GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别
GS8342D08BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	Commercial grade				表面贴装	1.9 V	8 Bit	4 MWords	Synchronous	1.7 V	1.8000 V	QDR	FBGA	350 MHz	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D08BD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		665 mA		Pipelined	4 M x 8				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816218DGB-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	-40 to 100 °C	Tray	GS816218DGB				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8182D37BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SigmaQuad-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	有	GS8182D37BGD-300	300 MHz	524288 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.21	BGA	有	300 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术		Tray	GS8182D37BGD	e1	有	3A991.B.2.B	SigmaQuad II+	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	18 Mbit		SYNCHRONOUS	535 mA			512 k x 36	3-STATE	1.4 mm	36		SRAM		0.155 A	18874368 bit		PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	10 mm
GS816218DGB-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.25	BGA	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	BGA,	网格排列	1000000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	有	GS816218DGB-250I	1048576 words	2.5 V			GS816218DGB			3A991.B.2.B			ALSO OPERATES AT 3.3V	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			INDUSTRIAL	18 Mbit		SYNCHRONOUS	230 mA, 250 mA	5.5 ns		1 M x 18		1.99 mm	18					18874368 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V		22 mm	14 mm
GS8342TT10BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT10BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		450 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342QT37BD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	Commercial grade				200 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	表面贴装	1.9 V	36 Bit	1 MWords	有	200 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342QT37BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		640 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816036DGT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	18	0 C	3.6 V	+ 85 C	250 MHz	有	LQFP,	FLATPACK, LOW PROFILE	512000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS816036DGT-250V	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	QFP	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS816036DGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	R-PQFP-G100			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	230 mA, 250 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36		1.6 mm	36	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS8342Q37BD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	Industrial grade				200 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	200 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342Q37BD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		650 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342DT19BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342DT19BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		540 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mb			Industrial							SRAM
GS8162Z36DGB-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	Parallel	SMD/SMT	2.3 V	21	- 40 C	3.6 V	+ 85 C	Industrial grade				222.2@Flow-Through/333@Pipelined MHz	表面贴装	2.7, 3.6 V	36 Bit	512 kWords	Synchronous	2.3, 3 V	2.5, 3.3 V	SDR	FBGA	有	333 MHz	SDR	Details	NBT SRAM	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8162Z36DGB				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mb			Industrial							SRAM
GS8342TT38BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT38BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		725 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8160E32DGT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				250 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	4		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342D11BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	有	GS8342D11BGD-400	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.21	BGA	Commercial grade	400 MHz	FBGA	0 to 85 °C	Tray	GS8342D11BGD			3A991.B.2.B	SigmaQuad-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	705 mA		Pipelined	4 M x 9	3-STATE	1.4 mm	9	20 Bit	SRAM	36 Mbit	0.225 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342T20BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342T20BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		575 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342D18BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	0.45 ns	70 °C	无	GS8342D18BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.34	BGA	Commercial grade	350 MHz	FBGA	QDR	0 to 85 °C	Tray	GS8342D18BD			3A991.B.2.B	SigmaQuad-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	665 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit	0.22 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342S09BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	表面贴装	1.9 V	9 Bit	4 MWords	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342S09BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		540 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS816218DGB-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS816218DGB-200V	1.8 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	Commercial grade	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	0 to 85 °C	Tray	GS816218DGB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18		SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	22 mm	14 mm
GS8162Z18DGB-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS8162Z18DGB-150I	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Industrial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	-40 to 100 °C	Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS816236DB-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 85 C	3.6 V	- 40 C	21	2.3 V	SMD/SMT	-40 to 100 °C	Tray	GS816236DB				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8162Z36DD-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Industrial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8162Z36DD				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		260 mA, 330 mA	5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8161E18DGT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	QFP,	FLATPACK	1000000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS8161E18DGT-250V	1.8 V	QFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	QFP	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	0 to 70 °C	Tray	GS8161E18DGT			3A991.B.2.B	DCD Pipeline/Flow Through		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1		compliant	R-PQFP-G100			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18			18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM
GS8342R09BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342R09BGD				SigmaDDR-II B4				Memory & Data Storage												36 Mbit	1		460 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342T08BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T08BD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		600 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8160E32DGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				200 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 100 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	4		225 mA, 230 mA	6.5 ns		512 k x 32					SRAM	18 Mbit			Industrial							SRAM
GS8161E18DGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	Synchronous	1.7, 2.3 V	1.8, 2.5 V	SDR	FBGA	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	有	GS8161E18DGD-200IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	BGA	Industrial grade	表面贴装	2, 2.7 V	18 Bit	1 MWords	-40 to 85 °C	Tray	GS8161E18DGD			3A991.B.2.B	DCD Pipeline/Flow Through		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	210 mA, 215 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18		SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	15 mm	13 mm