N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D18BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320E36AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

0 to 85 °C

Tray

GS8342S36BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

675 mA

0.45

1 M x 36

19 Bit

SRAM

36

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D08BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D06BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

400 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8342D06BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

705 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.225 A

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS8342DT37BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA, BGA119,7X17,50

网格排列

3

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

有

GS832236AGB-200I

200 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

-40 to 100 °C

Tray

GS832236AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS8161Z36DGT-150IV

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

-40 to 100 °C

GS8161Z36DGT

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

18 Mb

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

表面贴装

1.9 V

9 Bit

4 MWords

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q09BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

200 MHz

有

200 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q07BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

565 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

250 MHz

FBGA

QDR

-40 to 100 °C

GS8342D08BGD

36 Mbit

2

470 mA

Pipelined

4 M x 8

20 Bit

36 Mbit

Industrial

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342R08BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

525 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS816136DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

250 mA, 270 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D37BGD-300I

300 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18 Mbit

SYNCHRONOUS

545 mA

512 k x 36

3-STATE

1.4 mm

36

SRAM

0.165 A

18874368 bit

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Details

SyncBurst

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8321E32AGD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

36 Mbit

2

775 mA

Pipelined

1 M x 36

18 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D19BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

540 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

有

SDR

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

- 40 C

3.6 V

+ 85 C

250 MHz

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

5.5 ns

85 °C

无

GS832132AD-250I

250 MHz

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

181.8@Flow-Through/250@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

-40 to 100 °C

Tray

GS832132AD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

250 mA, 305 mA

5.5@Flow-Through/2.5

1 M x 32

3-STATE

1.4 mm

32

SRAM

0.04 A

36

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

- 40 C

2.3 V

SMD/SMT

Parallel

QFP

5.34

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LQFP

2.5 V

GS832018AGT-200I

有

6.5 ns

未说明

PLASTIC/EPOXY

2000000

FLATPACK, LOW PROFILE

LQFP,

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 85 C

3.6 V

-40 to 100 °C

3A991.B.2.B

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

1.6 mm

18

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 C

1.9 V

+ 70 C

350 MHz

有

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA

5.21

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

350 MHz

GS8342D11BGD-350

有

70 °C

0.45 ns

未说明

BGA165,11X15,40

Commercial grade

350 MHz

FBGA

0 to 85 °C

Tray

GS8342D11BGD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

SRAM

36 Mbit

0.22 A

37748736 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

530 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Synchronous

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

表面贴装

9 Bit

4 MWords

0 to 85 °C

36 Mbit

2

885 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM