N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

0 to 85 °C

Tray

GS816236DGB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672D20BGE

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.49 A

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

2.7, 3.6 V

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

0 to 70 °C

Tray

GS88132CGD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

165 mA, 225 mA

5@Flow-Through/2.5@P

256 k x 36

17 b

SRAM

9 Mb

9

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

570 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

1.7 V

21

0 C

2.7 V

+ 70 C

150 MHz

有

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS816218DGB

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-119

YES

119

119

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8162Z36DGB-250V

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8162Z36DGB

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

1.99 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SDR

Details

SyncBurst

GSI技术

GSI技术

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS816218DGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T19BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

有

GS832036AGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

555 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS816236DGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342DT38BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

915 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Bulk

GS816136DD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

210 mA

6.5 ns

512 k x 36

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

+ 70 C

2.6 V

0 C

2.4 V

SMD/SMT

Parallel

167 MHz

GS8180QV36BGD

18 Mbit

512 k x 36

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T38BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.72 A

2 M x 36

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS816132DGT

同步突发

Memory & Data Storage

18 Mbit

245 mA, 265 mA

5.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672Q36BGE

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.86 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

5.5 ns

85 °C

无

GS832136AD-250I

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

-40 to 100 °C

Bulk

GS832136AD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 b

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

0 C

1.9 V

+ 70 C

400 MHz

有

Compliant

QDR-II

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Bulk

GS8672Q37BE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.86 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-119

119

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

Bulk

GS8162Z18DB

85 °C

0 °C

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Commercial

无

N/A

-

TQFP-100

100

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

0 C

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

SDR

NBT SRAM

0 to 70 °C

GS880Z32CGT

NBT

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

155 mA, 195 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881E32CGT-150

QFP

5.3

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

2.5 V

262144 words

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS881E32CGT

e3

有

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256 k x 32

1.6 mm

32

18 b

SRAM

8 Mb

8388608 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

3.3000 V

3 V

Synchronous

2 MWords

36 Bit

3.6 V

表面贴装

Compliant

有

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8640FZ36GT-6.5I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

QFP

Industrial grade

153.8 MHz

TQFP

SDR

-40 to 85 °C

Tray

GS8640FZ36GT

e3

有

3A991.B.2.B

NBT Flow Through

Matte Tin (Sn)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

275 mA

6.5 ns

Flow-Through

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Bulk

GS8342T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

570 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672D18BE-333

BGA

5.42

GSI TECHNOLOGY

Obsolete

RECTANGULAR

LBGA

1.8 V

4194304 words

333 MHz

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

Tray

GS8672D18BE

3A991.B.2.B

SigmaQuad-II

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

SYNCHRONOUS

1.19 A

4 M x 18

3-STATE

1.5 mm

18

SRAM

72

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm