N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 85 °C

Tray

GS8161E18DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS8321E36AGD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

QFP,

FLATPACK

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS816136DGT-200

524288 words

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

QFP

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

200 MHz

有

Tray

GS816136DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

210 mA

6.5 ns

512 k x 36

36

SRAM

18

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

2.3 ns

70 °C

有

GS88037CGT-250

250 MHz

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.61

QFP

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS88037CGT

e3

有

3A991.B.2.B

Pipeline

纯哑光锡

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

SYNCHRONOUS

195 mA

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.025 A

9437184 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D09BD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

YES

100

100

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS841Z18CGT-150

150 MHz

262144 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.52

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS841Z18CGT

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

4 Mbit

SYNCHRONOUS

120 mA, 130 mA

7.5 ns

256 k x 18

3-STATE

1.6 mm

18

SRAM

0.025 A

4718592 bit

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D19BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

615 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8162Z18DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342R09BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

405 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 100 °C

36 Mbit

2

235 mA, 275 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

N/A

-

8 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

7.5 ns

85 °C

无

GS832136AD-150

150 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS832136AD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

350 MHz

有

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

DDR

Details

SigmaDDR-II+

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8342TT07BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

565 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS8322Z36AGB

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

215 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

85 °C

无

GS8162Z18DD-200

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.7

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS8162Z18DD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

18 Mbit

SYNCHRONOUS

195 mA

6.5 ns

1 M x 18

1.4 mm

18

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182S08BD-250

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Commercial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

0 to 70 °C

Tray

GS8182S08BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

420 mA

Pipelined

2 M x 8

1.4 mm

8

20 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT07BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

515 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

表面贴装

2, 2.7 V

32 Bit

有

200 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS816132DGD

同步突发

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

9 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8342Q09BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

7.5 ns

85 °C

无

GS8322Z18AB-150I

150 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8322Z18AB

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302DT37E

SigmaQuad-II+ B4

Memory & Data Storage

114 Mbit

2

1.065 A

Pipelined

4 M x 36

20 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

400 MHz

有

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

DDR

Details

SigmaCIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8342R09BGD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS816036DGT-150V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

0 to 85 °C

Tray

GS816036DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

180 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

133.3@Flow-Through/150@Pipelined MHz

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

85 °C

有

GS832036AGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

QFP

Commercial grade

表面贴装

2.7, 3.6 V

36 Bit

1 MWords

0 to 85 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm