N/A

-

8 Weeks

TQFP-100

YES

100

100

2, 2.7 V

表面贴装

Parallel

SMD/SMT

1.7 V

0 C

2.7 V

+ 70 C

250 MHz

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

85 °C

有

GS8320Z18AGT-250V

250 MHz

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

1.7

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

GS8320Z18AGT

3A991.B.2.B

ALSO OPERATES AT 2.5

SRAMs

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

OTHER

36 Mbit

2

SYNCHRONOUS

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.6 mm

18

21 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342R18BD

SigmaDDR-II B4

Memory & Data Storage

36 Mbit

1

525 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS8162Z36DB

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D18BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

0 to 85 °C

Tray

GS8320E36AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

230 mA, 285 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

0 to 85 °C

Tray

GS8342S36BD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

675 mA

0.45

1 M x 36

19 Bit

SRAM

36

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342D08BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

675 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D06BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

400 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8342D06BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

705 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

0.225 A

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q08BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

945 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

21

1.7 V

0 to 85 °C

Tray

GS816236DGB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

150 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

0 to 70 °C

Tray

GS8160E18DGT

DCD Synchronous Burst

Memory & Data Storage

18 Mbit

2

160 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T07BD-300I

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

300 MHz

FBGA

1.8000 V

Synchronous

8 Bit

有

-40 to 100 °C

Tray

GS8342T07BD

e0

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

SYNCHRONOUS

460 mA

0.45

4 M x 8

3-STATE

1.4 mm

8

SRAM

0.195 A

36

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8182Q09BGD-300I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

BGA

Industrial grade

300 MHz

FBGA

-40 to 85 °C

Tray

GS8182Q09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

810 mA

Pipelined

2 M x 9

1.4 mm

9

20 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

250 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

-40 to 100 °C

18 Mbit

2

225 mA, 245 mA

5.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

150 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

-40 to 100 °C

GS816136DGD

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

18 Mbit

Industrial

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

85 °C

有

GS8342DT07BGD-300

300 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

300 MHz

0 to 85 °C

Tray

GS8342DT07BGD

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn/Ag/Cu)

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

OTHER

36 Mbit

2

SYNCHRONOUS

530 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

-40 to 100 °C

Tray

GS8342T06BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

575 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8342T20BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

610 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS881Z36CGT

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

185 mA, 245 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342DT20BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

785 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

SDR

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8162Z36DGB-200I

524288 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.25

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

Tray

GS8162Z36DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA

6.5 ns

512 k x 36

1.99 mm

36

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

DDR

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

BGA

5.19

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

2097152 words

GS8182Q09BGD-250I

有

250 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Tray

GS8182Q09BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

605 mA

2 M x 9

1.4 mm

9

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

300 MHz

FBGA

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

DDR

SigmaQuad-II+

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342DT10BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

540 mA

0.45

4 M x 9

SRAM

36

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS88036CGT

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D08BGD

SigmaQuad-II

Memory & Data Storage

36 Mbit

2

665 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM