N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342T18BD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

1

405 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

400 MHz

+ 70 C

3.6 V

0 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 85 °C

Tray

GS8162Z36DGB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

280 mA, 365 mA

4@Flow-Through/2.5@P

512 k x 36

SRAM

18

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161E18DD-200V

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

0 to 70 °C

Tray

GS8161E18DD

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

SYNCHRONOUS

190 mA, 195 mA

6.5@Flow-Through/3@P

1 M x 18

1.4 mm

18

SRAM

18

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T08BD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

BGA

Industrial grade

300 MHz

FBGA

-40 to 100 °C

Tray

GS8342T08BD

3A991.B.2.B

SigmaDDR-II B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.195 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

256000

UNSPECIFIED

-40 °C

未说明

85 °C

有

GS88132CGT-300I

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

QFP

Industrial grade

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 85 °C

Tray

GS88132CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

1.6 mm

32

17 Bit

SRAM

9 Mbit

8388608 bit

Industrial

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

1.7 V

15

0 C

1.9 V

+ 70 C

333 MHz

有

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

DDR

Details

SigmaSIO-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS8342S36BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

775 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

14 Weeks, 2 Days

TQFP-100

YES

100

100

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

TQFP

133.3 MHz

有

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS880F36CGT-7.5I

133 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.35

QFP

Industrial grade

表面贴装

-40 to 85 °C

Tray

GS880F36CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

150 mA

7.5 ns

Flow-Through

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

165

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Commercial grade

FBGA

SDR

1.8, 2.5 V

0 to 70 °C

4

Flow-Through/Pipelined

19 Bit

18 Mbit

Commercial

N/A

-

BGA-165

165

200@Flow-Through/333@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

36 Bit

2, 2.7 V

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

-40 to 100 °C

Tray

GS8162Z36DGD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

260 mA, 330 mA

5@Flow-Through/3@Pip

512 k x 36

19 Bit

SRAM

18

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

9 Bit

1.9 V

表面贴装

250 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

活跃

GSI TECHNOLOGY

5.35

BGA

GSI技术

RECTANGULAR

LBGA

1.8 V

250 MHz

GS8342D09BGD-250I

有

85 °C

0.45 ns

未说明

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

-40 to 100 °C

3A991.B.2.B

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

470 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

20 Bit

36 Mbit

0.195 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS8321E32AGD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS8162Z18DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342R08BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

525 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS816136DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

250 mA, 270 mA

5.5 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8182D37BGD-300I

300 MHz

524288 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

18 Mbit

SYNCHRONOUS

545 mA

512 k x 36

3-STATE

1.4 mm

36

SRAM

0.165 A

18874368 bit

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Details

SyncBurst

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8321E32AGD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT19BD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

450 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

0 to 85 °C

36 Mbit

2

775 mA

Pipelined

1 M x 36

18 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

860 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

705 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8182D08BD-200

2097152 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

200 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8182D08BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

355 mA

2 M x 8

1.4 mm

8

SRAM

16777216 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342TT07BGD-300I

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

300 MHz

-40 to 100 °C

Tray

GS8342TT07BGD

3A991.B.2.B

SigmaDDR-II+ B2

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

460 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mb

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8162Z36DD

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Synchronous

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

表面贴装

9 Bit

4 MWords

0 to 85 °C

36 Mbit

2

885 mA

Pipelined

4 M x 9

21 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT38BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

850 mA

Pipelined

1 M x 36

18 Bit

SRAM

36 Mbit

Commercial

SRAM