N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342DT20BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS882Z18CGD

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

2

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D09BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

675 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

表面贴装

1.9 V

9 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

400 MHz

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342DT11BGD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

715 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-119

119

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

Bulk

GS832218AB

85 °C

0 °C

36 Mbit

2

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

375 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8182D36BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

855 mA

Pipelined

512 k x 36

17 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS832132AD

Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

190 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 32

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

Tray

GS8182S08BD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

365 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T19BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

450 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS8322Z36AGB

NBT Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

633 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T20BE

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.52 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS88132CD

Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Compliant

200 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

GS8672Q36BGE

100 °C

-40 °C

1.8 V

72 Mbit

2

1.12 A

2 M x 36

20 b

72 Mb

72

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D08BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

605 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Compliant

167 MHz

+ 85 C

2.6 V

- 40 C

2.4 V

SMD/SMT

Parallel

GS8180QV36BD

85 °C

-40 °C

2.5 V

18 Mbit

2

512 k x 36

18 b

18 Mb

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

TQFP

181.8@Flow-Through/250@Pipelined MHz

Compliant

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8161Z18DGT-250I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

QFP

Industrial grade

表面贴装

2.7, 3.6 V

18 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

-40 to 85 °C

Bulk

3A991.B.2.B

85 °C

-40 °C

ALSO OPERATES AT 3.3V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS880E36CGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.61

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

0 to 70 °C

Tray

GS880E36CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

SRAM

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T09BGD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

405 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672Q19BE

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.21 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 70 C

2.7 V

0 C

18

0 to 70 °C

Bulk

GS8161E18DD

DCD Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

18 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

133 MHz

Compliant

有

133 MHz

+ 85 C

1.9 V

0.445040 oz

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.5 ns

85 °C

无

GS8182Q18BD-133I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

表面贴装

1.9 V

-40 to 85 °C

Tray

GS8182Q18BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

385 mA

Pipelined

1 M x 18

1.4 mm

18

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

350 MHz

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

Compliant

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

-40 to 100 °C

Bulk

GS8342T11BD

SigmaQuad-II+

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

575 mA

0.45

4 M x 9

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Bulk

GS8672T38BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.57 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

Compliant

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Bulk

85 °C

-40 °C

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 b

18 Mbit

Industrial

无

N/A

-

8 Weeks

BGA-119

YES

119

119

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.13

BGA

Compliant

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS88218CB-200

524288 words

2.5 V

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

70 °C

0 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

9 Mbit

2

SYNCHRONOUS

130 mA, 155 mA

6.5 ns

512 k x 18

1.77 mm

18

19 b

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

无