N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

N

DDR-II

有

200 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T36BE

SigmaDDR-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

900 mA

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR-II

Compliant

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672T36BE

SigmaDDR-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.06 A

2 M x 36

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

Compliant

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182S18BD-333I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.19

BGA

有

333 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Tray

GS8182S18BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

85 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

525 mA

1 M x 18

1.4 mm

18

19 b

SRAM

18 Mb

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

表面贴装

1.9 V

9 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

400 MHz

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342TT11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

200 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS880F32CGT

流过

Memory & Data Storage

9 Mbit

4

165 mA

5 ns

Flow-Through

256 k x 32

18 Bit

SRAM

8 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342D20BGD-350

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

350 MHz

FBGA

QDR

0 to 85 °C

Tray

GS8342D20BGD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.22 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

8 Bit

1.9 V

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342S08BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

0 to 85 °C

GS8342S08BD

3A991.B.2.B

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

705 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

36 Mbit

0.225 A

33554432 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

10 Weeks

YES

165

165

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342R09BD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.36

BGA

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

Compliant

LBGA, BGA165,11X15,40

0 to 85 °C

Bulk

e0

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

1

SYNCHRONOUS

0.6 mA

Pipelined

4MX9

3-STATE

1.4 mm

9

20 Bit

36 Mbit

0.215 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342S08BGD-300I

300 MHz

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

300 MHz

FBGA

-40 to 100 °C

Tray

GS8342S08BGD

3A991.B.2.B

SigmaSIO DDR-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

540 mA

0.45

4 M x 8

3-STATE

1.4 mm

8

21 b

SRAM

36 Mb

0.21 A

36

Industrial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

250 MHz

FBGA

1.8000 V

1.7 V

8 Bit

1.9 V

有

250 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

0 to 85 °C

Tray

GS8342Q07BD

SigmaQuad-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

665 mA

0.45

4 M x 8

21 b

SRAM

36 Mb

36

SRAM

无

N/A

-

Compliant

Bulk

100 °C

-40 °C

1.8 V

2

20 b

72 Mb

72

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342T19BD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

565 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

DDR

SigmaSIO DDR-II

GSI技术

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Tray

GS8182S08BD

SigmaSIO DDR-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

515 mA

2 M x 8

20 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8342TT11BGD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

600 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

SDR

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

无

GS816118DD-200

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

Tray

GS816118DD

3A991.B.2.B

Pipeline/Flow Through

70 °C

0 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

195 mA

6.5 ns

1 M x 18

1.4 mm

18

20 b

SRAM

18 Mb

18874368 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

BGA-165

YES

165

165

1.8000 V

QDR

FBGA

350 MHz

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

0.45 ns

70 °C

无

GS8342D20BD-350

350 MHz

BGA

5.21

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

1.8 V

Commercial grade

表面贴装

18 Bit

2 MWords

Synchronous

0 to 85 °C

Tray

GS8342D20BD

3A991.B.2.B

SigmaQuad-II+

85 °C

0 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

665 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.22 A

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

8 Weeks

BGA-119

YES

119

119

表面贴装

2.7, 3.6 V

18 Bit

2 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

SDR

FBGA

153.8@Flow-Through/200@Pipelined MHz

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

-40 °C

未说明

6.5 ns

85 °C

无

GS832218AB-200I

200 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.11

BGA

Industrial grade

-40 to 100 °C

Tray

GS832218AB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

100 °C

-40 °C

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

-40 to 100 °C

Tray

GS8342D18BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

540 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672D37BE

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

1.6 A

2 M x 36

19 b

SRAM

72 Mb

72

SRAM

无

N/A

-

165

FBGA

1.8000 V

1.7 V

Synchronous

18 Bit

1.9 V

Compliant

Commercial grade

0 to 85 °C

Bulk

85 °C

0 °C

1.8 V

2

0.45

19 Bit

36 Mb

36

Commercial

无

N/A

-

BGA-165

Compliant

167 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

85 °C

-40 °C

1.8 V

18 Mbit

2

325 mA

1 M x 18

18 b

18 Mb

无

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Tray

GS8672T20BE

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

1.36 A

4 M x 18

21 b

SRAM

72 Mb

72

SRAM

无

N/A

-

BGA-165

165

200@Flow-Through/333@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

32 Bit

2, 2.7 V

有

333 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

0 to 85 °C

Tray

GS816132DGD

同步突发

85 °C

0 °C

Memory & Data Storage

18 Mbit

4

240 mA, 310 mA

5@Flow-Through/3@Pip

512 k x 32

19 Bit

SRAM

18 Mb

18

SRAM

无

N/A

-

BGA-165

18

0 C

1.9 V

+ 70 C

300 MHz

有

DDR

Details

SigmaQuad-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

Tray

GS8182D36BGD

SigmaQuad-II

70 °C

0 °C

Memory & Data Storage

1.8 V

18 Mbit

2

595 mA

512 k x 36

17 b

SRAM

18 Mb

SRAM

无

N/A

-

BGA-119

119

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

21

-40 to 100 °C

Tray

GS816218DB

Pipeline/Flow Through

100 °C

-40 °C

Memory & Data Storage

18 Mbit

2

180 mA, 200 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

无