N/A

-

10 Weeks

BGA-165

YES

165

165

表面贴装

250 MHz

+ 85 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

无

GS816118DD-250V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

0 to 85 °C

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

205 mA, 225 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

1.4 mm

18

20 Bit

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Details

DDR

Commercial grade

350 MHz

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

0 to 85 °C

Tray

GS8342T20BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

565 mA

0.45

2 M x 18

SRAM

36

Commercial

SRAM

N/A

-

165

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

Commercial grade

0 to 85 °C

4

Flow-Through/Pipelined

20 Bit

36 Mbit

Commercial

N/A

-

BGA-119

119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

14

0 to 85 °C

Tray

GS8322Z36AB

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

260 mA, 345 mA

4.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 100 °C

Tray

GS8321E18AD

DCD Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

235 mA, 275 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

18

0 C

3.6 V

Commercial grade

表面贴装

2.7, 3.6 V

18 Bit

2 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

133.3@Flow-Through/150@Pipelined MHz

有

150 MHz

+ 70 C

SDR

Details

SyncBurst

0 to 85 °C

Tray

GS832118AGD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

12

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8162Z36DD-200V

BGA

5.25

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS8162Z36DD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342TT06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

610 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

0 C

1.9 V

Commercial grade

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

250 MHz

+ 70 C

DDR

Details

SigmaCIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

0 to 85 °C

Tray

GS8342T09BGD

SigmaDDR-II B2

Memory & Data Storage

36 Mbit

395 mA

0.45

4 M x 9

SRAM

36

Commercial

SRAM

N/A

-

TQFP-100

100

2.3 V

36

- 40 C

3.6 V

+ 85 C

有

Industrial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 85 °C

Tray

GS880F36CGT

流过

Memory & Data Storage

9 Mbit

4

185 mA

5 ns

Flow-Through

256 k x 36

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

SigmaSIO-II

Details

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 85 °C

Tray

GS8342S18BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

2

605 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

1.7 V

1.8000 V

QDR

FBGA

250 MHz

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

N

QDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672Q20BE-500

500 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Tray

GS8672Q20BE

3A991.B.2.B

SigmaQuad-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

COMMERCIAL

72 Mbit

SYNCHRONOUS

1.61 A

4 M x 18

3-STATE

1.4 mm

18

SRAM

75497472 bit

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS8161E32DGD-333V

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

0 to 70 °C

Tray

GS8161E32DGD

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

240 mA, 310 mA

5 ns

Flow-Through/Pipelined

512 k x 32

1.4 mm

32

19 Bit

SRAM

18 Mbit

16777216 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

表面贴装

1.9 V

18 Bit

2 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

350 MHz

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342R18BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

575 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

Industrial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

QDR

FBGA

333 MHz

有

333 MHz

+ 85 C

1.9 V

- 40 C

DDR

SigmaQuad-II+

-40 to 100 °C

Tray

GS8342DT07BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

615 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

133@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

-40 to 100 °C

Tray

GS8320E18AGT

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

36 Mbit

2

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

18

0 to 70 °C

Tray

GS8182Q09BD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

860 mA

Pipelined

2 M x 9

20 Bit

SRAM

18 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342Q18BGD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

785 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

GS8161Z18DGD

85 °C

0 °C

18 Mbit

2

190 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Commercial

无

N/A

-

BGA-165

165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

表面贴装

2.7, 3.6 V

18 Bit

有

250 MHz

+ 70 C

3.6 V

0 C

18

0 to 85 °C

Tray

GS8321E18AGD

DCD Pipeline/Flow Through

85 °C

0 °C

Memory & Data Storage

36 Mbit

2

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mb

Commercial

SRAM

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

18 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

QFP

5.26

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

1.8 V

1048576 words

GS8161Z18DGT-250IV

有

85 °C

5.5 ns

未说明

-40 °C

PLASTIC/EPOXY

1000000

FLATPACK, LOW PROFILE

LQFP,

181.8@Flow-Through/250@Pipelined MHz

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 100 °C

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

100 °C

-40 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

225 mA, 245 mA

5.5@Flow-Through/3@P

1 M x 18

1.6 mm

18

20 b

SRAM

18 Mb

18

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

有

375 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T37BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.37 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

725 mA

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

200 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Tray

GS8182S08BD

SigmaSIO DDR-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

18 Mbit

2

365 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无