品牌是'GSI' (10000)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 建筑学 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 产品类别 | 长度 | 宽度 | 辐射硬化 | |||||||||||||||||||||||||||||||||||||||||||||
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![]() | GS81302DT06GE-400 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SigmaQuad-II+ | Details | QDR-II | Commercial grade | 400 MHz | FBGA | QDR | 1.8000 V | Synchronous | 16 MWords | 8 Bit | 表面贴装 | 有 | 400 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | 0 to 85 °C | Tray | GS81302DT06GE | SigmaQuad-II+ | Memory & Data Storage | 144 Mbit | 2 | 1.055 A | Pipelined | 16 M x 8 | 22 Bit | SRAM | 144 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302T09E-375 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SigmaDDR-II | N | DDR-II | Commercial grade | 375 MHz | FBGA | DDR | 1.8000 V | Synchronous | 16 MWords | 9 Bit | 表面贴装 | 有 | 375 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | 0 to 85 °C | Tray | GS81302T09E | SigmaDDR-II B2 | Memory & Data Storage | 144 Mbit | 2 | 845 mA | Pipelined | 16 M x 9 | 23 Bit | SRAM | 144 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302R18E-300I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | Parallel | GSI技术 | GSI技术 | SigmaDDR-II | DDR-II | Industrial grade | 300 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 300 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS81302R18E | SigmaDDR-II B4 | Memory & Data Storage | 144 Mbit | 2 | 700 mA | Pipelined | 8 M x 18 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302QT19E-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | BGA-165 | YES | 165 | 165 | LBGA, | GRID ARRAY, LOW PROFILE | 8000000 | PLASTIC/EPOXY | 未说明 | 0.45 ns | 70 °C | 无 | GS81302QT19E-250 | 8388608 words | 1.8 V | LBGA | RECTANGULAR | 不推荐 | GSI TECHNOLOGY | 5.06 | BGA | 有 | 250 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | N | QDR-II | Tray | GS81302QT19E | 无 | 3A991.B.2.B | SigmaQuad-II+ B2 | 流水线结构 | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | COMMERCIAL | 144 Mbit | SYNCHRONOUS | 1.06 A | 8 M x 18 | 1.5 mm | 18 | SRAM | 150994944 bit | PARALLEL | QDR SRAM | 1.9 V | 1.7 V | SRAM | 17 mm | 15 mm | ||||||||||||||||||||||||||||||||||
![]() | GS71116AGU-7I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | BGA-48 | YES | 48 | 48 | 3.6 V | 表面贴装 | + 85 C | 3.6 V | - 40 C | 240 | 3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | Details | SDR | TFBGA, BGA48,6X8,30 | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 | 64000 | PLASTIC/EPOXY | BGA48,6X8,30 | -40 °C | 未说明 | 7 ns | 85 °C | 有 | GS71116AGU-7I | 3.3 V | TFBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.19 | BGA | Industrial grade | FBGA | 3.3000 V | 3 V | Asynchronous | 64 kWords | 16 Bit | -40 to 85 °C | GS71116AGU | e1 | 有 | 3A991.B.2.B | Asynchronous | 锡银铜 | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | R-PBGA-B48 | 不合格 | 3.3 V | INDUSTRIAL | 1 Mbit | 1 | ASYNCHRONOUS | 150 mA | 7 ns | 64 k x 16 | 3-STATE | 1.2 mm | 16 | 16 Bit | SRAM | 1 Mbit | 0.005 A | 1048576 bit | Industrial | PARALLEL | COMMON | 标准SRAM | 2 V | 3.6 V | 3 V | SRAM | 8 mm | 6 mm | |||||||||||||||
![]() | GS81302Q36E-300 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | QDR-II | N | SigmaQuad-II | GSI技术 | GSI技术 | Commercial grade | 300 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 300 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | 0 to 85 °C | Tray | GS81302Q36E | SigmaQuad-II | Memory & Data Storage | 144 Mbit | 2 | 1.33 A | Pipelined | 4 M x 36 | 21 Bit | SRAM | 144 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D18GE-250 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | Details | QDR-II | Commercial grade | 250 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 250 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | 0 to 85 °C | Tray | GS81302D18GE | SigmaQuad-II | Memory & Data Storage | 144 Mbit | 2 | 700 mA | Pipelined | 8 M x 18 | 21 Bit | SRAM | 144 Mbit | Commercial | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302T08E-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | GSI技术 | GSI技术 | SigmaDDR-II | N | DDR-II | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 10 | 1.7 V | SMD/SMT | Parallel | Tray | GS81302T08E | SigmaDDR-II B2 | Memory & Data Storage | 144 Mbit | 755 mA | 16 M x 8 | SRAM | 144 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321E18AGD-250IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | Industrial grade | 181.8@Flow-Through/250@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 2 MWords | 18 Bit | 2, 2.7 V | 表面贴装 | Compliant | 有 | 250 MHz | + 85 C | 2.7 V | - 40 C | 18 | -40 to 100 °C | Bulk | GS8321E18AGD | 同步突发 | 100 °C | -40 °C | Memory & Data Storage | 36 Mbit | 2 | 245 mA, 285 mA | 5.5 ns | Flow-Through/Pipelined | 2 M x 18 | 21 Bit | SRAM | 36 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D07GE-350I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | QDR-II | Industrial grade | 350 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | Compliant | 有 | 350 MHz | + 85 C | 1.9 V | - 40 C | 10 | -40 to 100 °C | Bulk | GS81302D07GE | SigmaQuad-II+ B4 | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 2 | 950 mA | Pipelined | 16 M x 8 | 22 Bit | SRAM | 144 Mb | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D10E-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | QDR-II | Commercial grade | 333 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 9 Bit | 1.9 V | 表面贴装 | Compliant | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 10 | 0 to 85 °C | Tray | GS81302D10E | SigmaQuad-II+ B4 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 144 Mbit | 2 | 890 mA | Pipelined | 16 M x 9 | 22 Bit | SRAM | 144 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8673EQ36BGK-550I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | BGA-260 | YES | 260 | 260 | 2 MWords | 36 Bit | 1.4 V | 表面贴装 | Compliant | 有 | 550 MHz | + 100 C | 1.4 V | - 40 C | 8 | 1.25 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-IIIe | QDR-III | HBGA, | GRID ARRAY, HEAT SINK/SLUG | 2000000 | PLASTIC/EPOXY | 未说明 | 0.4 ns | 有 | GS8673EQ36BGK-550I | 1.3 V | HBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.73 | Industrial grade | 550/375 MHz | BGA | QDR | 1.3500 V | 1.25 V | Synchronous | -40 to 85 °C | Tray | GS8673EQ36BGK | 3A991.B.2.B | SigmaQuad-IIIe B2 | IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B260 | 72 Mbit | SYNCHRONOUS | 2.67 A | 0.4 | Pipelined | 2 M x 36 | 2.3 mm | 36 | 20 Bit | SRAM | 72 Mbit | 72 | Industrial | PARALLEL | DDR SRAM | 1.4 V | 1.25 V | SRAM | 22 mm | 14 mm | |||||||||||||||||||||||
![]() | GS880E36CGT-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP-100 | 100 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | Industrial grade | 222.2@Flow-Through/333@Pipelined MHz | TQFP | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 256 kWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | Compliant | 有 | 333 MHz | + 85 C | 3.6 V | - 40 C | 36 | -40 to 85 °C | Tray | GS880E36CGT | DCD | 85 °C | -40 °C | Memory & Data Storage | 9 Mbit | 2 | 200 mA, 260 mA | 4.5 ns | Flow-Through/Pipelined | 256 k x 36 | 18 Bit | SRAM | 9 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662T37BD-350 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR | Commercial grade | 表面贴装 | 1.9 V | 36 Bit | 2 MWords | Synchronous | 1.7 V | 1.8000 V | DDR | FBGA | 350 MHz | Compliant | 有 | 350 MHz | + 70 C | 1.9 V | 0 C | 15 | 0 to 85 °C | Bulk | GS8662T37BD | SigmaDDR-II+ B2 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 72 Mbit | 1 | 755 mA | Pipelined | 2 M x 36 | 20 Bit | SRAM | 72 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8342TT11BGD-500 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR | Commercial grade | 500 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 9 Bit | 1.9 V | 表面贴装 | Compliant | 有 | 500 MHz | + 70 C | 1.9 V | 0 C | 15 | 0 to 85 °C | Bulk | GS8342TT11BGD | SigmaQuad-II+ | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 36 Mbit | 1 | 730 mA | Pipelined | 4 M x 9 | 21 Bit | SRAM | 36 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS832132AGD-375I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 1 MWords | 32 Bit | 2.7, 3.6 V | 表面贴装 | Compliant | 375 MHz | + 85 C | 3.6 V | - 40 C | 2.3 V | SMD/SMT | Parallel | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 1000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 4.5 ns | 85 °C | 有 | GS832132AGD-375I | 375 MHz | 2.5 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.16 | BGA | Industrial grade | 238@Flow-Through/375@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | -40 to 100 °C | Bulk | 3A991.B.2.B | 100 °C | -40 °C | PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY | 8542.32.00.41 | SRAMs | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 2.5/3.3 V | INDUSTRIAL | 36 Mbit | 4 | SYNCHRONOUS | 290 mA, 400 mA | 4.2 ns | Flow-Through/Pipelined | 1 M x 32 | 3-STATE | 1.4 mm | 32 | 20 Bit | 36 Mbit | 0.04 A | 33554432 bit | Industrial | PARALLEL | COMMON | 缓存SRAM | 2.3 V | 2.7 V | 2.3 V | 15 mm | 13 mm | 无 | ||||||||||||||||
