N/A

-

8 Weeks

BGA-119

YES

119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

表面贴装

2.7, 3.6 V

36 Bit

1 MWords

Synchronous

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

1000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

无

GS832236AB-200I

200 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

-40 to 100 °C

Tray

GS832236AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.99 mm

36

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

165

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Commercial grade

0 to 70 °C

2

Pipelined

18 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

0 to 85 °C

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Commercial

N/A

-

BGA-119

119

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 100 °C

GS816236DB

18 Mbit

4

250 mA, 270 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161Z18DD-200V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8161Z18DD

3A991.B.2.B

NBT

FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS8320E18AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS8161Z36DGD-250

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342D10BGD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

615 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342D36BD-333I

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

333 MHz

FBGA

-40 to 100 °C

Tray

GS8342D36BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

785 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

18 Bit

SRAM

36 Mbit

0.215 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

N

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672D18BE-200

200 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.91

BGA

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8672D18BE

3A991.B.2.B

SigmaQuad-II

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

SYNCHRONOUS

850 mA

4 M x 18

3-STATE

1.5 mm

18

SRAM

72

PARALLEL

SEPARATE

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342DT10BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

605 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

12 Weeks

YES

165

165

-40 °C

未说明

7.5 ns

85 °C

无

GS8162Z36DD-150I

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.25

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 to 100 °C

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through/Pipelined

512KX36

1.4 mm

36

19 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

0 to 85 °C

Tray

GS816236DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

表面贴装

1.9 V

8 Bit

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342DT06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342R18BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

565 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672D38BE-400I

400 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS8672D38BE

3A991.B.2.B

SigmaQuad-II+ B4

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

1.88 A

2 M x 36

3-STATE

1.5 mm

36

SRAM

72

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

4000000

PLASTIC/EPOXY

-40 °C

0.45 ns

85 °C

GS8672D19BE-400I

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.84

BGA

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8672D19BE

3A991.B.2.B

SigmaQuad-II+

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

SYNCHRONOUS

1.38 A

4 M x 18

1.5 mm

18

SRAM

72

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342DT11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8342Q07BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8161E32DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342QT10BGD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

SDR

+ 85 C

3.6 V

- 40 C

-40 to 100 °C

Tray

GS832218AGB

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q08BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

BGA

Industrial grade

250 MHz

FBGA

-40 to 100 °C

Tray

GS8342Q08BD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

675 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.215 A

33554432 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

6.5 ns

70 °C

GS8162Z36DD-200

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

BGA

200 MHz

+ 70 C

0 C

SMD/SMT

Parallel

FBGA

2.5, 3.3 V

Synchronous

未说明

无

2.5 V

5.25

3.6 V

2.3 V

Commercial grade

SDR

2.3, 3 V

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

0 to 85 °C

GS8162Z36DD

3A991.B.2.B

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

Flow-Through/Pipelined

512KX36

1.4 mm

36

18 Mb

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS880F36CGT

流过

Memory & Data Storage

9 Mbit

4

155 mA

5.5 ns

Flow-Through

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM