N/A

-

10 Weeks

BGA-165

YES

165

165

2, 2.7 V

表面贴装

Compliant

333 MHz

+ 100 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5 ns

85 °C

有

GS816118DGD-333IV

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

-40 to 100 °C

Bulk

3A991.B.2.B

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

无

N/A

-

12 Weeks

BGA-165

YES

165

165

SigmaQuad-II

Details

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8672Q18BGE-300I

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.43

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8672Q18BGE

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

1.12 A

4 M x 18

3-STATE

1.5 mm

18

21 b

SRAM

72 Mb

75497472 bit

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

7.5 ns

85 °C

无

GS832118AD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS832118AD

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS816236DD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

-40 to 100 °C

Tray

GS816236DD

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T37BE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.2 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

18

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 70 °C

Tray

GS8182Q08BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

800 mA

Pipelined

2 M x 8

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

无

GS8182Q36BD-133I

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

133 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Tray

GS8182Q36BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

425 mA

512 k x 36

1.4 mm

36

18 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaSIO-II

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342S09BGD

SigmaSIO DDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

615 mA

Pipelined

4 M x 9

21 b

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

9 Bit

4 MWords

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q09BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

885 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342R08BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

300 MHz

-40 to 100 °C

Tray

GS8342R08BD

e0

3A991.B.2.B

SigmaDDR-II B4

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.195 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

DDR

SigmaDDR-II

GSI技术

GSI技术

Compliant

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T36BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

670 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D18BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

605 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

FBGA

1.8000 V

1.7 V

Synchronous

1.9 V

18 Bit

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

DDR

Details

SigmaCIO DDR-II

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342R18BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

525 mA

0.45

2 M x 18

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

表面贴装

1.9 V

36 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T36BGD

SigmaDDR-II B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

725 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Commercial grade

250 MHz

表面贴装

1.9 V

36 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342R36BGD

SigmaDDR-II B4

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

21

1.7 V

-40 to 100 °C

Tray

GS816218DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

250 MHz

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

-40 to 100 °C

Tray

GS8342Q07BGD

SigmaQuad-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

675 mA

0.45

4 M x 8

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182D36BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

595 mA

512 k x 36

17 b

SRAM

18 Mb

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342DT37BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

-40 to 100 °C

Tray

GS8342DT37BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

100 °C

-40 °C

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

685 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342S08BGD-250

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

250 MHz

FBGA

0 to 85 °C

Tray

GS8342S08BGD

3A991.B.2.B

SigmaSIO DDR-II

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.185 A

33554432 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182S36BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

595 mA

Pipelined

512 k x 36

18 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

85 °C

有

GS8321Z18AGD-200

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 85 °C

Tray

GS8321Z18AGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mb

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8161E36DGT

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 b

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8160Z18DGT-200V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS8160Z18DGT

3A991.B.2.B

NBT

85 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无