N/A

-

BGA-165

165

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

144 Mbit

1

790 mA

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302DT19GE

SigmaQuad-II+ B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

144 Mbit

2

825 mA

Pipelined

8 M x 18

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

125 mA, 150 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881E36CGD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

9 Mbit

4

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

3 V

Synchronous

2 MWords

36 Bit

3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8640E36GT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.55

QFP

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

3.3000 V

-40 to 85 °C

Tray

GS8640E36GT

e3

有

3A991.B.2.B

Pipeline/Flow Through

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

320 mA, 440 mA

5.5 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

300 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

590 mA

Pipelined

8 M x 9

21 Bit

72 Mbit

Industrial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Non-Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8662TT10BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

695 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

15

- 40 C

1.9 V

+ 85 C

450 MHz

有

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

DDR

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

-40 to 100 °C

Bulk

GS8342T37BD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

870 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SigmaDDR-II

DDR-II

Military grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-55 to 125 °C

Tray

GS81302T36E

SigmaDDR-II B2

Memory & Data Storage

144 Mbit

2

Pipelined

4 M x 36

22 Bit

SRAM

144 Mbit

Military

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

435 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662R09BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

545 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

200 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

70 °C

0.45 ns

未说明

PLASTIC/EPOXY

8000000

3

GRID ARRAY, LOW PROFILE

LBGA,

有

GS81302Q19GE-200

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

0 to 85 °C

Bulk

GS81302Q19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

875 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

165

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

-40 to 100 °C

Bulk

GS8662T38BD

100 °C

-40 °C

1.8 V

72 Mbit

1

765 mA

Pipelined

2 M x 36

20 b

72 Mbit

Industrial

无

N/A

-

BGA-165

165

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

Compliant

550 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

72 Mbit

1

1.085 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

375 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Bulk

GS8161Z18DD

NBT

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

250 mA, 320 mA

4.2 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.5@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS880E36CGT

DCD

85 °C

-40 °C

Memory & Data Storage

9 Mbit

2

160 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

181.5@Flow-Through/250@Pipelined MHz

Compliant

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

70 °C

有

GS880E36CGT-250V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Commercial grade

表面贴装

2, 2.7 V

36 Bit

256 kWords

0 to 70 °C

Tray

GS880E36CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

165

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

10

GSI技术

GSI技术

SigmaQuad-II+

Industrial grade

400 MHz

FBGA

-40 to 100 °C

Tray

GS81302D06E

100 °C

-40 °C

Memory & Data Storage

1.8 V

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

表面贴装

165-LBGA

YES

165

165-FPBGA (15x13)

165

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

Tray

GS8342D

活跃

Volatile

GSI Technology Inc.

Parallel

SMD/SMT

1.7 V

- 40 C

1.9 V

+ 85 C

400 MHz

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342DT37BGD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Bulk

-

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

100 °C

-40 °C

SRAMs

SRAM - Quad Port, Synchronous

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36Mbit

2

SYNCHRONOUS

400 MHz

915 mA

SRAM

Parallel

Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

18 Bit

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

1M x 36

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182Q09BGD-250

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.52

BGA

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

0 to 70 °C

Tray

GS8182Q09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

595 mA

0.45

2 M x 9

1.4 mm

9

SRAM

18

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-119

YES

119

119-FPBGA (22x14)

119

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS864236

活跃

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS864236GB-300I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS864236GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

-

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

2M x 36

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

36 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS8322Z36AGD-200I

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

BGA

1.41

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

表面贴装

-40 to 100 °C

Tray

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8162Z36DGD-200I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.77

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8162Z36DGD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8640Z18GT-200

4194304 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.89

QFP

有

200 MHz

+ 70 C

3.6 V

1.238571 oz

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Tray

GS8640Z18GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

205 mA, 270 mA

7.5 ns

4 M x 18

1.6 mm

18

SRAM

72

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

YES

165

165

15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

8 ns

70 °C

有

GS8321Z36GE-166

166 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

8.43

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.225 mA

1MX36

3-STATE

1.5 mm

36

0.06 A

37748736 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

17 mm

15 mm