N/A

-

BGA-165

165

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

333 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

GS8342D18BD

85 °C

0 °C

1.8 V

36 Mbit

2

605 mA

Pipelined

2 M x 18

19 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

Bulk

GS8672D36BE

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.31 A

2 M x 36

19 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

36 Mbit

2

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Commercial

无

N/A

-

BGA-165

165

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

Compliant

有

150 MHz

+ 85 C

2.7 V

- 40 C

-40 to 85 °C

Bulk

GS8161E32DD

DCD Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

18 Mbit

4

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

GS8342R09BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

405 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Commercial grade

200@Flow-Through/300@Pipelined MHz

表面贴装

2.7, 3.6 V

18 Bit

512 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

Compliant

有

300 MHz

+ 70 C

3.6 V

0 C

0 to 70 °C

Tray

GS881Z18CD

NBT Pipeline/Flow Through

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

150 mA, 205 mA

5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

GS8342R09BD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

525 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

150 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

7.5 ns

85 °C

无

GS832218AB-150I

150 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

-40 to 100 °C

Bulk

GS832218AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

195 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

Compliant

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Bulk

GS8672T38BGE

100 °C

-40 °C

1.8 V

72 Mbit

1

1.45 A

2 M x 36

20 b

72 Mb

72

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

300 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

Tray

GS8182S18BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

485 mA

1 M x 18

19 b

SRAM

18 Mb

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS8161E32DD-200

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.31

BGA

Compliant

SDR

SyncBurst

GSI技术

GSI技术

SMD/SMT

2.3 V

36

0 C

3.6 V

+ 70 C

200 MHz

有

LBGA,

Bulk

GS8161E32DD

3A991.B.2.B

DCD Pipeline/Flow Through

70 °C

0 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

210 mA

6.5 ns

512 k x 32

1.4 mm

32

19 b

SRAM

18 Mb

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

Tray

GS8182S09BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

515 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

QDR-II

Compliant

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

Tray

GS8672Q36BE

SigmaQuad-II

85 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.88 A

2 M x 36

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

SigmaDDR-II+

DDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8672T38BE-500

500 MHz

2097152 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

Compliant

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Bulk

GS8672T38BE

3A991.B.2.B

SigmaDDR-II+ B2

85 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

1.7 A

2 M x 36

3-STATE

1.5 mm

36

20 b

SRAM

72 Mb

72

PARALLEL

COMMON

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5 ns

70 °C

有

GS816018DGT-333V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Commercial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

0 to 85 °C

Bulk

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

85 °C

0 °C

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

240 mA, 285 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

21 b

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

无

N/A

-

BGA-165

SMD/SMT

1.7 V

18

0 C

1.9 V

+ 70 C

Compliant

有

300 MHz

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

Tray

GS8182D19BGD

SigmaQuad II+

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

490 mA

1 M x 18

18 b

SRAM

18 Mb

SRAM

无

N/A

-

12 Weeks

BGA-165

YES

165

165

GSI技术

SigmaDDR-II+

DDR-II

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8672T20BE-500I

500 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

Obsolete

GSI TECHNOLOGY

5.92

BGA

Compliant

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

Bulk

GS8672T20BE

3A991.B.2.B

SigmaDDR-II+ B2

100 °C

-40 °C

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

1.27 A

4 M x 18

3-STATE

1.5 mm

18

21 b

SRAM

72 Mb

72

PARALLEL

COMMON

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

17 mm

15 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

Synchronous

1 MWords

36 Bit

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342TT37BGD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

350 MHz

FBGA

DDR

0 to 85 °C

Bulk

GS8342TT37BGD

3A991.B.2.B

SigmaDDR-II+ B2

85 °C

0 °C

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

725 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

Compliant

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

GS8672Q19BGE

85 °C

-40 °C

1.8 V

72 Mbit

2

1.51 A

4 M x 18

21 b

72 Mb

72

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

DDR

Compliant

有

250 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

Tray

GS8182S09BGD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

420 mA

2 M x 9

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

Bulk

GS8672T19BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

950 mA

4 M x 18

22 b

SRAM

72 Mb

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

Compliant

有

350 MHz

+ 70 C

1.9 V

0 C

0 to 70 °C

Tray

GS8342D07BD

SigmaQuad-II+ B4

70 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

12 Weeks

BGA-165

Compliant

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

有

GS8672Q19BGE-450

Obsolete

GSI TECHNOLOGY

5.84

Tray

GS8672Q19BGE

3A991.B.2.B

SigmaQuad-II+

70 °C

0 °C

Memory & Data Storage

1.8 V

compliant

72 Mbit

2

1.49 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Compliant

有

633 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

Bulk

GS8672D20BE

SigmaQuad-II+ B4

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.95 A

4 M x 18

20 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Industrial grade

250 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

-40 to 100 °C

Bulk

GS8342R18BGD

SigmaDDR-II B4

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

1

405 mA

Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

无