GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	时间@峰值回流温度-最大值(s)	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度
GS8161Z36DD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	0 to 85 °C	Tray	GS8161Z36DD				NBT				Memory & Data Storage													18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342T19BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T19BGD				SigmaDDR-II+ B2				Memory & Data Storage													36 Mbit	1		515 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816132DD-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 85 °C	Tray	GS816132DD				同步突发				Memory & Data Storage													18 Mbit	4		225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8161Z36DD-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	FBGA	1.8, 2.5 V	1.7, 2.3 V	36 Bit	2, 2.7 V	有	333 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR				200@Flow-Through/333@Pipelined MHz	-40 to 100 °C	Tray	GS8161Z36DD				NBT				Memory & Data Storage													18 Mbit			260 mA, 330 mA	5@Flow-Through/3@Pip		512 k x 36				19 Bit	SRAM			18								SRAM
GS816018DGT-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 100 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	7.5 ns	85 °C	有	GS816018DGT-150IV	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.32	QFP	Industrial grade	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	-40 to 100 °C	Tray	GS816018DGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant		R-PQFP-G100			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18		1.6 mm	18		SRAM	18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS88118CGT-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP,	FLATPACK, LOW PROFILE	512000	UNSPECIFIED	未说明	70 °C	有	GS88118CGT-150	3.3 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.28	QFP	Commercial grade	133.3@Flow-Through/150@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	0 to 70 °C	Tray	GS88118CGT			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant		R-XQFP-G100	不合格		COMMERCIAL	9 Mbit	1	SYNCHRONOUS	120 mA, 130 mA	7.5 ns	Flow-Through/Pipelined	512 k x 18		1.6 mm	18	19 Bit	SRAM	9 Mbit		9437184 bit	Commercial	SERIAL		缓存SRAM		3.6 V	3 V	SRAM	20 mm	14 mm
GS8342DT37BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342DT37BGD				SigmaQuad-II+ B4				Memory & Data Storage													36 Mbit	2		850 mA		Pipelined	1 M x 36				18 Bit	SRAM	36 Mbit			Commercial							SRAM
GS816236DGB-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	BGA,	网格排列	512000	PLASTIC/EPOXY	未说明	5.5 ns	70 °C	有	GS816236DGB-250	524288 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.25	BGA	有	250 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS816236DGB			3A991.B.2.B	Pipeline/Flow Through		ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant		R-PBGA-B119			COMMERCIAL	18 Mbit		SYNCHRONOUS	230 mA, 250 mA	5.5 ns		512 k x 36		1.99 mm	36		SRAM			18874368 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342T11BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342T11BGD				SigmaQuad-II+				Memory & Data Storage													36 Mbit	1		610 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS832136AD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	6.5 ns	85 °C	无	GS832136AD-200	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	0 to 85 °C	Tray	GS832136AD			3A991.B.2.B	Pipeline/Flow Through		PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant		R-PBGA-B165	不合格	2.5/3.3 V	OTHER	36 Mbit	4	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS816236DB-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	21	1.7 V	0 to 85 °C	Tray	GS816236DB				Pipeline/Flow Through				Memory & Data Storage													18 Mbit	4		205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342TT06BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT06BD				SigmaQuad-II+				Memory & Data Storage													36 Mbit	1		600 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342S08BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342S08BD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	250 MHz	FBGA	-40 to 100 °C	Tray	GS8342S08BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	470 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	0.195 A	33554432 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342TT10BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342TT10BGD				SigmaDDR-II+ B2				Memory & Data Storage													36 Mbit	1		450 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8160Z18DGT-250V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	TQFP-100	YES	100	100	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	SDR	Details	NBT SRAM	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	18	0 C	2.7 V	+ 85 C	250 MHz	有	LQFP,	FLATPACK, LOW PROFILE	1000000	PLASTIC/EPOXY	5.5 ns	70 °C	有	GS8160Z18DGT-250V	1.8 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.31	QFP	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	0 to 85 °C	Tray	GS8160Z18DGT			3A991.B.2.B	NBT		ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	未说明	1	0.65 mm	compliant	未说明	R-PQFP-G100			COMMERCIAL	18 Mbit	2	SYNCHRONOUS	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18		1.6 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	20 mm	14 mm
GS8322Z18AGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	18 Bit	2.7, 3.6 V	表面贴装	200 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	BGA, BGA119,7X17,50	网格排列	3	2000000	PLASTIC/EPOXY	BGA119,7X17,50	未说明	6.5 ns	70 °C	有	GS8322Z18AGB-200	200 MHz	2.5 V	BGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.13	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	0 to 85 °C			e1	有	3A991.B.2.B		Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant		R-PBGA-B119	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit		36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V		22 mm	14 mm
GS8342S36BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	SigmaSIO-II	Details	DDR	GSI技术	GSI技术	Parallel	SMD/SMT	1.7 V	15	- 40 C	1.9 V	+ 85 C	300 MHz	有	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342S36BGD-300I	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.2	BGA	Industrial grade	300 MHz	-40 to 100 °C	Tray	GS8342S36BGD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	685 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.21 A	37748736 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8160E32DGT-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				150 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage													18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342T09BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II	DDR	Industrial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342T09BD				SigmaDDR-II B2				Memory & Data Storage													36 Mbit	1		405 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8321E18AD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	0 to 85 °C	Tray	GS8321E18AD				DCD Pipeline/Flow Through				Memory & Data Storage													36 Mbit	2		215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18					SRAM	36 Mbit			Commercial							SRAM
GS8342QT37BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	DDR	Industrial grade				250 MHz	FBGA	1.8000 V	1.7 V	Synchronous	36 Bit	1.9 V	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	-40 to 100 °C	Tray	GS8342QT37BGD				SigmaQuad-II+ B2				Memory & Data Storage													36 Mbit			775 mA	0.45		1 M x 36				19 Bit	SRAM			36	Industrial							SRAM
GS8342D37BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	333 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				333 MHz	FBGA	QDR	0 to 85 °C																							36 Mbit	2		775 mA		Pipelined	1 M x 36				18 Bit		36 Mbit			Commercial
GS8342DT19BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaQuad-II+	Details	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	Synchronous	2 MWords	18 Bit	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	-40 to 100 °C	Tray	GS8342DT19BGD				SigmaQuad-II+ B4				Memory & Data Storage													36 Mbit	2		615 mA		Pipelined	2 M x 18					SRAM	36 Mbit			Industrial							SRAM
GS816118DGD-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	表面贴装	250 MHz	+ 100 C	2.7 V	- 40 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	5.5 ns	85 °C	有	GS816118DGD-250IV	1.8 V	LBGA	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.26	BGA	Industrial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	-40 to 100 °C		GS816118DGD			3A991.B.2.B			ALSO OPERATES AT 2.5V	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant		R-PBGA-B165			INDUSTRIAL	18 Mbit	2	SYNCHRONOUS	225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18		1.4 mm	18	20 Bit		18 Mbit		18874368 bit	Industrial	PARALLEL		缓存SRAM		2 V	1.7 V		15 mm	13 mm
GS832236AD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	0 to 85 °C	Tray	GS832236AD				Pipeline/Flow Through				Memory & Data Storage													36 Mbit	4		230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial							SRAM