GSI的存储器_正品采购_价格信息

品牌是'GSI' (10000)

产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS81302TT38E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	LBGA,	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	无	GS81302TT38E-450I	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.06	BGA	Industrial grade	450 MHz	FBGA	DDR	1.8000 V	-40 to 100 °C	Tray	GS81302TT38E		无	3A991.B.2.B	SigmaDDR-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	144 Mbit	1	SYNCHRONOUS	1.2 A		Pipelined	4 M x 36		1.5 mm	36	21 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		DDR SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8662T19BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	15	- 40 C	1.9 V	+ 85 C	300 MHz	有	Industrial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	18 Bit	1.9 V	表面贴装	DDR	Details	SigmaDDR-II+	GSI技术	GSI技术	Parallel	SMD/SMT	-40 to 100 °C	Tray	GS8662T19BGD				SigmaDDR-II+ B2				Memory & Data Storage												72 Mbit	1		505 mA		Pipelined	4 M x 18				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS816272CGC-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-209	209	2.3 V	21	- 40 C	3.6 V	+ 85 C	333 MHz	有	Industrial grade				222.2@Flow-Through/333@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	256 kWords	72 Bit	2.7, 3.6 V	表面贴装	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	-40 to 85 °C	Tray	GS816272CGC				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	8		330 mA, 400 mA	4.5 ns	Flow-Through/Pipelined	256 k x 72				18 Bit	SRAM	18 Mbit			Industrial							SRAM
GS81302DT07E-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	10	0 C	1.9 V	+ 70 C	300 MHz	有	Commercial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	16 MWords	8 Bit	1.9 V	表面贴装	QDR-II	N	SigmaQuad-II+	GSI技术	GSI技术	Parallel	SMD/SMT	0 to 85 °C	Tray	GS81302DT07E				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		815 mA		Pipelined	16 M x 8				22 Bit	SRAM	144 Mbit			Commercial							SRAM
GS8342TT07BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342TT07BD				SigmaDDR-II+ B2				Memory & Data Storage												36 Mbit	1		610 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8644Z36E-133IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	1.7, 2.3 V	Synchronous	2 MWords	36 Bit	2, 2.7 V	表面贴装	有	133 MHz	2.7 V	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	8.5 ns	85 °C	有	GS8644Z36E-133IV	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.29	BGA	Industrial grade	117.6@Flow-Through/133@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	-40 to 85 °C	Tray	GS8644Z36E	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	255 mA, 305 mA	8.5 ns	Flow-Through/Pipelined	2 M x 36		1.5 mm	36	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		ZBT SRAM		2 V	1.7 V	SRAM	17 mm	15 mm
GS8160E36DGT-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				222.2@Flow-Through/333@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	36 Bit	2.7, 3.6 V	表面贴装	有	333 MHz	+ 100 C	3.6 V	- 40 C	36	2.3 V	-40 to 100 °C	Tray	GS8160E36DGT				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		280 mA, 335 mA	4.5 ns	Flow-Through/Pipelined	512 k x 36				20 Bit	SRAM	18 Mbit			Industrial							SRAM
GS8662R09BD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II	N	DDR	Commercial grade				300 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8662R09BD				SigmaDDR-II B4				Memory & Data Storage												72 Mbit	1		495 mA		Pipelined	8 M x 9				21 Bit	SRAM	72 Mbit			Commercial							SRAM
GS81302D37E-450	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	QDR-II	Commercial grade				450 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	36 Bit	1.9 V	表面贴装	有	450 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302D37E				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		1.4 A		Pipelined	4 M x 36				20 Bit	SRAM	144 Mbit			Commercial							SRAM
GS81302TT10GE-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR-II	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	9 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	-40 to 100 °C	Tray	GS81302TT10GE				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		905 mA		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Industrial							SRAM
GS8321E18AD-333IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				200@Flow-Through/333@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	18 Bit	2, 2.7 V	表面贴装	有	333 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8321E18AD				同步突发				Memory & Data Storage												36 Mbit	2		265 mA, 350 mA	5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS81302TT11GE-500I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	16 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	500 MHz	500 MHz	+ 85 C	1.9 V	- 40 C	1.7 V	SMD/SMT	Parallel	Industrial grade				表面贴装	1.9 V	9 Bit	-40 to 100 °C		GS81302TT11GE																				144 Mbit	1		1.08 A		Pipelined	16 M x 9				23 Bit		144 Mbit			Industrial
GS816118DGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Commercial grade				250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	36	2.3 V	0 to 70 °C	Tray	GS816118DGD				Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Commercial							SRAM
GS8321E36AD-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SyncBurst	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8321E36AD				同步突发				Memory & Data Storage												36 Mbit	4		260 mA, 315 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36				20 Bit	SRAM	36 Mbit			Industrial							SRAM
GS832218AGD-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.7 V	18	- 40 C	2.7 V	+ 85 C	200 MHz	有	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	2 MWords	18 Bit	2, 2.7 V	表面贴装	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	-40 to 100 °C	Tray	GS832218AGD				Pipeline/Flow Through				Memory & Data Storage												36 Mbit	2		215 mA, 250 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18				21 Bit	SRAM	36 Mbit			Industrial							SRAM
GS8322Z36AGD-375I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	Synchronous	36 Bit	2.7, 3.6 V	有	375 MHz	+ 85 C	3.6 V	- 40 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	4.2 ns	85 °C	有	GS8322Z36AGD-375I	375 MHz	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Industrial grade	238@Flow-Through/375@Pipelined MHz	2.5, 3.3 V	2.3, 3 V	-40 to 100 °C	Tray	GS8322Z36AGD	e1	有	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Silver/Copper (Sn/Ag/Cu)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	INDUSTRIAL	36 Mbit		SYNCHRONOUS	290 mA, 400 mA	4.2@Flow-Through/2.5		1 M x 36	3-STATE	1.4 mm	36		SRAM		0.04 A	36	Industrial	PARALLEL	COMMON	ZBT SRAM	2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8644Z36GE-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	Industrial grade				153.8@Flow-Through/200@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	200 MHz	+ 85 C	3.6 V	- 40 C	15	2.3 V	-40 to 85 °C	Tray	GS8644Z36GE				NBT				Memory & Data Storage												72 Mbit	4		295 mA, 380 mA	6.5 ns	Flow-Through/Pipelined	2 M x 36				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8662D10BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Industrial grade				300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	9 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	-40 to 100 °C	Tray	GS8662D10BGD				SigmaQuad-II+ B4				Memory & Data Storage												72 Mbit	2		590 mA		Pipelined	8 M x 9				21 Bit	SRAM	72 Mbit			Industrial							SRAM
GS8182T08BGD-300	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	165	表面贴装	1.9 V	8 Bit	2 MWords	Synchronous	1.7 V	1.8000 V	DDR	FBGA	300 MHz	Commercial grade					0 to 70 °C																							1				Pipelined					20 Bit		18 Mbit			Commercial
GS864036GT-167I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	9 Weeks, 4 Days	TQFP-100	YES	100	100	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	2 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	167 MHz	+ 85 C	SDR	Details	SyncBurst	GSI技术	GSI技术	Parallel	SMD/SMT	2.3 V	18	- 40 C	3.6 V	LQFP,	FLATPACK, LOW PROFILE	3	2000000	PLASTIC/EPOXY	-40 °C	未说明	8 ns	85 °C	有	GS864036GT-167I	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	1.76	QFP	Industrial grade	125@Flow-Through/167@Pipelined MHz	TQFP	-40 to 85 °C	Tray	GS864036GT	e3	有	3A991.B.2.B	Pipeline/Flow Through	纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格		INDUSTRIAL	72 Mbit	4	SYNCHRONOUS	240 mA, 290 mA	8 ns	Flow-Through/Pipelined	2 M x 36		1.6 mm	36	21 Bit	SRAM	72 Mbit		75497472 bit	Industrial	PARALLEL		缓存SRAM		2.7 V	2.3 V	SRAM	20 mm	14 mm
GS81302D10E-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	QDR-II	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	表面贴装	1.9 V	9 Bit	16 MWords	Synchronous	1.7 V	有	350 MHz	+ 70 C	1.9 V	0 C	10	1.7 V	0 to 85 °C	Tray	GS81302D10E				SigmaQuad-II+ B4				Memory & Data Storage												144 Mbit	2		940 mA		Pipelined	16 M x 9				22 Bit	SRAM	144 Mbit			Commercial							SRAM
GS81302T10E-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR-II	Industrial grade				450 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	16 MWords	表面贴装	1.9 V	9 Bit	有	450 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS81302T10E				SigmaDDR-II+ B2				Memory & Data Storage												144 Mbit	1		1.01 A		Pipelined	16 M x 9				23 Bit	SRAM	144 Mbit			Industrial							SRAM
GS81302Q19GE-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	8 MWords	18 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	10	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	QDR-II	LBGA,	GRID ARRAY, LOW PROFILE	3	8000000	PLASTIC/EPOXY	-40 °C	未说明	0.45 ns	85 °C	有	GS81302Q19GE-300I	1.8 V	LBGA	RECTANGULAR	不推荐	GSI TECHNOLOGY	5.33	BGA	Industrial grade	300 MHz	FBGA	-40 to 100 °C	Tray	GS81302Q19GE	e1	有	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		INDUSTRIAL	144 Mbit	2	SYNCHRONOUS	1.26 A		Pipelined	8 M x 18		1.5 mm	18	22 Bit	SRAM	144 Mbit		150994944 bit	Industrial	PARALLEL		QDR SRAM		1.9 V	1.7 V	SRAM	17 mm	15 mm
GS8342QT07BGD-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	300 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	300 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	3	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	有	GS8342QT07BGD-300I	300 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Industrial grade	-40 to 100 °C	Tray	GS8342QT07BGD	e1	有	3A991.B.2.B	SigmaQuad-II+ B2	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	785 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	21 Bit	SRAM	36 Mbit		33554432 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8182D08BGD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details	DDR	Industrial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8182D08BGD				SigmaQuad-II				Memory & Data Storage												18 Mbit	2		730 mA		Pipelined	2 M x 8				19 Bit	SRAM	18 Mbit			Industrial							SRAM