N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

有

GS8321Z36AGD-150I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.59

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 100 °C

Tray

GS8321Z36AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

210 mA, 220 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5.5 ns

85 °C

有

GS832132AGD-250I

250 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

-40 to 100 °C

Tray

GS832132AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

250 mA, 305 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

565 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

QDR-II

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

0 C

1.9 V

+ 70 C

300 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

BGA

5.06

GSI TECHNOLOGY

不推荐

RECTANGULAR

LBGA

1.8 V

GS81302DT37GE-300

有

70 °C

Commercial grade

300 MHz

FBGA

QDR

0 to 85 °C

Tray

GS81302DT37GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

915 mA

Pipelined

4 M x 36

1.5 mm

36

20 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

100

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Industrial grade

-40 to 85 °C

4

Flow-Through/Pipelined

19 Bit

18 Mbit

Industrial

N/A

-

TQFP-100

100

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

36 Bit

2, 2.7 V

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

205 mA, 210 mA

6.5@Flow-Through/3@P

512 k x 36

19 Bit

SRAM

18

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

4 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D11BD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

0 to 85 °C

Tray

GS8342D11BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342R08BGD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

460 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342S08BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

333 MHz

FBGA

-40 to 100 °C

Tray

GS8342S08BD

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

615 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.215 A

33554432 bit

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182D08BD-200I

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

Tray

GS8182D08BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

365 mA

2 M x 8

1.4 mm

8

SRAM

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182Q18BGD

SigmaQuad-II

Memory & Data Storage

18 Mbit

2

860 mA

Pipelined

1 M x 18

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

BGA,

网格排列

3

256000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS882Z36CGB-200

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.6

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Tray

GS882Z36CGB

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161E18DGD-150IV

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

-40 to 85 °C

GS8161E18DGD

3A991.B.2.B

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

150 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

GS832218AD

36 Mbit

2

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

N/A

-

10 Weeks

TQFP-100

YES

100

100

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8160E32DGT-200I

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

QFP

有

200 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Tray

GS8160E32DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8321Z18AGD-150

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

0 to 85 °C

GS8321Z18AGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8162Z36DGD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8162Z36DGD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

36 Bit

1.9 V

表面贴装

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS8342DT37BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.89

BGA

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

675 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

TQFP-100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

333 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/333@Pipelined MHz

TQFP

SDR

0 to 70 °C

18 Mbit

4

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI技术

GSI技术

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D09BGD-333I

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

BGA

SigmaQuad-II

Details

DDR

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

525 mA

2 M x 9

1.4 mm

9

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

2.3 V

18

0 C

3.6 V

+ 85 C

200 MHz

有

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

表面贴装

2, 2.7 V

36 Bit

512 kWords

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS816036DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

2.3 V

18

0 C

3.6 V

+ 70 C

150 MHz

有

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

Details

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8321Z36AGD

NBT

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

9 Mbit

2

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

9 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

36 Bit

1 MWords

Synchronous

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

7.5 ns

70 °C

有

GS8322Z36AGD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.12

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

表面贴装

2.7, 3.6 V

0 to 85 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

10 Weeks, 3 Days

YES

100

100

未说明

6.5 ns

85 °C

有

GS816036DGT-200IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

-40 to 100 °C

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

512KX36

1.6 mm

36

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm