GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	安装类型	包装/外壳	表面安装	引脚数	供应商器件包装	终端数量																厂商																																			操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	时钟频率	电源电流-最大值	访问时间	内存格式	内存接口	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	写入周期时间 - 字符、页面	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8182T36BGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165		GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	GS8182T36BGD-250	524288 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.51	BGA			有	250 MHz	DDR	Details	SigmaDDR-II	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	18	0 C	1.9 V	+ 70 C	LBGA,		Tray	GS8182T36BGD	e1	有	3A991.B.2.B	SigmaDDR-II B2	Tin/Silver/Copper (Sn/Ag/Cu)			PIPELINED ARCHITECTURE, LATE WRITE	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS		440 mA	450 ps				512 k x 36		1.4 mm	36			SRAM			18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM		15 mm	13 mm
GS840Z36CGT-100	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	TQFP-100	YES	100	100	LQFP, QFP100,.63X.87		FLATPACK, LOW PROFILE	128000	PLASTIC/EPOXY	QFP100,.63X.87	未说明	12 ns	70 °C	有	GS840Z36CGT-100	100 MHz	131072 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.4	QFP			有	100 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR		Tray	GS840Z36CGT			3A991.B.2.B	NBT Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3,3.3 V	COMMERCIAL	4 Mbit		SYNCHRONOUS		110 mA, 120 mA	12 ns				128 k x 36	3-STATE	1.6 mm	36			SRAM		0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	3.14 V	2.7 V	2.3 V	SRAM		20 mm	14 mm
GS8182Q08BD-167	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	DDR	Commercial grade						167 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	8 Bit	1.9 V	表面贴装	Compliant	有	167 MHz	+ 70 C	1.9 V		0 C	18	1.7 V	0 to 70 °C	Tray	GS8182Q08BD				SigmaQuad-II		70 °C	0 °C			Memory & Data Storage		1.8 V											18 Mbit	2			435 mA				Pipelined	2 M x 8					20 Bit	SRAM	18 Mbit			Commercial							SRAM				无
GS882Z18CGB-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR								Compliant	有	150 MHz	+ 85 C	3.6 V	- 40 C	42	2.3 V		Tray	GS882Z18CGB				NBT Pipeline/Flow Through		85 °C	-40 °C			Memory & Data Storage													9 Mbit	2			140 mA, 150 mA	7.5 ns				512 k x 18					18 b	SRAM	9 Mb										SRAM				无
GS816136DGT-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR								有	150 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT		Tray	GS816136DGT				Pipeline/Flow Through						Memory & Data Storage													18 Mbit				200 mA, 210 mA	7.5 ns				512 k x 36						SRAM											SRAM
GS8182Q36BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade						333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	512 kWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C		18	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS8182Q36BGD				SigmaQuad-II		70 °C	0 °C			Memory & Data Storage		1.8 V											18 Mbit	2			1.005 A				Pipelined	512 k x 36					18 Bit	SRAM	18 Mbit			Commercial							SRAM				无
GS816018DGT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 100 C	3.6 V	- 40 C		36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS816018DGT-200I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.32	QFP	Industrial grade			153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	-40 to 100 °C	Tray	GS816018DGT			3A991.B.2.B	Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS		215 mA	6.5 ns			Flow-Through/Pipelined	1 M x 18		1.6 mm	8		21 Bit	SRAM	18 Mbit		8388608 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM		20 mm	14 mm
GS8161E18DGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS8161E18DGD-250	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	BGA			有	250 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,			Tray	GS8161E18DGD			3A991.B.2.B	DCD Pipeline/Flow Through				FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS		210 mA, 230 mA	5.5 ns				1 M x 18		1.4 mm	18			SRAM			18874368 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM		15 mm	13 mm
GS8161Z36DD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	无	GS8161Z36DD-150	524288 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA			Compliant	有	150 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA,			Bulk	GS8161Z36DD			3A991.B.2.B	NBT		70 °C	0 °C	FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS		180 mA, 190 mA	7.5 ns				512 k x 36		1.4 mm	36		19 b	SRAM	18 Mb		18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM		15 mm	13 mm	无
GS8672Q18BGE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	QDR-II								有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT		Tray	GS8672Q18BGE				SigmaQuad-II		100 °C	-40 °C			Memory & Data Storage		1.8 V											72 Mbit	2			1.21 A					4 M x 18					21 b	SRAM	72 Mb		72								SRAM				无
GS8182D18BGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165		GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	BGA	5.17	GSI TECHNOLOGY	活跃	RECTANGULAR	LBGA	1.8 V	1048576 words	GS8182D18BGD-200			Compliant	有	200 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	DDR	LBGA,		Tray	GS8182D18BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	1.8 V	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit	2	SYNCHRONOUS		355 mA					1 M x 18		1.4 mm	18		18 b	SRAM	18 Mb		18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM		15 mm	13 mm	无
GS832236AGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	表面贴装	BGA-165	165	165-FPBGA (13x15)	GSI Technology Inc.	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Tray	GS832236	活跃	Industrial grade				222@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	-40 to 100 °C	Tray	GS832236AGD				Pipeline/Flow Through						Memory & Data Storage	SRAM - Synchronous, Standard	2.3V ~ 2.7V, 3V ~ 3.6V											36 Mbit	4		333 MHz	280 mA, 365 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	1 M x 36				-	20 Bit	SRAM	36 Mb			Industrial							SRAM	1M x 36
GS880Z36CGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	表面贴装	TQFP-100	YES	100	100-TQFP (20x14)	100	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	GSI Technology Inc.	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Tray	GS880Z	活跃	LQFP,	FLATPACK, LOW PROFILE	3	256000	PLASTIC/EPOXY	-40 °C	未说明	4.5 ns	85 °C	有	GS880Z36CGT-333I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.23	QFP	Industrial grade	222.2@Flow-Through/333@Pipelined MHz	TQFP	SDR	-40 to 85 °C	Tray	GS880Z36CGT	e3	有	3A991.B.2.B	NBT	Matte Tin (Sn)			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	SRAM - Synchronous, ZBT	2.3V ~ 2.7V, 3V ~ 3.6V	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	9 Mbit	1	SYNCHRONOUS	333 MHz	200 mA, 260 mA	4.5 ns	SRAM	Parallel	Flow-Through/Pipelined	256 k x 36		1.6 mm	36	-	18 Bit	SRAM	9 Mbit		9437184 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	256K x 36	20 mm	14 mm
GS88018CGT-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0.417150 oz	0 C		72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	未说明	6.5 ns	70 °C	有	GS88018CGT-200	200 MHz	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	1.7	QFP	Commercial grade			TQFP	SDR	2.5, 3.3 V	0 to 70 °C	Tray	GS88018CGT	e3	有	3A991.B.2.B	Pipeline/Flow Through	纯哑光锡			FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	COMMERCIAL	9 Mbit	2	SYNCHRONOUS		130 mA, 155 mA	6.5 ns			Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18			SRAM	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM		20 mm	14 mm
GS8342D18AE-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	165	165	Compliant	LBGA,	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8342D18AE-333I	2097152 words	1.8 V	LBGA	RECTANGULAR		GSI技术	Obsolete	GSI TECHNOLOGY	5.76	BGA									无	3A991.B.2.B			85 °C	-40 °C	流水线结构	8542.32.00.41		CMOS	1.8 V	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL		2	SYNCHRONOUS							2MX18		1.5 mm	18		19 b		36 Mb		37748736 bit		PARALLEL		DDR SRAM		1.95 V	1.7 V			17 mm	15 mm	无
GS8342Q36AGE-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	165	165	Compliant	BGA,	网格排列	3	1000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	GS8342Q36AGE-250	1048576 words	1.8 V	BGA	RECTANGULAR		GSI技术	Obsolete	GSI TECHNOLOGY	5.7	BGA								e1	有	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	流水线结构	8542.32.00.41		CMOS	1.8 V	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL		2	SYNCHRONOUS							1MX36		1.5 mm	36		19 b		36 Mb		37748736 bit		PARALLEL		DDR SRAM		1.95 V	1.7 V			17 mm	15 mm	无
GS84032AGT-100	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	100			LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	128000	PLASTIC/EPOXY	QFP100,.63X.87	未说明	12 ns	70 °C	有	GS84032AGT-100	100 MHz	131072 words	3.3 V	LQFP		RECTANGULAR	GSI技术	Obsolete	GSI TECHNOLOGY	5.67	QFP						e3	有	3A991.B.2.B		纯哑光锡			FLOW-THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	SRAMs	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3,3.3 V	COMMERCIAL			SYNCHRONOUS		0.19 mA					128KX32	3-STATE	1.6 mm	32					0.02 A	4194304 bit		PARALLEL	COMMON	缓存SRAM	3.14 V	3.6 V	3 V			20 mm	14 mm
