N/A

-

12 Weeks

BGA-165

YES

165

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672Q20BE-400

400 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Tray

GS8672Q20BE

3A991.B.2.B

SigmaQuad-II+ B2

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.36 A

4 M x 18

3-STATE

1.4 mm

18

21 b

SRAM

72 Mb

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

YES

165

165

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662T18GE-250

4194304 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.7

BGA

15 X 17 MM, 1MM PITCH, ROHS COMPLIANT, FPBGA-165

GRID ARRAY, LOW PROFILE

3

4000000

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

unknown

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

4MX18

1.5 mm

18

75497472 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

0 C

3.6 V

+ 70 C

200 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

85 °C

有

GS832136AGD-200

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

0 to 85 °C

Tray

GS832136AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

-

有

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

32 Bit

3.6 V

表面贴装

SDR

Details

GSI技术

GSI技术

Parallel

SMD/SMT

3 V

21

0 C

0.726956 oz

3.6 V

+ 70 C

0 to 70 °C

GS78132AGB

Asynchronous

70 °C

0 °C

Memory & Data Storage

3.3 V

8 Mbit

4

210 mA

10 ns

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

无

N/A

-

13 Weeks, 4 Days

TSOP-44

YES

44

44

-

+ 85 C

3.6 V

- 40 C

3 V

SMD/SMT

Parallel

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

8 ns

85 °C

有

GS71116AGP-8I

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.9

TSOP2

Industrial grade

TSOP-II

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

Compliant

-40 to 85 °C

GS71116AGP

e3

有

3A991.B.2.B

Matte Tin (Sn)

85 °C

-40 °C

8542.32.00.41

SRAMs

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

130 mA

8 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

无

N/A

-

uBGA-144

YES

144

144

1.8 V

TBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.48

BGA

Compliant

有

533 MHz

+ 95 C

1.9 V

0 C

36

1.7 V

SMD/SMT

GSI技术

GSI技术

TBGA,

GRID ARRAY, THIN PROFILE

8000000

PLASTIC/EPOXY

未说明

有

GS4288C36GL-25

8388608 words

GS4288C36GL

3A991.B.2.B

LLDRAM II

95 °C

0 °C

自动刷新

8542.32.00.28

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

288 Mbit

1

SYNCHRONOUS

465 mA

36 b

8 M x 36

1.2 mm

36

22 b

DRAM

288 Mb

301989888 bit

400 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

DRAM

11 mm

无

N/A

-

BGA-165

165

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

DDR

Details

SigmaDDR-II+

0 to 85 °C

Tray

GS8662TT38BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

985 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

N/A

-

6 Weeks

TSOP-44

YES

44

44

3.6 V

- 40 C

3 V

SMD/SMT

Parallel

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

-40 °C

未说明

12 ns

85 °C

有

GS71116AGP-12I

3.3 V

TSOP2

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.5

TSOP2

Industrial grade

TSOP-II

3.3000 V

3 V

Asynchronous

64 kWords

16 Bit

3.6 V

表面贴装

-

+ 85 C

-40 to 85 °C

GS71116AGP

e3

有

3A991.B.2.B

纯哑光锡

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

INDUSTRIAL

1 Mbit

1

ASYNCHRONOUS

90 mA

12 ns

64 k x 16

3-STATE

1.2 mm

16

16 Bit

1 Mbit

0.005 A

1048576 bit

Industrial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

网格排列

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS864218B-250I

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.15

BGA

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

BGA,

-40 to 85 °C

GS864218B

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

250 mA, 335 mA

6.5 ns

Flow-Through/Pipelined

4MX18

1.99 mm

18

72 Mb

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

15

0 C

1.9 V

+ 70 C

500 MHz

有

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

DDR

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

0 to 85 °C

Tray

GS8342TT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

945 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Bulk

GS8342R36BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

725 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

GS8672Q18BGE

85 °C

-40 °C

1.8 V

72 Mbit

2

1.38 A

4 M x 18

21 b

72 Mb

72

无

N/A

-

BGA-165

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

1.51 A

4 M x 18

20 b

72 Mb

72

无

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

-40 to 100 °C

Bulk

GS8342Q09BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

895 mA

0.45

4 M x 9

21 b

SRAM

36 Mb

36

Industrial

SRAM

无

N/A

-

BGA-165

165

18 Bit

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

0 to 85 °C

Bulk

GS8342R18BD

85 °C

0 °C

1.8 V

36 Mbit

1

515 mA

Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Bulk

GS8342D09BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

540 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

GS8672T19BGE

85 °C

-40 °C

1.8 V

72 Mbit

2

1.19 A

4 M x 18

22 b

72 Mb

72

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

GS881Z18CGT-200I

524288 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.51

QFP

Compliant

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS881Z18CGT

e3

有

3A991.B.2.B

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

512 k x 18

1.6 mm

18

18 b

9 Mb

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

BGA-165

Compliant

133 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

GS8182Q36BD

70 °C

0 °C

1.8 V

18 Mbit

2

415 mA

512 k x 36

18 b

18 Mb

无

N/A

-

8 Weeks

BGA-119

YES

119

119

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS88218CB-200I

524288 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS88218CB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

512 k x 18

1.77 mm

18

19 b

SRAM

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Bulk

GS8342DT19BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

530 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D19BD

SigmaQuad II+

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

605 mA

1 M x 18

18 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

Compliant

有

300 MHz

+ 125 C

- 55 C

15

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Bulk

GS8672T36BE

SigmaDDR-II

Memory & Data Storage

1.8 V

72 Mbit

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS881E36CGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 b

SRAM

9 Mbit

Commercial

SRAM

无