N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342Q09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342T36BGD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Tray

GS8342T36BGD

3A991.B.2.B

SigmaDDR-II B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

585 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.185 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0.324050 oz

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

5.5 ns

70 °C

有

GS8322Z36AGD-250

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.57

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

0 to 85 °C

Tray

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342S18BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

0 to 85 °C

Tray

GS8342Q18BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

2 M x 18

SRAM

36 Mb

Commercial

SRAM

N/A

-

12 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0.033210 oz

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

有

GS832032AGT-150I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.71

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS832032AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342T09BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

450 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342T20BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

670 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

7 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7 ns

70 °C

有

GS840Z18CGT-166

166 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

QFP

Commercial grade

143@Flow-Through/166@Pipelined MHz

TQFP

SDR

0 to 85 °C

Tray

GS840Z18CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

4 Mbit

2

SYNCHRONOUS

125 mA, 140 mA

7 ns

Flow-Through/Pipelined

256 k x 18

3-STATE

1.6 mm

18

18 Bit

SRAM

4 Mbit

0.025 A

4718592 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

3.14 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

15

0 C

1.9 V

+ 70 C

333 MHz

有

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

DDR

N

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

0 to 85 °C

Tray

GS8342Q36BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

1.055 A

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

+ 70 C

350 MHz

有

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

SMD/SMT

Parallel

GSI技术

GSI技术

1.7 V

15

0 C

1.9 V

0 to 85 °C

Tray

GS8342DT06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8160Z36DGT-150V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 85 °C

Tray

GS8160Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8342T06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

670 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS8160Z36DGT

NBT

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 85 °C

Tray

GS816136DD

同步突发

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672Q38BE-450

450 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Tray

GS8672Q38BE

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

COMMERCIAL

72 Mbit

SYNCHRONOUS

2.05 A

2 M x 36

3-STATE

1.4 mm

36

SRAM

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

- 40 C

1.9 V

+ 85 C

300 MHz

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

DDR

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

-40 to 85 °C

Tray

GS8182Q09BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

810 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q18BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

895 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS832132AGD-200I

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS832132AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

0 to 70 °C

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS816118DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

860 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z36AD-150

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 85 °C

Tray

GS8321Z36AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm