GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																													操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS816118DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	200 MHz	+ 85 C	2.7 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	0 to 85 °C																						18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit		18 Mbit			Commercial
GS816118DGT-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				200@Flow-Through/333@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 85 C	2.7 V	0 C	18	0 to 85 °C	Tray	GS816118DGT				同步突发				Memory & Data Storage												18 Mbit	2		220 mA, 280 mA	5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8161Z32DD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	表面贴装	150 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	无	GS8161Z32DD-150I	2.5 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.3	BGA	Industrial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	32 Bit	2.7, 3.6 V	-40 to 85 °C					3A991.B.2.B			FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit	4	SYNCHRONOUS	200 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32	19 Bit		18 Mbit		16777216 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V		15 mm	13 mm
GS832218AGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	0 to 85 °C	Tray	GS832218AGD				Pipeline/Flow Through				Memory & Data Storage												36 Mbit	2		215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342TT38BD-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342TT38BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		860 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816218DGD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	18	0 to 85 °C	Tray	GS816218DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342R08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342R08BGD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Industrial grade	-40 to 100 °C	Tray	GS8342R08BGD			3A991.B.2.B	SigmaDDR-II B4		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	1	SYNCHRONOUS	405 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	20 Bit	SRAM	36 Mbit	0.185 A	33554432 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342QT37BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342QT37BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		765 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816236DGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	-40 to 100 °C	Tray	GS816236DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8161Z32DGD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	5 ns	70 °C	有	GS8161Z32DGD-333V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	200@Flow-Through/333@Pipelined MHz	FBGA	SDR	0 to 85 °C	Tray	GS8161Z32DGD			3A991.B.2.B	NBT		FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	240 mA, 310 mA	5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32	19 Bit	SRAM	18 Mbit		33554432 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	15 mm	13 mm
GS8342T20BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342T20BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		610 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS816218DGB-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS816218DGB-150I	1048576 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	有	150 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst		Tray	GS816218DGB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			INDUSTRIAL	18 Mbit		SYNCHRONOUS	190 mA, 200 mA	7.5 ns		1 M x 18		1.99 mm	18		SRAM			18874368 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS816118DD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	150 MHz	+ 85 C	2.7 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	0 to 85 °C																						18 Mbit	2		160 mA, 180 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit		18 Mbit			Commercial
GS8342QT19BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	250 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342QT19BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		665 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342DT38BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	85 °C	无	GS8342DT38BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	350 MHz	0 to 85 °C	Tray	GS8342DT38BD	e0	无	3A991.B.2.B	SigmaQuad-II+	Tin/Lead (Sn/Pb)			Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	OTHER	36 Mbit	2	SYNCHRONOUS	850 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342S18BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342S18BD-350I	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	350 MHz	-40 to 100 °C	Tray	GS8342S18BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	675 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit	0.23 A	37748736 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342D36BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	GSI技术	SigmaQuad-II	N	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	Synchronous	1 MWords	36 Bit	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	0 to 85 °C	Tray	GS8342D36BD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		905 mA		Pipelined	1 M x 36				18 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816218DGD-333V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 70 C	2.7 V	0 C	18	0 to 85 °C	Tray	GS816218DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		220 mA, 280 mA	5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342DT10BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342DT10BD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		530 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8162Z36DB-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	GSI技术	Parallel	SMD/SMT	1.7 V	21	0 C	2.7 V	+ 70 C	Commercial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	SDR	N	NBT SRAM	GSI技术	0 to 85 °C	Tray	GS8162Z36DB				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8161Z18DGT-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS8161Z18DGT-200I	1048576 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	QFP	有	200 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS8161Z18DGT			3A991.B.2.B	NBT		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			INDUSTRIAL	18 Mbit		SYNCHRONOUS	215 mA	6.5 ns		1 M x 18		1.6 mm	18		SRAM			18874368 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8342R18BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342R18BGD				SigmaDDR-II B4				Memory & Data Storage												36 Mbit	1		515 mA		Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342T36BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342T36BD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.33	BGA	Industrial grade	250 MHz	-40 to 100 °C	Tray	GS8342T36BD			3A991.B.2.B	SigmaDDR-II B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	1	SYNCHRONOUS	585 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.185 A	37748736 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342S18BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR				FBGA	1.8000 V	Synchronous	18 Bit	-40 to 100 °C	Tray	GS8342S18BD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit			615 mA	0.45		2 M x 18					SRAM			36								SRAM
GS8342D18BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	Commercial grade				400 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	0 to 85 °C	Tray	GS8342D18BD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		705 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mbit			Commercial							SRAM