GS8321E36E-166	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1				Compliant														70 °C	0 °C																	4													20 b		36 Mb														无
GS880Z36BT-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	100	85 °C	GS880Z36BT-250I	262144 words	2.5 V	LQFP	RECTANGULAR	Rochester Electronics LLC	接触制造商	ROCHESTER ELECTRONICS LLC		5.62						LQFP,	FLATPACK, LOW PROFILE	256000	PLASTIC/EPOXY	-40 °C	5.5 ns						3A991.B.2.A					FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41		CMOS		QUAD	鸥翼		1	0.65 mm	unknown	R-PQFP-G100			INDUSTRIAL			SYNCHRONOUS							256KX36		1.6 mm	36						9437184 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V			20 mm	14 mm
GS74116ATP-8I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	44	44					Non-Compliant	TSOP2, TSOP44,.46,32	SMALL OUTLINE, THIN PROFILE	3	256000	PLASTIC/EPOXY	TSOP44,.46,32	-40 °C	未说明	8 ns	85 °C	无	GS74116ATP-8I	262144 words	3.3 V		TSOP2	RECTANGULAR	GSI技术	Obsolete	GSI TECHNOLOGY	5.32	TSOP2				e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)				8542.32.00.41	SRAMs	CMOS		DUAL	鸥翼	未说明	1	0.8 mm	compliant	R-PDSO-G44	不合格	3.3 V	INDUSTRIAL			ASYNCHRONOUS		0.14 mA					256KX16	3-STATE	1.2 mm	16					0.02 A	4194304 bit		PARALLEL	COMMON	标准SRAM	3 V	3.6 V	3 V			18.41 mm	10.16 mm
GS8672D38BGE-550	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II								有	550 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT		Tray	GS8672D38BGE				SigmaQuad-II+ B4						Memory & Data Storage													72 Mbit				2.44 A					2 M x 36						SRAM			72								SRAM
GS8322Z72C-225M	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-209	YES	209	209	2.3, 3 V	Synchronous	512 kWords	72 Bit	2.7, 3.6 V	表面贴装	有	225 MHz	+ 125 C	3.6 V	- 55 C		14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA, BGA209,11X19,40	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	BGA209,11X19,40	-55 °C	4.4 ns	125 °C	无	GS8322Z72C-225M	225 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Military grade			143@Flow-Through/225@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	-55 to 125 °C	Tray	GS8322Z72C			3A991.B.2.B	NBT Pipeline/Flow Through		125 °C	-55 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B209	不合格	2.5/3.3 V	MILITARY	36 Mbit	8	SYNCHRONOUS		300 mA, 390 mA	7 ns			Flow-Through/Pipelined	512 k x 72	3-STATE	1.7 mm	72		19 Bit	SRAM	36 Mbit	0.2 A	37748736 bit	Military	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM		22 mm	14 mm	无
GS842Z36CGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	7 Weeks	BGA-119	YES	119	119	BGA, BGA119,7X17,50		网格排列	128000	PLASTIC/EPOXY	BGA119,7X17,50	未说明	6.5 ns	70 °C	有	GS842Z36CGB-200	200 MHz	131072 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA			有	200 MHz	+ 70 C	3.6 V	0 C	84	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR		Tray	GS842Z36CGB			3A991.B.2.B	NBT Pipeline/Flow Through		85 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格	2.5/3.3 V	COMMERCIAL	4 Mbit	4	SYNCHRONOUS		140 mA, 170 mA	6.5 ns				128 k x 36	3-STATE	1.99 mm	36		17 b	SRAM	4 Mb	0.025 A	4718592 bit		PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM		22 mm	14 mm	无
GS881Z36CGT-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	GSI技术	NBT SRAM	Details	SDR	Commercial grade						TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	36		2.3 V	SMD/SMT	Parallel	GSI技术	0 to 70 °C	Tray	GS881Z36CGT				NBT Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage													9 Mbit	1			165 mA, 225 mA	5 ns			Flow-Through/Pipelined	256 k x 36					18 b	SRAM	9 Mbit			Commercial							SRAM				无
GS8128418B-167IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	18 Bit	2, 2.7 V	表面贴装	有	167 MHz	SDR	N	SyncBurst	GSI技术		GSI技术	Parallel	SMD/SMT	2.3 V	10	- 40 C	3.6 V	+ 85 C	BGA,	网格排列	8000000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	无	GS8128418B-167IV	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.06	BGA	Industrial grade			167 MHz	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	8 MWords	-40 to 85 °C	Tray	GS8128418B	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)			PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	144 Mbit	2	SYNCHRONOUS		350 mA, 400 mA	8 ns			Flow-Through/Pipelined	8 M x 18		1.99 mm	18		23 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM		22 mm	14 mm