GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																															操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS8321Z36AGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	0.345916 oz	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	6.5 ns	85 °C	有	GS8321Z36AGD-200IV	200 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	4.61	BGA	Industrial grade	-40 to 100 °C	Tray	GS8321Z36AGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.8/2.5 V	INDUSTRIAL	36 Mbit	4	SYNCHRONOUS	235 mA, 270 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	ZBT SRAM	1.7 V	2 V	1.7 V	SRAM	15 mm	13 mm
GS8182S36BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	RECTANGULAR	GSI技术	活跃	GSI TECHNOLOGY	5.15	BGA	250 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	LBGA,	GRID ARRAY, LOW PROFILE	512000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS8182S36BD-250I	524288 words	1.8 V	LBGA				e0	无	3A991.B.2.B		Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41		CMOS	BOTTOM	BALL	未说明	1	1 mm	not_compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS	525 mA			512 k x 36		1.4 mm	36					18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V		15 mm	13 mm
GS8342T08BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	GSI技术	GSI技术	SigmaCIO DDR-II	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	-40 to 100 °C	Tray	GS8342T08BD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		575 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342R18BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342R18BGD				SigmaDDR-II B4				Memory & Data Storage												36 Mbit	1		575 mA		Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342S09BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8342S09BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		530 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8342T09BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	GSI技术	GSI技术	SigmaDDR-II	DDR	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	-40 to 100 °C	Tray	GS8342T09BD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		460 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342T09BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342T09BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Commercial grade	350 MHz	FBGA	DDR	0 to 85 °C	Tray	GS8342T09BD			3A991.B.2.B	SigmaDDR-II B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	565 mA		Pipelined	4 M x 9	3-STATE	1.4 mm	9	21 Bit	SRAM	36 Mbit	0.21 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8182Q08BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	8 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 85 °C	Tray	GS8182Q08BGD				SigmaQuad-II				Memory & Data Storage												18 Mbit	2		810 mA		Pipelined	2 M x 8				20 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8342Q09BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	Synchronous	4 MWords	9 Bit	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342Q09BGD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	1.77	BGA	Industrial grade	250 MHz	FBGA	QDR	1.8000 V	-40 to 100 °C	Tray	GS8342Q09BGD			3A991.B.2.B	SigmaQuad-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	675 mA	450 ps	Pipelined	4 M x 9	3-STATE	1.4 mm	9	21 Bit	SRAM	36 Mbit	0.215 A	37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8161E18DGT-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	0 to 70 °C	Tray	GS8161E18DGT				DCD Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		190 mA, 195 mA	6.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342S08BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342S08BGD				SigmaSIO DDR-II				Memory & Data Storage												36 Mbit	2		675 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS832218AGD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				133@Flow-Through/150@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	-40 to 100 °C	Tray	GS832218AGD				Pipeline/Flow Through				Memory & Data Storage												36 Mbit	2		195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS882Z18CD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	300 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				200@Flow-Through/300@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 70 °C		GS882Z18CD																				9 Mbit	2		150 mA, 205 mA	5 ns	Flow-Through/Pipelined	512 k x 18				18 Bit		9 Mbit			Commercial
GS8672T19BE-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8672T19BE-400I	400 MHz	4194304 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.92	BGA	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	LBGA, BGA165,11X15,40		Tray	GS8672T19BE			3A991.B.2.B	SigmaDDR-II+ B2			8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5,1.8 V	INDUSTRIAL	72 Mbit		SYNCHRONOUS	1.09 A			4 M x 18	3-STATE	1.5 mm	18		SRAM			72		PARALLEL	COMMON	标准SRAM	1.7 V	1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8322Z18AGB-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	-40 to 100 °C		GS8322Z18AGB																				36 Mbit	2		235 mA, 275 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit		36 Mbit			Industrial
GS8342S36BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342S36BD-400	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	400 MHz	FBGA	DDR	0 to 85 °C	Tray	GS8342S36BD			3A991.B.2.B	SigmaSIO DDR-II		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	905 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.225 A	37748736 bit	Commercial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342Q08BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Industrial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342Q08BGD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		675 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8342T36BD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342T36BD-300I	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.2	BGA	Industrial grade	300 MHz	FBGA	DDR	-40 to 100 °C	Tray	GS8342T36BD			3A991.B.2.B	SigmaDDR-II B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	1	SYNCHRONOUS	580 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.195 A	37748736 bit	Industrial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS816136DGD-150V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	GSI技术	SyncBurst	Details	SDR	Commercial grade				FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	0 to 85 °C	Tray	GS816136DGD				同步突发				Memory & Data Storage												18 Mbit	4		175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	512 k x 36					SRAM	18 Mbit			Commercial							SRAM
GS8342T36BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8342T36BD				SigmaDDR-II B2				Memory & Data Storage												36 Mbit	1		770 mA		Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS88237CGB-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-119	YES	119	119	BGA,	网格排列	3	256000	PLASTIC/EPOXY	未说明	2.7 ns	70 °C	有	GS88237CGB-200	262144 words	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	200 MHz	+ 70 C	3.6 V	0 C	42	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR		Tray	GS88237CGB	e1	有	3A991.B.2.B	SCD/DCD Pipeline	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1.27 mm	compliant	R-PBGA-B119	不合格		COMMERCIAL	9 Mbit		SYNCHRONOUS	170 mA			256 k x 36		1.77 mm	36		SRAM			9437184 bit		PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342Q37BGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				250 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	1 MWords	表面贴装	1.9 V	36 Bit	有	250 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	0 to 85 °C	Tray	GS8342Q37BGD				SigmaQuad-II+ B2				Memory & Data Storage												36 Mbit	2		765 mA		Pipelined	1 M x 36				19 Bit	SRAM	36 Mbit			Commercial							SRAM
GS832136AGD-150I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	7.5 ns	85 °C	有	GS832136AGD-150I	150 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.16	BGA	Industrial grade	133.3@Flow-Through/150@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS832136AGD			3A991.B.2.B	Pipeline/Flow Through		PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	4	SYNCHRONOUS	210 mA, 220 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 Bit	SRAM	36 Mbit	0.04 A	37748736 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8321Z32AD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	2.3, 3 V	Synchronous	1 MWords	32 Bit	2.7, 3.6 V	表面贴装	250 MHz	+ 70 C	3.6 V	0 C	2.3 V	SMD/SMT	Parallel	Commercial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C																						36 Mbit	4		230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit		36 Mbit			Commercial
GS8342Q18BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	300 MHz	+ 70 C	1.9 V	0 C	1.7 V	SMD/SMT	Parallel	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	0 to 85 °C		GS8342Q18BD																				36 Mbit	2		775 mA		Pipelined	2 M x 18				20 Bit		36 Mbit			Commercial