N/A

-

BGA-165

165

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

-40 to 85 °C

Tray

GS8182Q18BD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

870 mA

Pipelined

1 M x 18

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

Tray

GS8182Q09BD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

510 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

Bulk

GS8321E32AGD

100 °C

-40 °C

36 Mbit

4

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Industrial

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342R18BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Tray

GS8182S18BGD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

525 mA

1 M x 18

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D09BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

485 mA

2 M x 9

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672Q36BGE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.31 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

735 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342TT10BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

515 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T18BGE

SigmaDDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

890 mA

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

DDR

0 to 85 °C

Tray

GS8342DT19BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

605 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T20BGE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.17 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342T18BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

SigmaCIO DDR-II

DDR

Compliant

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Tray

GS8342T36BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

735 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

21

-40 to 100 °C

Tray

GS816236DGB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

4

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

有

167 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

无

GS8182S36BD-167I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

167 MHz

FBGA

-40 to 85 °C

Tray

GS8182S36BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

390 mA

Pipelined

512 k x 36

1.4 mm

36

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-119

119

SDR

133.3@Flow-Through/150@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

0 to 85 °C

Bulk

GS8322Z36AB

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5@Flow-Through/3.8

1 M x 36

20 b

SRAM

36 Mb

36

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

85 °C

无

GS8321E18AD-200

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

Bulk

GS8321E18AD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

Bulk

GS8672T19BGE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

910 mA

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

GS8342S09BD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

615 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

0 to 85 °C

Bulk

GS8342D37BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

775 mA

Pipelined

1 M x 36

18 b

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

GSI TECHNOLOGY

5.22

BGA

GS8342D38BGD-400

有

70 °C

0.45 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

1000000

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

Commercial grade

400 MHz

0 to 70 °C

Tray

GS8342D38BGD

3A991.B.2.B

SigmaQuad-II+

70 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

905 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

250 MHz

+ 70 C

2.7 V

0 C

0 to 85 °C

Bulk

GS8161Z32DD

NBT

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

167 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

Tray

GS8182D08BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

315 mA

2 M x 8

19 b

SRAM

18 Mb

SRAM

无