GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	最高工作温度	最小工作温度	附加功能	HTS代码	子类别	技术	电压 - 供电	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS8161E36DGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8161E36DGD				DCD Pipeline/Flow Through						Memory & Data Storage													18 Mbit	4		225 mA, 230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8182Q36BGD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Details	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	512000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS8182Q36BGD-200I	524288 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	200 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II		Tray	GS8182Q36BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)			流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	18 Mbit		SYNCHRONOUS	570 mA			512 k x 36		1.4 mm	36		SRAM			18874368 bit		PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8182Q36BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	512 kWords	36 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8182Q36BGD				SigmaQuad-II						Memory & Data Storage													18 Mbit	2		935 mA		Pipelined	512 k x 36				18 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8322Z36AGB-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	250 MHz	+ 85 C	3.6 V	- 40 C	2.3 V	SMD/SMT	Parallel	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	-40 to 100 °C		GS8322Z36AGB																							36 Mbit	4		250 mA, 305 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit		36 Mbit			Industrial
GS8182S36BGD-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO DDR-II	Details	DDR	Commercial grade				375 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	512 kWords	36 Bit	1.9 V	表面贴装	有	375 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	0 to 70 °C	Tray	GS8182S36BGD				SigmaSIO DDR-II						Memory & Data Storage													18 Mbit	2		855 mA		Pipelined	512 k x 36				18 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8342D36BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	GSI技术	GSI技术	SigmaQuad-II	N	DDR	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	0.45 ns	70 °C	无	GS8342D36BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	350 MHz	FBGA	QDR	0 to 85 °C	Tray	GS8342D36BD			3A991.B.2.B	SigmaQuad-II				流水线结构	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	850 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	18 Bit	SRAM	36 Mbit	0.22 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS88132CGT-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	SDR	Details	SyncBurst	GSI技术	Commercial grade				200@Flow-Through/300@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C	Tray	GS88132CGT				Pipeline/Flow Through						Memory & Data Storage													9 Mbit	1		165 mA, 225 mA	5 ns	Flow-Through/Pipelined	256 k x 36				17 Bit	SRAM	9 Mbit			Commercial							SRAM
GS8321E32AGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	32 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	0 to 85 °C	Tray	GS8321E32AGD				DCD Pipeline/Flow Through						Memory & Data Storage													36 Mbit	4		205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS8321E36AGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	0 to 85 °C	Tray	GS8321E36AGD				DCD Pipeline/Flow Through						Memory & Data Storage													36 Mbit	4		205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial							SRAM
GS881Z18CGT-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	SDR	LQFP,	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	未说明	7.5 ns	70 °C	有	GS881Z18CGT-150	524288 words	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.51	QFP	Compliant	有	150 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM		Tray	GS881Z18CGT	e3	有	3A991.B.2.B	NBT Pipeline/Flow Through	Matte Tin (Sn)	70 °C	0 °C	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		COMMERCIAL	9 Mbit	1	SYNCHRONOUS	120 mA, 130 mA	7.5 ns		512 k x 18		1.6 mm	18	18 b	SRAM	9 Mb		9437184 bit		PARALLEL		ZBT SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm	无
GS8342R09BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342R09BGD				SigmaDDR-II B4		85 °C	0 °C			Memory & Data Storage		1.8 V											36 Mbit	1		565 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Commercial							SRAM			无
GS881E32CGT-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				153.8@Flow-Through/200@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	32 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	72	2.3 V	0 to 70 °C	Tray	GS881E32CGT				DCD Pipeline/Flow Through		70 °C	0 °C			Memory & Data Storage													9 Mbit	4		140 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 32				18 Bit	SRAM	8 Mbit			Commercial							SRAM			无
GS8342S08BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165				350 MHz	FBGA	1.8000 V	1.7 V	Synchronous	8 Bit	1.9 V	Compliant	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	DDR	-40 to 100 °C	Bulk	GS8342S08BD				SigmaSIO DDR-II		100 °C	-40 °C			Memory & Data Storage		1.8 V											36 Mbit	2		675 mA	0.45		4 M x 8				21 b	SRAM	36 Mb		36								SRAM			无
GS8342R09BGD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Industrial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	9 Bit	1.9 V	表面贴装	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342R09BGD				SigmaDDR-II B4		100 °C	-40 °C			Memory & Data Storage		1.8 V											36 Mbit	1		575 mA		Pipelined	4 M x 9				20 Bit	SRAM	36 Mbit			Industrial							SRAM			无
GS8342T08BD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	DDR	Compliant	Industrial grade				250 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8342T08BD				SigmaDDR-II B2		100 °C	-40 °C			Memory & Data Storage		1.8 V											36 Mbit	1		405 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM			无
GS8342T36BD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				333 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	333 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T36BD				SigmaDDR-II B2		85 °C	0 °C			Memory & Data Storage		1.8 V											36 Mbit	1		660 mA		Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Commercial							SRAM			无
GS8342R36BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	DDR	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	Compliant	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	-40 to 100 °C	Bulk	GS8342R36BGD				SigmaDDR-II B4		100 °C	-40 °C			Memory & Data Storage		1.8 V											36 Mbit	1		580 mA		Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Industrial							SRAM			无
GS8342S36BGD-250I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	1 MWords	36 Bit	1.9 V	表面贴装	有	250 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342S36BGD-250I	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Industrial grade	250 MHz	-40 to 100 °C	Tray	GS8342S36BGD			3A991.B.2.B	SigmaSIO DDR-II		100 °C	-40 °C	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	1.8 V	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	685 mA		Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.195 A	37748736 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm	无
GS832236AGD-200	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	6.5 ns	70 °C	有	GS832236AGD-200	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	FBGA	SDR	0 to 85 °C	Tray	GS832236AGD	e1	有	3A991.B.2.B	Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	0 °C	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	205 mA, 240 mA	6.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36	20 b	SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm	无
GS832132AD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	32 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	6.5 ns	85 °C	无	GS832132AD-200I	200 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	1.67	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	-40 to 100 °C	Tray	GS832132AD			3A991.B.2.B	Pipeline/Flow Through		100 °C	-40 °C	PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit	4	SYNCHRONOUS	225 mA, 260 mA	6.5 ns	Flow-Through/Pipelined	1 M x 32	3-STATE	1.4 mm	32	20 Bit	SRAM	36 Mbit	0.04 A	33554432 bit	Industrial	PARALLEL	COMMON	缓存SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm	无
GS8342R18BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaCIO DDR-II	Details	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342R18BGD				SigmaDDR-II B4		85 °C	0 °C			Memory & Data Storage		1.8 V											36 Mbit	1		450 mA		Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Commercial							SRAM			无
GS8342S08BGD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaSIO-II	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342S08BGD-333I	333 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	333 MHz	-40 to 100 °C	Tray	GS8342S08BGD			3A991.B.2.B	SigmaSIO DDR-II		100 °C	-40 °C	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	1.8 V	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	615 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit	0.215 A	33554432 bit	Industrial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm	无
GS8342R18BD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	18 Bit	2 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	250 MHz	有	250 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342R18BD-250	250 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.35	BGA	Commercial grade	表面贴装	1.9 V	0 to 85 °C	Tray	GS8342R18BD	e0		3A991.B.2.B	SigmaDDR-II B4	Tin/Lead (Sn/Pb)	85 °C	0 °C	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	1.8 V	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	1	SYNCHRONOUS	395 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	21 Bit	SRAM	36 Mbit	0.175 A	37748736 bit	Commercial	PARALLEL	COMMON	DDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm	无
GS8672Q37BGE-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II					有	375 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel		Tray	GS8672Q37BGE				SigmaQuad-II+		100 °C	-40 °C			Memory & Data Storage		1.8 V											72 Mbit	2		1.78 A			2 M x 36				20 b	SRAM	72 Mb		72								SRAM			无
GS8161Z32DGD-200V	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	512 kWords	32 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 70 C	2.7 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	未说明	6.5 ns	70 °C	有	GS8161Z32DGD-200V	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	0 to 85 °C	Tray	GS8161Z32DGD			3A991.B.2.B	NBT		85 °C	0 °C	FLOW THROUGH AND PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V	8542.32.00.41	Memory & Data Storage	CMOS		BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			COMMERCIAL	18 Mbit	4	SYNCHRONOUS	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 32		1.4 mm	32	19 Bit	SRAM	18 Mbit		33554432 bit	Commercial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	15 mm	13 mm	无