C

GS832218AD-375I

375 MHz

2097152 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

238@Flow-Through/375@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

18 Bit

-40 to 100 °C

Bulk

GS832218AD

e0

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

270 mA, 370 mA

4.2@Flow-Through/2.5

2 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

36 Mb

0.04 A

36

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

GS8662R09BGD-333
GS8662R09BGD-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8662TT37BD-300I
GS8662TT37BD-300I
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

165

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

1

Pipelined

20 Bit

72 Mbit

Industrial

GS8321Z36AD-200IV
GS8321Z36AD-200IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

GS8321Z36AD-200IV

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

-40 to 100 °C

Bulk

GS8321Z36AD

e0

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

GS8320Z36AGT-150V
GS8320Z36AGT-150V
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TQFP-100

100

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 70 C

2.7 V

0 C

18

0 to 85 °C

Bulk

GS8320Z36AGT

NBT

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

GS816236DB-250IV
GS816236DB-250IV
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

250 MHz

+ 85 C

2.7 V

- 40 C

21

-40 to 100 °C

Bulk

GS816236DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

GS8662QT10BD-333
GS8662QT10BD-333
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8662QT10BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

920 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

GS8662T20BGD-450
GS8662T20BGD-450
GSI Technology 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA-165

165

4 MWords

18 Bit

表面贴装

Compliant

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

0 to 85 °C

GS8662T20BGD

85 °C

0 °C

1.8 V

72 Mbit

1

695 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial