N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

400 MHz

72 Mbit

1.09 A

4 M x 18

72

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

375 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672D19BGE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.32 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

400 MHz

GS8672D36BGE

72 Mbit

1.88 A

2 M x 36

72

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q19BE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1.19 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

SigmaQuad-II+

QDR-II

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8672Q20BE

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

1.63 A

4 M x 18

SRAM

72

SRAM

N/A

-

TQFP-100

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS816118DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

195 mA

6.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

SigmaQuad-II+

DDR

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8182D19BD

SigmaQuad II+

Memory & Data Storage

18 Mbit

500 mA

1 M x 18

SRAM

SRAM

N/A

-

TQFP-100

Details

250 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

72

SyncBurst

3.6 V

Tray

GS84032CGT

Pipeline/Flow Through

4 Mbit

155 mA, 195 mA

5.5 ns

128 k x 32

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II

Details

DDR-II

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T18BGE

SigmaDDR-II

Memory & Data Storage

72 Mbit

910 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161E32DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

180 mA, 190 mA

7.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

250 MHz

72 Mbit

1 A

4 M x 18

72

N/A

-

BGA-119

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 85 C

SMD/SMT

SyncBurst

84

有

SDR

3.6 V

Tray

GS84036CGB

Pipeline/Flow Through

4 Mbit

160 mA, 190 mA

6.5 ns

128 k x 36

N/A

-

BGA-119

Details

250 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

Tray

GS82564Z18GB

NBT Pipeline/Flow Through

288 Mbit

450 mA, 540 mA

5.5 ns

16 M x 18

N/A

-

BGA-119

Details

250 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

Tray

GS82564Z36GB

NBT Pipeline/Flow Through

288 Mbit

490 mA, 590 mA

5.5 ns

8 M x 36

N/A

-

TQFP-100

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

200 MHz

4 Mbit

140 mA, 170 mA

6.5 ns

128 k x 36

N/A

-

BGA-165

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672Q20BGE

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

1.36 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

375 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8672T37BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.37 A

2 M x 36

SRAM

72

SRAM

N/A

-

8 Weeks

BGA-209

YES

209

209

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

133 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

-40 °C

未说明

8.5 ns

85 °C

有

GS832272GC-133I

133 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

FBGA

-40 to 85 °C

Tray

GS832272GC

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

8

SYNCHRONOUS

220 mA, 255 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

3-STATE

1.7 mm

72

SRAM

36 Mbit

0.08 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

4 Weeks

TQFP-100

YES

100

100

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

SDR

Details

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

18

0 C

2.7 V

+ 70 C

167 MHz

有

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS8640Z36GT-167V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

125@Flow-Through/167@Pipelined MHz

TQFP

SDR

0 to 70 °C

Tray

GS8640Z36GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

220 mA, 270 mA

8 ns

Flow-Through/Pipelined

2 M x 36

1.6 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

SigmaQuad-II+

QDR-II

有

375 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8672Q37BE

SigmaQuad-II+ ECCRAM

Memory & Data Storage

72 Mbit

2 M x 36

SRAM

72

SRAM

N/A

-

12 Weeks

BGA-260

YES

260

260

8

SigmaQuad-IIIe

500 MHz

BGA

QDR

1.3500 V

1.25 V

Synchronous

4 MWords

18 Bit

1.4 V

表面贴装

1.4 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

有

GS8673ED18BGK-500I

1.3 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Industrial grade

Details

500 MHz

Parallel

1.25 V

- 40 C

+ 100 C

SMD/SMT

DDR

有

-40 to 85 °C

Tray

GS8673ED18BGK

3A991.B.2.B

SigmaQuad-IIIe B4

IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

1

SYNCHRONOUS

1.77 A

1 Gb/s

Pipelined

4 M x 18

2.3 mm

18

20 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.25 V

22 mm

14 mm

N/A

-

TQFP-100

GSI技术

GSI技术

NBT SRAM

Details

SDR

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

Tray

GS8161E32DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

260 mA, 315 mA

4.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SyncBurst

Details

SDR

有

200 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

Tray

GS881E32CGD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

140 mA, 170 mA

6.5 ns

256 k x 32

SRAM

SRAM

N/A

-

BGA-165

SyncBurst

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS881E36CD

DCD Pipeline/Flow Through

Memory & Data Storage

9 Mbit

175 mA, 215 mA

5.5 ns

256 k x 36

SRAM

SRAM

N/A

-

BGA-165

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

Tray

GS81302T37E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

850 mA

4 M x 36

SRAM

SRAM