N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320E36AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D08BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Bulk

GS8342D08BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

470 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.195 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342TT20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/333@Pipelined MHz

0 to 85 °C

Bulk

GS8162Z18DD

85 °C

0 °C

18 Mbit

2

220 mA, 280 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

-40 to 100 °C

Bulk

GS8321E32AD

DCD Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

4

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

200 MHz

+ 100 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS816018DGT-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Bulk

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

21 b

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342QT07BGD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

250 MHz

0 to 85 °C

Bulk

GS8342QT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/333@Pipelined MHz

0 to 70 °C

Bulk

70 °C

0 °C

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q38BGE

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

2.05 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

375 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182S09BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

680 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182D08BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

515 mA

2 M x 8

19 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Commercial grade

350 MHz

1.8000 V

9 Bit

0 to 85 °C

Bulk

GS8342T09BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

0.45

4 M x 9

21 b

SRAM

36 Mb

36

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q19BE

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.12 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

有

167 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

无

GS8182S36BD-167I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

167 MHz

FBGA

DDR

-40 to 85 °C

Tray

GS8182S36BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

390 mA

Pipelined

512 k x 36

1.4 mm

36

18 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-119

119

133.3@Flow-Through/150@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

Compliant

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

0 to 85 °C

Bulk

GS8322Z36AB

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5@Flow-Through/3.8

1 M x 36

20 b

SRAM

36 Mb

36

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

SigmaQuad-I

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

2.3 ns

85 °C

有

GS8180QV36BGD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.24

BGA

Compliant

有

200 MHz

+ 85 C

2.6 V

- 40 C

18

2.4 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8180QV36BGD

e1

有

3A991.B.2.B

SigmaQuad

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

2.5 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

512 k x 36

1.4 mm

36

18 b

SRAM

18 Mb

18874368 bit

PARALLEL

标准SRAM

2.6 V

2.4 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 70 °C

Bulk

GS8161E32DD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342T18BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

5.5 ns

70 °C

无

GS832236AB-250

250 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Bulk

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

85 °C

0 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672D38BGE

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

2.05 A

2 M x 36

19 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

2.3 ns

85 °C

无

GS88237CB-250I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

250 MHz

FBGA

SDR

-40 to 85 °C

Tray

GS88237CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline

Tin/Lead (Sn/Pb)

85 °C

-40 °C

PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

215 mA

Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8182Q08BGD

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

870 mA

Pipelined

2 M x 8

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342S08BGD

SigmaSIO DDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8161Z32DD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

GSI技术

GSI技术

NBT SRAM

SDR

Compliant

LBGA,

Tray

GS8161Z32DD

3A991.B.2.B

NBT

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

512 k x 32

1.4 mm

32

19 b

SRAM

18 Mb

16777216 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS816236DD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS816236DD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无