![]() | GS8662DT06BGD-500I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | Industrial grade | 500 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 8 Bit | 1.9 V | 表面贴装 | Compliant | GSI技术 | GSI技术 | SigmaQuad-II+ | DDR | 有 | 500 MHz | -40 to 100 °C | Bulk | GS8662DT06BGD | SigmaQuad-II+ | 100 °C | -40 °C | Memory & Data Storage | 1.8 V | 72 Mbit | 2 | 900 mA | Pipelined | 8 M x 8 | 21 Bit | SRAM | 72 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS832218AD-375I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | 2.7, 3.6 V | Compliant | 有 | 375 MHz | + 85 C | 3.6 V | - 40 C | 18 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 2000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 4.2 ns | 85 °C | 无 | GS832218AD-375I | 375 MHz | 2097152 words | 2.5 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.11 | BGA | 238@Flow-Through/375@Pipelined MHz | FBGA | 2.5, 3.3 V | 2.3, 3 V | 18 Bit | -40 to 100 °C | Bulk | GS832218AD | e0 | 无 | 3A991.B.2.B | Pipeline/Flow Through | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 2.5/3.3 V | INDUSTRIAL | 36 Mbit | 2 | SYNCHRONOUS | 270 mA, 370 mA | 4.2@Flow-Through/2.5 | 2 M x 18 | 3-STATE | 1.4 mm | 18 | 21 b | SRAM | 36 Mb | 0.04 A | 36 | PARALLEL | COMMON | 缓存SRAM | 2.3 V | 2.7 V | 2.3 V | SRAM | 15 mm | 13 mm | 无 | ||||||||||
![]() | GS8662R09BGD-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II | DDR | Commercial grade | 333 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | Compliant | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 15 | 0 to 85 °C | Tray | GS8662R09BGD | SigmaDDR-II B4 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 72 Mbit | 1 | 535 mA | Pipelined | 8 M x 9 | 21 Bit | SRAM | 72 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662TT37BD-300I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 165 | 300 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 2 MWords | 36 Bit | 1.9 V | 表面贴装 | Compliant | Industrial grade | -40 to 100 °C | Bulk | 100 °C | -40 °C | 1.8 V | 1 | Pipelined | 20 Bit | 72 Mbit | Industrial | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321Z36AD-200IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 165 | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | 36 Bit | 2, 2.7 V | 表面贴装 | Compliant | 有 | 200 MHz | + 85 C | 2.7 V | - 40 C | 18 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | SDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 1000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 6.5 ns | 85 °C | 无 | GS8321Z36AD-200IV | 200 MHz | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.16 | BGA | Industrial grade | 153.8@Flow-Through/200@Pipelined MHz | -40 to 100 °C | Bulk | GS8321Z36AD | e0 | 无 | 3A991.B.2.B | NBT | Tin/Lead (Sn/Pb) | 100 °C | -40 °C | ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | R-PBGA-B165 | 不合格 | 1.8/2.5 V | INDUSTRIAL | 36 Mbit | 4 | SYNCHRONOUS | 235 mA, 270 mA | 6.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.04 A | 37748736 bit | Industrial | PARALLEL | COMMON | ZBT SRAM | 1.7 V | 2 V | 1.7 V | SRAM | 15 mm | 13 mm | 无 | ||||
![]() | GS8320Z36AGT-150V | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TQFP-100 | 100 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | SDR | Commercial grade | 133.3@Flow-Through/150@Pipelined MHz | TQFP | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 1 MWords | 36 Bit | 2, 2.7 V | 表面贴装 | Compliant | 有 | 150 MHz | + 70 C | 2.7 V | 0 C | 18 | 0 to 85 °C | Bulk | GS8320Z36AGT | NBT | 85 °C | 0 °C | Memory & Data Storage | 36 Mbit | 4 | 200 mA, 210 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 20 Bit | SRAM | 36 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS816236DB-250IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-119 | 119 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | Industrial grade | 181.8@Flow-Through/250@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 512 kWords | 36 Bit | 2, 2.7 V | 表面贴装 | Compliant | 有 | 250 MHz | + 85 C | 2.7 V | - 40 C | 21 | -40 to 100 °C | Bulk | GS816236DB | Pipeline/Flow Through | 100 °C | -40 °C | Memory & Data Storage | 18 Mbit | 4 | 245 mA, 265 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Industrial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662QT10BD-333 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | DDR | Commercial grade | 333 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 8 MWords | 9 Bit | 1.9 V | 表面贴装 | Compliant | 有 | 333 MHz | + 70 C | 1.9 V | 0 C | 15 | 0 to 85 °C | Bulk | GS8662QT10BD | SigmaQuad-II+ B2 | 85 °C | 0 °C | Memory & Data Storage | 1.8 V | 72 Mbit | 2 | 920 mA | Pipelined | 8 M x 9 | 22 Bit | SRAM | 72 Mbit | Commercial | SRAM | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662T20BGD-450 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 165 | 4 MWords | 18 Bit | 表面贴装 | Compliant | 450 MHz | + 70 C | 1.9 V | 0 C | 1.7 V | SMD/SMT | Parallel | Commercial grade | 450 MHz | FBGA | DDR | 1.8000 V | Synchronous | 0 to 85 °C | GS8662T20BGD | 85 °C | 0 °C | 1.8 V | 72 Mbit | 1 | 695 mA | Pipelined | 4 M x 18 | 21 Bit | 72 Mbit | Commercial | 无 |
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