N/A

-

100

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Commercial grade

0 to 70 °C

2

Flow-Through

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

0 to 85 °C

Tray

GS816136DGD

同步突发

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

615 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342S36BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

905 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

21

0 to 85 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Commercial grade

375 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182D18BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

680 mA

Pipelined

1 M x 18

18 Bit

SRAM

18 Mb

Commercial

SRAM

N/A

-

BGA-165

165

GSI技术

Parallel

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

SDR

Details

NBT SRAM

GSI技术

0 to 70 °C

Tray

GS882Z36CGD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT37BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS8342TT37BD

e0

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

580 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342QT07BD-200I

200 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

200 MHz

-40 to 100 °C

Tray

GS8342QT07BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

565 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

-40 to 100 °C

GS8342TT20BGD

36 Mbit

1

610 mA

Pipelined

2 M x 18

20 Bit

36 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

N

DDR

Commercial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342S08BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342T07BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342T07BGD

3A991.B.2.B

SigmaDDR-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.195 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342T18BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

450 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

133 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

0.5 ns

70 °C

无

GS8182Q18BD-133

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

133 MHz

FBGA

QDR

0 to 70 °C

Tray

GS8182Q18BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

375 mA

Pipelined

1 M x 18

1.4 mm

18

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342Q09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

119

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Commercial grade

0 to 85 °C

2

Flow-Through/Pipelined

21 Bit

36 Mbit

Commercial

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

Tray

GS8182Q09BD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

510 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

-40 to 100 °C

Bulk

GS832236AGD

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS816118DD-200I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 85 °C

Bulk

GS816118DD

3A991.B.2.B

Pipeline/Flow Through

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D18BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Industrial grade

250 MHz

-40 to 100 °C

Tray

GS8342D18BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

470 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.195 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672Q37BGE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.6 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672Q20BGE

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.38 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 85 °C

Bulk

GS8342D37BGD

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

N

DDR-II

Commercial grade

450 MHz

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

0 to 70 °C

Tray

GS81302T07E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1 A

0.45

16 M x 8

SRAM

144

Commercial

SRAM

N/A

-

BGA-165

165

350 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

Compliant

0 to 85 °C

Bulk

GS8342TT10BGD

85 °C

0 °C

1.8 V

36 Mbit

1

565 mA

0.45

4 M x 9

21 b

36 Mb

36

无