N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Bulk

GS8342T36BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

735 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

- 40 C

1.7 V

SMD/SMT

Parallel

Compliant

375 MHz

+ 85 C

1.9 V

Bulk

100 °C

-40 °C

1.8 V

72 Mbit

2

1.04 A

4 M x 18

22 b

72 Mb

72

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

85 °C

无

GS8321E18AD-200

200 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 85 °C

Bulk

GS8321E18AD

e0

无

3A991.B.2.B

DCD Pipeline/Flow Through

锡铅

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

167 MHz

+ 70 C

1.9 V

0 C

18

Tray

GS8182S09BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

315 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS88036

活跃

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

5 ns

85 °C

有

GS88036CGT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.66

QFP

Industrial grade

200@Flow-Through/300@Pipelined MHz

-40 to 85 °C

Tray

GS88036CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

300 MHz

185 mA, 245 mA

5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

-

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

256K x 36

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (15x13)

165

Details

DDR

Tray

GSI Technology Inc.

GS8182D18

活跃

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D18BGD-300I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.65

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

-40°C ~ 85°C (TA)

Tray

GS8182D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous

1.7V ~ 1.9V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

300 MHz

495 mA

SRAM

Parallel

1 M x 18

1.4 mm

18

-

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

1M x 18

15 mm

13 mm

N/A

-

表面贴装

100-LQFP

100

100-TQFP (20x14)

GSI Technology Inc.

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Tray

GS832018

活跃

Volatile

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

-40 to 100 °C

-

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

36Mbit

2

250 MHz

235 mA, 275 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 18

-

21 Bit

36 Mbit

Industrial

2M x 18

N/A

-

10 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS816136DD-250

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Compliant

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

Bulk

GS816136DD

3A991.B.2.B

Pipeline/Flow Through

70 °C

0 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

512 k x 36

1.4 mm

36

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

Compliant

有

450 MHz

+ 70 C

1.9 V

QDR-II

SigmaQuad-II+

Tray

GS8672Q37BE

SigmaQuad-II+

70 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

2.05 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

1.7 V

18

0 C

2.7 V

+ 85 C

200 MHz

有

Commercial grade

200 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8160E18DGT

DCD Synchronous Burst

Memory & Data Storage

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

375 MHz

+ 85 C

1.9 V

- 40 C

15

Bulk

GS8672T19BE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.04 A

4 M x 18

22 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

70 °C

有

GS880F18CGT-6.5

153 MHz

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Compliant

有

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS880F18CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

70 °C

0 °C

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

130 mA

6.5 ns

512 k x 18

3-STATE

1.6 mm

18

18 b

SRAM

9 Mb

0.025 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

Bulk

GS8672T20BE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.09 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

0 C

18

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

7.5 ns

70 °C

GS8161Z18DGD-150V

LBGA

RECTANGULAR

GSI TECHNOLOGY

FBGA

1.8, 2.5 V

Synchronous

Compliant

2.7 V

1.7 V

NBT SRAM

未说明

有

1.8 V

活跃

5.26

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

SDR

1.7, 2.3 V

1 MWords

18 Bit

0 to 85 °C

Bulk

GS8161Z18DGD

3A991.B.2.B

NBT

85 °C

0 °C

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8672Q19BE

SigmaQuad-II+

70 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.49 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

Bulk

GS8342T11BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

4 M x 9

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.38

QFP

Compliant

250 MHz

+ 85 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8160E36DGT-250

524288 words

1.8 V

Bulk

3A991.B.2.B

85 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

512 k x 36

1.6 mm

36

20 b

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

无

N/A

-

BGA-165

165

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

36 Mbit

Commercial

无

N/A

-

12 Weeks

BGA-165

YES

165

2000000

PLASTIC/EPOXY

0.45 ns

85 °C

GS8672Q36BE-400

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.84

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8672Q36BE

3A991.B.2.B

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

OTHER

72 Mbit

2

SYNCHRONOUS

1.86 A

2 M x 36

1.5 mm

36

20 b

SRAM

72 Mb

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

BGA-165

- 40 C

1.7 V

SMD/SMT

Parallel

Compliant

200 MHz

+ 85 C

1.9 V

Bulk

GS8672T36BGE

100 °C

-40 °C

1.8 V

72 Mbit

1

920 mA

2 M x 36

21 b

72 Mb

72

无

N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

Compliant

150 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816118DGD-150IV

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

-40 to 100 °C

Bulk

GS816118DGD

3A991.B.2.B

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

Tray

GS8672Q19BE

SigmaQuad-II+

85 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.51 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

TQFP-100

100

表面贴装

2.7, 3.6 V

36 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

250 MHz

Compliant

250 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

-40 to 85 °C

GS8160E36DGT

18 Mbit

4

245 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

N/A

-

10 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8160E32DGT-200I

524288 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.39

QFP

有

200 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS8160E32DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8321Z18AGD-150

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

150 MHz

0 to 85 °C

GS8321Z18AGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm