N/A

-

8 Weeks

BGA-165

YES

100

100

150 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS881Z32CGD-150

262144 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

QFP

GS881Z32CGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256KX32

1.6 mm

32

8388608 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302TT37E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.2 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

12 Weeks

BGA-209

YES

209

209

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

BGA

4.79

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

2.5 V

200 MHz

GS8642Z72C-200I

无

85 °C

7.5 ns

未说明

-40 °C

BGA209,11X19,40

PLASTIC/EPOXY

1000000

3

GRID ARRAY, LOW PROFILE

LBGA, BGA209,11X19,40

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

-40 to 85 °C

Tray

GS8642Z72C

无

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

INDUSTRIAL

72 Mbit

8

SYNCHRONOUS

295 mA, 405 mA

7.5 ns

Flow-Through/Pipelined

1 M x 72

3-STATE

1.7 mm

72

20 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

SigmaDDR-II+

N

DDR-II

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

9 Bit

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS81302T11E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

895 mA

Pipelined

16 M x 9

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

- 55 C

1.7 V

SMD/SMT

SigmaCIO DDR-II

DDR-II

Military grade

450 MHz

DDR

450 MHz

15

Parallel

GSI技术

GSI技术

FBGA

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

+ 125 C

1.9 V

-55 to 125 °C

Tray

GS8662T38BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

表面贴装

200 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

BGA,

网格排列

8000000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS8128418B-200I

2.5 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

Industrial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

-40 to 85 °C

GS8128418B

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

360 mA, 435 mA

7.5 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302T37E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.19 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS81302TT37E-450

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

0 to 85 °C

Tray

GS81302TT37E

无

3A991.B.2.B

SigmaDDR-II+ B2

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

1

SYNCHRONOUS

1.19 A

Pipelined

4 M x 36

1.5 mm

36

21 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR-II

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS81302T37GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.005 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

144 Mbit

1

810 mA

Pipelined

16 M x 9

23 Bit

144 Mb

Industrial

N/A

-

12 Weeks

BGA-260

YES

260

260

4 MWords

18 Bit

1.4 V

表面贴装

有

625 MHz

+ 100 C

1.4 V

- 40 C

8

1.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

Details

QDR-III

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

未说明

0.4 ns

有

GS8673EQ18BGK-625I

1.35 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.72

Industrial grade

625/400 MHz

BGA

QDR

1.3500 V

1.3 V

Synchronous

-40 to 85 °C

Tray

GS8673EQ18BGK

3A991.B.2.B

SigmaQuad-IIIe B2

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

72 Mbit

SYNCHRONOUS

2.11 A

Pipelined

4 M x 18

2.3 mm

18

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.4 V

1.3 V

SRAM

22 mm

14 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

400 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

400 MHz

FBGA

QDR

-40 to 100 °C

GS8662DT06BD

72 Mbit

2

745 mA

Pipelined

8 M x 8

21 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 100 °C

Tray

GS816218DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

260 mA, 305 mA

4.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

表面贴装

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

0 to 85 °C

GS8662DT11BGD

72 Mbit

2

890 mA

Pipelined

8 M x 9

21 Bit

72 Mb

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

36 Bit

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q36BGD-357

357 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

BGA

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

0 to 85 °C

Tray

GS8662Q36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

1.195 A

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

42

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS882Z36CB

NBT

Memory & Data Storage

9 Mbit

4

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Military grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

-55 to 125 °C

Tray

GS8662TT11BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

0 to 70 °C

Tray

GS81284Z18GB

NBT Pipeline/Flow Through

Memory & Data Storage

144 Mbit

2

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

1.9 V

表面贴装

500 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8342T20BD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

BGA

Commercial grade

500 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

0 to 85 °C

GS8342T20BD

e0

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

730 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

36 Mbit

0.24 A

37748736 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302DT19E-350I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

350 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS81302DT19E

无

3A991.B.2.B

SigmaQuad-II+ B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

950 mA

Pipelined

8 M x 18

1.5 mm

18

21 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302T10E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

4 MWords

18 Bit

2, 2.7 V

表面贴装

133 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

72 Mbit

2

235 mA, 285 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

72 Mbit

Industrial

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

357 MHz

有

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8662Q19BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

995 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

Details

SyncBurst

Industrial grade

表面贴装

2, 2.7 V

18 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

TQFP

200@Flow-Through/333@Pipelined MHz

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

-40 to 85 °C

Tray

GS8161E18DGT

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

240 mA, 300 mA

5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

36 Bit

2, 2.7 V

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

7.5 ns

85 °C

有

GS880E36CGT-150IV

262144 words

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.38

QFP

Industrial grade

TQFP

1.8, 2.5 V

1.7, 2.3 V

Synchronous

-40 to 85 °C

Tray

GS880E36CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

INDUSTRIAL

9 Mbit

SYNCHRONOUS

130 mA, 145 mA

7.5@Flow-Through/3.8

256 k x 36

3-STATE

1.6 mm

36

SRAM

0.045 A

9

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm