N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342QT07BGD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

250 MHz

0 to 85 °C

Bulk

GS8342QT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/333@Pipelined MHz

0 to 70 °C

Bulk

70 °C

0 °C

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q38BGE

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

2.05 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672D19BE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.19 A

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342DT20BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

400 MHz

-40 to 100 °C

Bulk

GS8342DT20BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

100 °C

-40 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

715 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

Compliant

有

300 MHz

+ 125 C

- 55 C

15

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Bulk

GS8672D18BE

SigmaQuad-II

Memory & Data Storage

1.8 V

72 Mbit

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SigmaQuad-I

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

2.3 ns

85 °C

有

GS8180QV36BGD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.24

BGA

Compliant

有

200 MHz

+ 85 C

2.6 V

- 40 C

18

2.4 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8180QV36BGD

e1

有

3A991.B.2.B

SigmaQuad

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

2.5 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

512 k x 36

1.4 mm

36

18 b

SRAM

18 Mb

18874368 bit

PARALLEL

标准SRAM

2.6 V

2.4 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 70 °C

Bulk

GS8161E32DD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

FBGA

SDR

2.5, 3.3 V

-40 to 100 °C

Bulk

100 °C

-40 °C

36 Mbit

2

235 mA, 275 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 b

36 Mbit

Industrial

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672T19BGE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.07 A

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

300 MHz

FBGA

1.8000 V

1.7 V

18 Bit

1.9 V

Compliant

300 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Bulk

GS8342S18BD

85 °C

0 °C

1.8 V

36 Mbit

2

530 mA

0.45

2 M x 18

20 b

36 Mb

36

无

N/A

-

BGA-165

- 40 C

1.9 V

+ 85 C

333 MHz

有

Compliant

DDR-II

SigmaDDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Bulk

GS8672T36BE

SigmaDDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.28 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182Q18BD-250I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8182Q18BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

605 mA

1 M x 18

1.4 mm

18

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

-40 to 100 °C

Bulk

GS832236AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS816118DD-200I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

Bulk

GS816118DD

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

0 C

1.9 V

+ 70 C

200 MHz

有

Compliant

DDR

SigmaSIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

Tray

GS8182S08BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

355 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q18BGE

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.19 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

18

0 to 85 °C

Bulk

GS832132AGD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D36BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

515 mA

512 k x 36

17 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182S09BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

680 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

375 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q19BGE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.3 A

4 M x 18

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

250 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881E18CGT

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

145 mA, 180 mA

5.5 ns

512 k x 18

SRAM

SRAM

N/A

-

BGA-165

SigmaDDR-II+

DDR-II

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8672T20BE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.38 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672D36BGE

SigmaQuad-II

Memory & Data Storage

72 Mbit

1.6 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

N

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM